STP200N3LL

STP200N3LL N-channel 30 V, 2.15 mΩ typ., 120 A Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STP200N3LL 30 V 2.4 mΩ 120 A 176.5 W     Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Figure 1: Internal schematic diagram  Switching applications Description D(2, TAB) This device is an N-channel Power MOSFET with very low RDS(on) in all packages. G(1) S(3) AM01475v1_Tab Table 1: Device summary Order code Marking Package Packing STP200N3LL 200N3LL TO-220 Tube July 2016 DocID028758 Rev 2 This is information on a product in full production. 1/13 www.st.com Contents STP200N3LL Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 5 2/13 TO-220 type A package information................................................ 10 Revision history ............................................................................ 12 DocID028758 Rev 2 STP200N3LL 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value VDS Drain-source voltage 30 VGS Gate-source voltage ±20 ID Drain current (continuous) at Tcase = 25 °C (silicon limited) 200 ID(1) Drain current (continuous) at Tcase = 25 °C 120 ID Drain current (continuous) at Tcase = 100 °C 120 IDM(2) Drain current (pulsed) 480 PTOT Total dissipation at Tcase = 25 °C EAS(3) Single pulse avalanche energy Tstg Tj Storage temperature range Operating junction temperature range Unit V A 176.5 W 300 mJ –55 to 175 °C Notes: (1) Current is limited by package. (2) Pulse width is limited by safe operating area. (3) starting Tj = 25 °C, ID = 68 A Table 3: Thermal data Symbol Parameter Value Rthj-case Thermal resistance junction-case 0.85 Rthj-amb Thermal resistance junction-ambient 62.5 DocID028758 Rev 2 Unit °C/W 3/13 Electrical characteristics 2 STP200N3LL Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4: Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. Max. 30 Unit V VGS = 0 V, VDS = 30 V 1 VGS = 0 V, VDS = 30 V, Tcase = 125 °C(1) 10 Gate-body leakage current VDS = 0 V, VGS = ±20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2.5 V RDS(on) Static drain-source onresistance VGS = 10 V, ID = 60 A 2.15 2.4 VGS = 4.5 V, ID = 60 A 2.5 3.1 Min. Typ. Max. - 5200 - - 640 - - 510 - - 53 - - 13 - - 27 - - 1.1 - Ω Min. Typ. Max. Unit - 18 - - 183 - - 90 - - 108 - IDSS Zero gate voltage drain current IGSS 1 µA mΩ Notes: (1)Defined by design, not subject to production test. Table 5: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge RG Intrinsic gate resistance Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 V VDD = 15 V, ID = 120 A, VGS = 4.5 V (see Figure 14: "Test circuit for gate charge behavior") f = 1 MHz, ID = 0 A, gate DC bias = 0 V, magnitude of alternative signal = 20 mV Unit pF nC Table 6: Switching times Symbol td(on) tr td(off) tf 4/13 Parameter Turn-on delay time Rise time Turn-off delay time Test conditions VDD = 15 V, ID = 60 A RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Test circuit for resistive load switching times" and Figure 18: "Switching time waveform") Fall time DocID028758 Rev 2 ns STP200N3LL Electrical characteristics Table 7: Source-drain diode Symbol VSD(1) trr Parameter Forward on voltage Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Test conditions VGS = 0 V, ISD = 60 A ISD = 120 A, di/dt = 100 A/µs, VDD = 24 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") Min. Typ. - Max. Unit 1.1 V - 35 ns - 34 nC - 2 A Notes: (1) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DocID028758 Rev 2 5/13 Electrical characteristics 2.1 STP200N3LL Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on resistance 6/13 DocID028758 Rev 2 STP200N3LL Electrical characteristics Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Source-drain diode forward characteristics DocID028758 Rev 2 7/13 Test circuits 3 STP200N3LL Test circuits Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform 8/13 DocID028758 Rev 2 Figure 18: Switching time waveform STP200N3LL 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID028758 Rev 2 9/13 Package information 4.1 STP200N3LL TO-220 type A package information Figure 19: TO-220 type A package outline 10/13 DocID028758 Rev 2 STP200N3LL Package information Table 8: TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID028758 Rev 2 11/13 Revision history 5 STP200N3LL Revision history Table 9: Document revision history Date Revision 14-Dec-2015 1 First release. 2 Document status promoted from preliminary to production data. Updated Section 2: "Electrical ratings" and Section 3: "Electrical characteristics". Added Section 3.1: "Electrical characteristics (curves)". Minor text changes. 27-Jul-2016 12/13 Changes DocID028758 Rev 2 STP200N3LL IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved DocID028758 Rev 2 13/13