STP22N60M6

STP22N60M6 Datasheet N-channel 600 V, 196 mΩ typ., 15 A, MDmesh™ M6 Power MOSFET in a TO-220 package Features TAB 1 2 3 TO-220 Order code VDS RDS(on) max. ID STP22N60M6 600 V 230 mΩ 15 A • • Reduced switching losses Lower RDS(on) per area vs previous generation • • • Low gate input resistance 100% avalanche tested Zener-protected D(2, TAB) Applications • • • G(1) S(3) AM01475V1 Switching applications LLC converters Boost PFC converters Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status link STP22N60M6 Product summary Order code STP22N60M6 Marking 22N60M6 Package TO-220 Packing Tube DS12818 - Rev 1 - November 2018 For further information contact your local STMicroelectronics sales office. www.st.com STP22N60M6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V Drain current (continuous) at Tcase = 25 °C 15 Drain current (continuous) at Tcase = 100 °C 9.5 IDM(1) Drain current (pulsed) 42 A PTOT Total power dissipation at Tcase = 25 °C 130 W dv/dt(2) Peak diode recovery voltage slope 15 dv/dt(3) MOSFET dv/dt ruggedness 100 Tstg Storage temperature range VGS ID Tj Parameter Operating junction temperature range A V/ns -55 to 150 °C Value Unit 1. Pulse width is limited by safe operating area. 2. ISD ≤ 15 A, di/dt = 400 A/μs, VDS < V(BR)DSS, VDD = 400 V 3. VDS ≤ 480 V Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case 0.96 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 °C/W Value Unit 2.9 A 230 mJ Table 3. Avalanche characteristics Symbol IAR EAS DS12818 - Rev 1 Parameter Avalanche current, repetitive or non-repetitive (pulse width limited by TJmax) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) page 2/13 STP22N60M6 Electrical characteristics 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified). Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. 600 Zero gate voltage drain current IGSS 1 VGS = 0 V, VDS = 600 V, Tcase = 125 100 °C(1) Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance ID = 7.5 A, VGS = 10 V Unit V VGS = 0 V, VDS = 600 V IDSS Max. µA ±5 µA 4 4.75 V 196 230 mΩ Min. Typ. Max. Unit - 800 - - 52.6 - - 4.3 - 3.25 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 181 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 4.7 - Ω Qg Total gate charge VDD = 480 V, ID = 15 A, - 20 - Qgs Gate-source charge VGS = 0 to 10 V - 5.6 - Gate-drain charge (see Figure 14. Test circuit for gate charge behavior) - 9.5 - Qgd VDS = 100 V, f = 1 MHz, VGS = 0 V pF nC 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS12818 - Rev 1 Parameter Test conditions Min. Typ. Max. Turn-on delay time VDD = 300 V, ID = 7.5 A, - 13.6 - Rise time RG = 4.7 Ω, VGS = 10 V - 6.3 - Turn-off delay time (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform) - 32 - - 8.7 - Fall time Unit ns page 3/13 STP22N60M6 Electrical characteristics Table 7. Source-drain diode Symbol ISD ISDM(1) (2) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 15 A Source-drain current (pulsed) - 42 A 1.6 V Forward on voltage ISD = 15 A, VGS = 0 V - trr Reverse recovery time ISD = 15 A, di/dt = 100 A/µs, - 217 ns Qrr Reverse recovery charge VDD = 60 V - 1.99 µC Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 18.3 A - 299 ns - 2.95 μC - 19.7 A VSD IRRM trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 15 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 15. Test circuit for inductive load switching and diode recovery times) 1. Pulse width is limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DS12818 - Rev 1 page 4/13 STP22N60M6 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Thermal impedance Figure 1. Safe operating area ID (A) GIPG061120181053SOA Operation in this area is limited by R DS(on) tp =1 µs 10 1 tp =10 µs tp =100 µs tp =1 ms TJ≤150 °C TC=25 °C VGS=10 V single pulse 10 0 10 -1 10 -1 10 0 tp =10 ms 10 1 VDS (V) 10 2 Figure 3. Output characteristics ID (A) Figure 4. Transfer characteristics GIPG061120181052OCH VGS =10 V VGS =9 V 42 36 24 42 VDS = 14 V 30 24 18 VGS =7 V 12 18 12 6 VGS =6 V 2 4 6 8 10 12 14 VDS (V) Figure 5. Gate charge vs gate-source voltage VDS (V) VDD = 480 V ID = 15 A 600 500 400 GIPG061120181052TCH 36 VGS =8 V 30 0 0 ID (A) Qgd Qgs 12 212 8 5 6 7 8 9 VGS (V) Figure 6. Static drain-source on-resistance RDS(on) (mΩ) 10 VDS 0 4 (V) GIPG061120181050QVG VGS Qg 6 GIPG061120181210RID VGS = 10 V 208 204 200 300 6 200 4 100 2 0 0 DS12818 - Rev 1 4 8 12 16 20 0 Qg (nC) 196 192 188 184 0 2 4 6 8 10 12 14 ID (A) page 5/13 STP22N60M6 Electrical characteristics (curves) Figure 7. Capacitance variations C (pF) EOSS (µJ) 8 GIPG061120181052CVR 10 3 CISS GADG061120181125EOS 7 6 5 10 2 10 1 Figure 8. Output capacitance stored energy 4 f = 1 MHz COSS 3 CRSS 2 1 10 0 10 -1 10 0 10 1 10 2 VDS (V) Figure 9. Normalized gate threshold voltage vs temperature VGS(th) (norm.) GADG190720181456VTH 200 300 400 500 600 VDS (V) Figure 10. Normalized on-resistance vs temperature RDS(on) (norm.) GADG190720181456RON VGS = 10 V 1.8 1.0 1.4 0.9 1 0.8 0.6 0.7 0.6 -75 100 2.2 ID = 250 µA 1.1 0 0 -25 25 75 125 Tj (°C) Figure 11. Normalized V(BR)DSS vs temperature V(BR)DSS (norm.) GADG190720181457BDV -25 25 75 125 Tj (°C) Figure 12. Source-drain diode forward characteristics VSD (V) GIPG061120181205SDF 1.1 ID = 1 mA 1.08 0.2 -75 Tj = -50 °C 1.0 1.04 0.9 Tj = 25 °C 1.00 0.8 0.96 0.92 0.88 -75 DS12818 - Rev 1 Tj = 150 °C 0.7 0.6 -25 25 75 125 Tj (°C) 0.5 0 2 4 6 8 10 12 14 ISD (A) page 6/13 STP22N60M6 Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior VDD RL RL 2200 + μF 3.3 μF VDD VD RG VGS IG= CONST VGS + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v10 AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A VD 100 µH fast diode B B B 3.3 µF D G + Figure 16. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 18. Switching time waveform Figure 17. Unclamped inductive waveform ton V(BR)DSS td(on) toff td(off) tr tf VD 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS12818 - Rev 1 page 7/13 STP22N60M6 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS12818 - Rev 1 page 8/13 STP22N60M6 TO-220 type A package information 4.1 TO-220 package information Figure 19. TO-220 type A package outline 0015988_typeA_Rev_22 DS12818 - Rev 1 page 9/13 STP22N60M6 TO-220 type A package information Table 8. TO-220 type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 DS12818 - Rev 1 Typ. 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 page 10/13 STP22N60M6 Revision history Table 9. Document revision history DS12818 - Rev 1 Date Version 16-Nov-2018 1 Changes First release. page 11/13 STP22N60M6 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 TO-220 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 DS12818 - Rev 1 page 12/13 STP22N60M6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS12818 - Rev 1 page 13/13