STP160N3LL

STP160N3LL N-channel 30 V, 2.5 mΩ typ., 120 A STripFET™ H6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STP160N3LL 30 V 3.2 mΩ 120 A 136 W • • • • Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications • Figure 1: Internal schematic diagram Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Table 1: Device summary Order code Marking Package Packing STP160N3LL 160N3LL TO-220 Tube June 2015 DocID025073 Rev 3 This is information on a product in full production. 1/13 www.st.com Contents STP160N3LL Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 5 2/13 TO-220 type A package information................................................ 10 Revision history ............................................................................ 12 DocID025073 Rev 3 STP160N3LL 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 30 V VGS Gate-source voltage ±20 V Drain current (continuous) at Tcase = 25 °C 120 Drain current (continuous) at Tcase = 100 °C 112 IDM Drain current (pulsed) 480 PTOT Total dissipation at Tcase = 25 °C 136 W (3) EAS Single pulse avalanche energy 150 mJ –55 to 175 °C Value Unit (1) ID ID (2) Tstg Tj Storage temperature Operating junction temperature A Notes: (1) (2) (3) Current is limited by package. Pulse width is limited by safe operating area. starting Tj = 25 °C, ID = 40 A Table 3: Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case 1.1 Rthj-amb Thermal resistance junction-ambient 62.5 DocID025073 Rev 3 °C/W 3/13 Electrical characteristics 2 STP160N3LL Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4: Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 250 µA IDSS Zero gate voltage drain current IGSS Gate-body leakage current VGS(th) RDS(on) Min. Typ. Max. 30 Unit V VGS = 0 V, VDS = 30 V 1 VGS = 0 V, VDS = 30 V, Tcase = 125 °C 10 VDS = 0 V, VGS = ±20 V ±100 nA 2.5 V 1 µA Gate threshold voltage VDS = VGS, ID = 250 µA Static drain-source onresistance VGS = 10 V, ID = 60 A 2.5 3.2 VGS = 4.5 V, ID = 60 A 3.2 4.2 Min. Typ. Max. - 3500 - - 400 - - 380 - - 42 - - 9 - - 18 - - 1 - Ω Min. Typ. Max. Unit - 19 - mΩ Table 5: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge RG Intrinsic gate resistance Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 V VDD = 15 V, ID = 120 A, VGS = 4.5 V (see Figure 14: "Gate charge test circuit") f = 1 MHz, ID = 0 A, gate DC bias = 0 V, magnitude of alternative signal = 20 mV Unit pF nC Table 6: Switching times Symbol td(on) tr td(off) tf 4/13 Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 15 V, ID = 60 A RG = 4.7 Ω, VGS = 5 V (see Figure 13: "Switching times test circuit for resistive load" and Figure 18: "Switching time waveform") DocID025073 Rev 3 - 91 - - 24.5 - - 23.4 - ns STP160N3LL Electrical characteristics Table 7: Source-drain diode Symbol (1) VSD trr Parameter Test conditions Forward on voltage VGS = 0 V, ISD = 60 A Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 120 A, di/dt = 100 A/µs, VDD = 24 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") Min. Typ. - Max. Unit 1.1 V - 28.6 ns - 22.8 nC - 1.6 A Notes: (1) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DocID025073 Rev 3 5/13 Electrical characteristics 2.1 6/13 STP160N3LL Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance DocID025073 Rev 3 STP160N3LL Electrical characteristics Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Source-drain diode forward characteristics DocID025073 Rev 3 7/13 Test circuits 3 STP160N3LL Test circuits Figure 13: Switching times test circuit for resistive load Figure 14: Gate charge test circuit Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform 8/13 DocID025073 Rev 3 STP160N3LL 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ® ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK is an ST trademark. DocID025073 Rev 3 9/13 Package information 4.1 STP160N3LL TO-220 type A package information Figure 19: TO-220 type A package outline 10/13 DocID025073 Rev 3 STP160N3LL Package information Table 8: TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID025073 Rev 3 11/13 Revision history 5 STP160N3LL Revision history Table 9: Document revision history Date Revision 31-Jul-2013 1 First release. 2 Text edits and formatting changes throughout document In section 2 Electrical characteristics: - updated Table 4 Static - updated Table 5 Dynamic - updated Table 7 Source-drain diode - added Section 2.1 Electrical charateristics (curves) Updated and renamed Section 4 Package information (was Package mechanical data) 3 On cover page: - updated Title and Description In Section Electrical ratings: - updated Table Absolute maximum ratings 04-Jun-2015 26-Jun-2015 12/13 Changes DocID025073 Rev 3 STP160N3LL IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved DocID025073 Rev 3 13/13