STP60N3LH5

STD60N3LH5, STP60N3LH5 STU60N3LH5, STU60N3LH5-S N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, Short IPAK, TO-220 STripFET™ V Power MOSFET Features ■ ■ Order codes VDSS RDS(on) max ID STD60N3LH5 30 V 0.008 Ω 48 A STP60N3LH5 30 V 0.0084 Ω 48 A STU60N3LH5 30 V 0.0084 Ω 48 A STU60N3LH5-S 30 V 0.0084 Ω 48 A 3 2 1 3 1 TO-220 2 IPAK RDS(on) * Qg industry benchmark 3 Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses 2 3 1 DPAK Figure 1. Application 1 Short IPAK Internal schematic diagram Switching applications Description This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit. Table 1. Device summary Order codes Marking Package Packaging STD60N3LH5 60N3LH5 DPAK Tape and reel STP60N3LH5 60N3LH5 TO-220 STU60N3LH5 60N3LH5 IPAK STU60N3LH5-S 60N3LH5 Short IPAK April 2011 Doc ID 14079 Rev 4 Tube 1/21 www.st.com 21 Contents STD60N3LH5, STP60N3LH5, STU60N3LH5, STU60N3LH5-S Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2/21 .............................................. 8 Doc ID 14079 Rev 4 STD60N3LH5, STP60N3LH5, STU60N3LH5, STU60N3LH5-S 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VDS Drain-source voltage (VGS = 0) @ TJMAX 35 V VGS Gate-Source voltage ± 20 V ID (1) Drain current (continuous) at TC = 25 °C 48 A ID Drain current (continuous) at TC = 100 °C 42.8 A Drain current (pulsed) 192 A Total dissipation at TC = 25 °C 60 W Derating factor 0.4 W/°C Single pulse avalanche energy 160 mJ Operating junction temperature Storage temperature -55 to 175 °C Value Unit IDM (2) PTOT EAS (3) Tj Tstg 1. Limited by wire bonding. 2. Pulse width limited by safe operating area. 3. Starting Tj = 25 °C, ID = 24 A, VDD = 12 V. Table 3. Symbol Thermal resistance Parameter Rthj-case Thermal resistance junction-case max. 2.5 °C/W Rthj-amb Thermal resistance junction-case max. 100 °C/W Maximum lead temperature for soldering purpose 275 °C Tj Doc ID 14079 Rev 4 3/21 Electrical characteristics 2 STD60N3LH5, STP60N3LH5, STU60N3LH5, STU60N3LH5-S Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol Parameter Test conditions Drain-source breakdown Voltage ID = 250 µA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 30 V VDS = 30 V,Tc = 125 °C IGSS Gate body leakage current (VDS = 0) VGS = ± 20 V Gate threshold voltage VDS= VGS, ID = 250 µA V(BR)DSS VGS(th) RDS(on) Table 5. Symbol Static drain-source on resistance Max. 30 Unit V ±100 nA 1.8 3 V VGS= 10 V, ID= 24 A SMD version 0.0072 0.008 Ω VGS= 10 V, ID= 24 A 0.0076 0.0084 Ω VGS= 5 V, ID= 24 A SMD version 0.0088 0.011 Ω VGS= 5 V, ID= 24 A 0.0092 0.0114 Ω 1 Dynamic Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance Qg Qgs Qgd RG Typ. µA µA Test conditions Qgs2 Min. 1 10 Parameter Qgs1 4/21 Static Min. Typ. Max. Unit VDS =25 V, f=1 MHz, VGS=0 - 1350 265 32 1620 318 38 pF pF pF Total gate charge Gate-source charge Gate-drain charge VDD=15 V, ID = 48 A VGS =5 V (Figure 14) - 8.8 4.7 2.2 12.3 6.6 3.1 nC nC nC Pre Vth gate-to-source charge Post Vth gate-to-source charge VDD=15 V, ID = 48 A VGS =5 V (Figure 19) 2.2 3.1 nC 2.5 3.5 nC Gate input resistance f=1 MHz gate bias Bias= 0 test signal level=20 mV open drain - 1.1 1.3 Ω Doc ID 14079 Rev 4 STD60N3LH5, STP60N3LH5, STU60N3LH5, STU60N3LH5-S Table 6. Symbol Electrical characteristics Switching on/off (resistive load) Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=10 V, ID= 24 A, RG=4.7 Ω, VGS= 10 V (Figure 13 and Figure 18) - 6 33 - ns ns td(off) tf Turn-off delay time Fall time VDD=10 V, ID= 24 A, RG=4.7 Ω, VGS= 10 V (Figure 13 and Figure 18) - 19 4.2 - ns ns Min. Typ. Max. Unit - 48 192 A A 1.1 V Table 7. Source drain diode Symbol Parameter ISD ISDM Source-drain current Source-drain current (pulsed)(1) VSD Forward on voltage ISD=24 A, VGS=0 - trr Qrr Reverse recovery time Reverse recovery charge Reverse recovery current ISD=48 A, di/dt =100 A/µs, VDD=20 V, (Figure 15) - IRRM Test conditions 25 18.5 1.5 ns nC A 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Doc ID 14079 Rev 4 5/21 Electrical characteristics STD60N3LH5, STP60N3LH5, STU60N3LH5, STU60N3LH5-S 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Thermal impedance Figure 5. Transfer characteristics (6 )$ ! 