STP160N4LF6

STP160N4LF6 N-channel 40 V, 0.0021 mΩ typ., 120 A, STripFET™ VI DeepGATE™ Power MOSFET in a TO-220 package Datasheet - production data Features TAB Order code VDS RDS(on) max STP160N4LF6 40 V 0.0029 Ω ID PTOT 120 A 150 W • RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on) • Logic level drive 3 1 2 • High avalanche ruggedness • 100% avalanche tested TO-220 Applications Figure 1. Internal schematic diagram • Switching applications Description 'Ć7$% This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. * 6 $0Y Table 1. Device summary Order code Marking Package Packaging STP160N4LF6 160N4LF6 TO-220 Tube April 2014 This is information on a product in full production. DocID026266 Rev 1 1/14 www.st.com Contents STP160N4LF6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 .............................................. 8 DocID026266 Rev 1 STP160N4LF6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25 °C 120 A ID Drain current (continuous) at TC = 100 °C 100 A Drain current (pulsed) 480 A Total dissipation at TC = 25 °C 150 W Derating factor 1 W/°C IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tjmax) 60 A EAS Single pulse avalanche energy 323 mJ Tstg Storage temperature -55 to 175 °C Value Unit Thermal resistance junction-case max 1.0 °C/W Thermal resistance junction-ambient max 62.5 °C/W IDM (1) PTOT Tj Operating junction temperature 1. Pulse width is limited by safe operating area Table 3. Thermal resistance Symbol Rthj-case Rthj-a Parameter DocID026266 Rev 1 3/14 14 Electrical characteristics 2 STP160N4LF6 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage (VGS= 0) ID = 250 μA IDSS Zero gate voltage drain current (VGS = 0) VDS = 20 V VDS = 20 V, Tc = 125 °C IGSS Gate body leakage current (VDS = 0) VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA Static drain-source onresistance VGS = 10 V, ID = 60 A 0.0022 0.0029 Ω RDS(on) VGS = 5 V, ID = 60 A 0.0024 0.0031 Ω V(BR)DSS 40 V 1 10 μA μA ±100 nA 1 V Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 20 V, f=1 MHz, VGS = 0 V VDD = 20 V, ID = 60 A VGS = 10 V (see Figure 14) Min Typ. Max. Unit - 8130 - pF - 770 - pF - 670 - pF - 181 - nC - 22 - nC - 46 - nC Min. Typ. Max. Unit - 20 - ns - 131 - ns - 205 - ns - 116 Table 6. Switching on/off (inductive load) Symbol td(on) tr td(off) tf 4/14 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD = 20 V, ID = 60 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15) Fall time DocID026266 Rev 1 ns STP160N4LF6 Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 120 A ISDM(1) Source-drain current (pulsed) - 480 A VSD(2) Forward on voltage ISD = 120 A, VGS = 0 - 0.97 V trr Reverse recovery time - 57 ns Qrr Reverse recovery charge - 53 nC IRRM Reverse recovery current ISD = 120 A, di/dt = 100 A/μs, VDD = 32 V (see Figure 17) - 1.86 A ISD 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% DocID026266 Rev 1 5/14 14 Electrical characteristics 2.1 STP160N4LF6 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM15806v1 ID (A) Tj=175°C Tc=25°C Single pulse is e a n) ar i s DS(o th in ax R ion y m at er d b Op ite Lim 100 100 µs 1ms 10 10ms 1 0.1 0.1 10 1 VDS(V) Figure 4. Output characteristics Figure 5. Transfer characteristics AM15797v1 ID (A) VGS= 6, 7, 8, 9, 10 V VGS= 5 V AM15798v1 ID (A) VDS= 0.6V 250 250 VGS= 4 V 200 200 150 150 100 100 50 50 VGS= 3 V 0 0 0.2 0.4 0.6 Figure 6. Gate charge vs gate-source voltage AM15799v1 VGS (V) VDD=20V ID=60V 12 0 0 0.8 VDS(V) 4 2 6 8 VGS(V) Figure 7. Static drain-source on-resistance AM15800v2 RDS(on) (mΩ) VGS=10V 2.2 10 2.1 8 2.0 6 1.9 4 1.8 2 0 0 6/14 50 100 150 200 Qg(nC) 1.7 10 DocID026266 Rev 1 20 30 40 50 60 70 ID(A) STP160N4LF6 Electrical characteristics Figure 8. Capacitance variations Figure 9. Normalized V(BR)DSS vs temperature AM15801v1 C (pF) AM15802v1 V(BR)DSS (norm) 1.1 ID=250 µA 1.08 1.06 10000 Ciss 1.04 1.02 1 1000 Coss Crss 0.98 0.96 0.94 100 0 8 24 16 32 VDS(V) Figure 10. Normalized gate threshold voltage vs temperature AM15803v1 VGS(th) (norm) 0.92 -75 -25 25 75 125 TJ(°C) Figure 11. Normalized on-resistance vs temperature AM15804v1 RDS(on) (norm) 1.2 2 ID=250 µA 1 VGS=10V 1.5 0.8 0.6 1 0.4 0.5 0.2 0 -75 -25 25 75 125 TJ(°C) 0 -75 -50 -25 0 25 50 75 100 125 150 TJ(°C) Figure 12. Source-drain diode forward characteristics AM15805v1 VSD (V) TJ=-55°C 0.9 TJ=25°C 0.85 0.8 0.75 0.7 TJ=150°C 0.65 0.6 0.55 0.5 0 20 40 60 80 ISD(A) DocID026266 Rev 1 7/14 14 Test circuits 3 STP160N4LF6 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 16. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/14 0 DocID026266 Rev 1 10% AM01473v1 STP160N4LF6 Test circuits Figure 19. Gate charge waveform Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd DocID026266 Rev 1 9/14 14 Package mechanical data 4 STP160N4LF6 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/14 DocID026266 Rev 1 STP160N4LF6 Package mechanical data Figure 20. TO-220 type A drawing BW\SH$B5HYB7 DocID026266 Rev 1 11/14 14 Package mechanical data STP160N4LF6 Table 8. TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 12/14 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DocID026266 Rev 1 STP160N4LF6 5 Revision history Revision history Table 9. Document revision history Date Revision 24-Apr-2014 1 Changes First release. DocID026266 Rev 1 13/14 14 STP160N4LF6 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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