4J # 4C # IS A E AR  Figure 3. 3INGLE PULSE ON  IS $3 TH 2 IN AX N IO YM T RA B PE ED / IMIT , —S MS  MS    Figure 4.    6$36 Output characteristics AM03360v1 ID (A) 160 140 120 100 80 60 40 20 0 0 Figure 6. 6/21 Normalized BVDSS vs temperature Figure 7. Doc ID 14079 Rev 4 1 2 3 4 5 VGS(V) Static drain-source on resistance STD60N3LH5, STP60N3LH5, STU60N3LH5, STU60N3LH5-S Figure 8. Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Electrical characteristics Capacitance variations Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Doc ID 14079 Rev 4 7/21 Test circuits 3 STD60N3LH5, STP60N3LH5, STU60N3LH5, STU60N3LH5-S Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/21 0 Doc ID 14079 Rev 4 10% AM01473v1 STD60N3LH5, STP60N3LH5, STU60N3LH5, STU60N3LH5-S Test circuits Figure 19. Gate charge waveform Doc ID 14079 Rev 4 9/21 Package mechanical data 4 STD60N3LH5, STP60N3LH5, STU60N3LH5, STU60N3LH5-S Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/21 Doc ID 14079 Rev 4 STD60N3LH5, STP60N3LH5, STU60N3LH5, STU60N3LH5-S Table 8. Package mechanical data Short IPAK mechanical dimensions mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e 2.25 e1 4.40 4.60 H 9.80 10.40 L 3.00 3.40 L1 0.80 1.20 L2 0.80 1.00 Figure 20. Short IPAK mechanical drawing 
@" Doc ID 14079 Rev 4 11/21 Package mechanical data Table 9. STD60N3LH5, STP60N3LH5, STU60N3LH5, STU60N3LH5-S DPAK (TO-252) mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 5.10 E 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 0.80 L4 0.60 1 R 0.20 V2 0° 8° Figure 21. DPAK footprint(a) 6.7 1.8 3 1.6 2.3 6.7 2.3 1.6 a. All dimension are in millimeters 12/21 Doc ID 14079 Rev 4 AM08850v1 STD60N3LH5, STP60N3LH5, STU60N3LH5, STU60N3LH5-S Package mechanical data Figure 22. DPAK (TO-252) drawing 0068772_G Doc ID 14079 Rev 4 13/21 Package mechanical data Table 10. STD60N3LH5, STP60N3LH5, STU60N3LH5, STU60N3LH5-S IPAK (TO-251) mechanical data mm. Dim. Min. Typ. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 5.40 0.3 B5 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 4.60 H 14/21 Max. 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 o 10 Doc ID 14079 Rev 4 1.00 STD60N3LH5, STP60N3LH5, STU60N3LH5, STU60N3LH5-S Package mechanical data Figure 23. IPAK (TO-251) drawing 0068771_H AM09214V1 Doc ID 14079 Rev 4 15/21 Package mechanical data Table 11. STD60N3LH5, STP60N3LH5, STU60N3LH5, STU60N3LH5-S TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 16/21 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 14079 Rev 4 STD60N3LH5, STP60N3LH5, STU60N3LH5, STU60N3LH5-S Package mechanical data Figure 24. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 14079 Rev 4 17/21 Packaging mechanical data 5 STD60N3LH5, STP60N3LH5, STU60N3LH5, STU60N3LH5-S Packaging mechanical data Table 12. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 18/21 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 Doc ID 14079 Rev 4 18.4 22.4 STD60N3LH5, STP60N3LH5, STU60N3LH5, STU60N3LH5-S Packaging mechanical data Figure 25. Tape for DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 26. Reel for DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Doc ID 14079 Rev 4 19/21 Revision history 6 STD60N3LH5, STP60N3LH5, STU60N3LH5, STU60N3LH5-S Revision history Table 13. 20/21 Document revision history Date Revision Changes 19-Oct-2007 1 First release 23-Sep-2008 2 VGS value has been changed on Table 2 and Table 5 20-Apr-2009 3 – Inserted typical adn maximum value in VGS(th) parameter – Figure 5: Transfer characteristics has been updated – Added device in TO-220 05-Apr-2011 4 – Added device in Short IPAK – Added max values in Table 5: Dynamic – VGS value has been changed in Table 2 and Table 4 Doc ID 14079 Rev 4 STD60N3LH5, STP60N3LH5, STU60N3LH5, STU60N3LH5-S Please Read Carefully: Information in this document is provided solely in connection with ST products. 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The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2011 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 14079 Rev 4 21/21