STP34NM60N

STF34NM60N STP34NM60N, STW34NM60N N-channel 600 V, 0.092 Ω 29 A MDmesh™ II Power MOSFET , TO-220, TO-247, TO-220FP Features Type STF34NM60N STP34NM60N STW34NM60N ■ ■ ■ VDSS 600 V 600 V 600 V RDS(on) max. 0.105 Ω 0.105 Ω 0.105 Ω ID 29 A 29 A 29 A PTOT 40 W 210 W 210 W 2 1 3 1 3 2 TO-247 TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 3 1 2 TO-220FP Application Switching applications Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Table 1. Device summary Marking Package TO-220FP TO-220 TO-247 Packaging Order codes STF34NM60N STP34NM60N STW34NM60N 34NM60N Tube March 2011 Doc ID 17740 Rev 3 1/17 www.st.com 17 Contents STF34NM60N, STP34NM60N, STW34NM60N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuits .............................................. 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 Doc ID 17740 Rev 3 STF34NM60N, STP34NM60N, STW34NM60N Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (2) Absolute maximum ratings Value Parameter TO-220, TO-247 Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Avalanche current, repetitive or notrepetitive (pulse width limited by TJ max) Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Storage temperature Max. operating junction temperature - 55 to 150 °C 150 29 18 116 210 10.5 345 15 1200 600 ± 25 29 (1) 18 116 40 TO-220FP V V A A A W A mJ V/ns V Unit PTOT IAR EAS dv/dt(3) VISO Tstg TJ 1. Limited only by maximu temperature allowed. 2. Pulse width limited by safe operating area. 3. ISD ≤ 29 A, di/dt ≤ 400 A/µs, VDS peak ≤V(BR)DSS, VDD = 80% V(BR)DSS Table 3. Symbol Rthj-case Rthj-amb Tl Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 62.5 TO-220 0.60 50 300 TO-247 TO-220FP 3.13 62.5 Unit °C/W °C/W °C Doc ID 17740 Rev 3 3/17 Electrical characteristics STF34NM60N, STP34NM60N, STW34NM60N 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol On/off states Value Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions Min. Typ. Max. V 1 100 100 2 3 0.092 4 0.105 µA µA nA V Ω Unit V(BR)DSS IDSS IGSS VGS(th) RDS(on) ID = 1 mA, VGS = 0 VDS = Max rating VDS = Max rating @125 °C VGS = ± 25 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 14.5 A 600 Table 5. Symbol Ciss Coss Crss Coss eq.(1) td(on) tr td(off) tf Qg Qgs Qgd Rg Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Gate input resistance Test conditions Min. Typ. 2722 173 1.75 458 17 34 106 67 83.6 14 45 2.9 Max. Unit pF pF pF pF ns ns ns ns nC nC nC Ω VDS = 100 V, f = 1 MHz, VGS = 0 - - VGS = 0, VDS = 0 to 480 V VDD =300 V, ID = 14.5 A RG = 4.7 Ω, VGS = 10 V (see Figure 23), (see Figure 18) VDD = 480 V, ID = 29 A, VGS = 10 V, (see Figure 19) f=1MHz Gate DC Bias=0 Test signal level=20 mV Open drain - - - - - - - - 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/17 Doc ID 17740 Rev 3 STF34NM60N, STP34NM60N, STW34NM60N Electrical characteristics Table 6. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 29 A, VGS = 0 ISD = 29 A, VDD = 60 V di/dt=100 A/µs (see Figure 20) ISD = 29 A,VDD = 60 V di/dt=100 A/µs, TJ = 150 °C (see Figure 20) Test conditions Min. 408 8 39 480 10 42 Typ. Max. 29 116 1.6 Unit A A V ns nC A ns nC A - 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. Doc ID 17740 Rev 3 5/17 Electrical characteristics STF34NM60N, STP34NM60N, STW34NM60N 2.1 Figure 2. ID (A) Electrical characteristics (curves) Safe operating area for TO-220 AM09017v1 Tj=150°C Tc=25°C Single pulse Figure 3. Thermal impedance for TO-220 100 O Li per m at ite io d ni by n m this ax a R rea D S( on ) 10 is 10µs 100µs 1ms 10ms 1 0.1 0.1 1 10 100 VDS(V) Figure 4. ID (A) 100 Safe operating area for TO-220FP AM09018v1 Tj=150°C Tc=25°C Single pulse Figure 5. Thermal impedance for TO-220FP 10 1 is ea ar (on) is DS th in ax R n tio y m a er d b Op mite Li 10µs 100µs 1ms 10ms 0.1 0.01 0.1 1 10 100 VDS(V) Figure 6. ID (A) Safe operating area for TO-247 AM09019v1 Tj=150°C Tc=25°C Single pulse Figure 7. Thermal impedance for TO-247 100 is ea ) ar S(on t RD x in n ma tio by ra pe ed O mit Li s hi 10µs 100µs 1ms 10ms 10 1 0.1 0.1 1 10 100 VDS(V) 6/17 Doc ID 17740 Rev 3 STF34NM60N, STP34NM60N, STW34NM60N Figure 8. ID (A) 80 70 60 6V 50 40 30 20 10 0 0 5 10 15 20 25 5V VGS=10V Electrical characteristics Figure 9. Transfer characteristics AM09021v1 Output characteristics AM09020v1 ID (A) 80 VDS=20V 70 60 50 40 30 20 10 VDS(V) 0 0 2 4 6 8 VGS(V) 30 Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance VGS (V) 12 10 8 6 4 100 2 0 0 2 4 6 8 10 12 14 50 0 16 Qg(nC) 0.088 0.086 0 5 10 15 20 25 30 ID(A) AM09022v1 VDS VDD=480V ID=29A 400 350 300 250 200 150 RDS(on) (Ω) 0.098 0.096 0.094 0.092 0.090 AM09023v1 VGS=10V Figure 12. Capacitance variations C (pF) 10000 Ciss AM09024v1 Figure 13. Output capacitance stored energy Eoss (µJ) AM09025v1 2 1000 Coss 1 10 Crss 1 10 100 VDS(V) 100 1 0.1 0 0 100 200 300 400 500 VDS(V) Doc ID 17740 Rev 3 7/17 Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature VGS(th) (norm) STF34NM60N, STP34NM60N, STW34NM60N Figure 15. Normalized on resistance vs temperature RDS(on) (norm) AM09026v1 AM09027v1 ID=250µA 1.10 2.1 1.9 ID=14.5A 1.00 1.7 1.5 0.90 1.3 1.1 0.80 0.9 0.7 0.70 -50 -25 0 25 50 75 100 TJ(°C) 0.5 -50 -25 0 25 50 75 100 TJ(°C) Figure 16. Normalized BVDSS vs temperature BVDSS (norm) Figure 17. Source-drain diode forward characteristics VSD (V) 1.6 1.4 1.2 1.0 0.8 TJ=150°C TJ=-50°C TJ=25°C AM09039v1 AM00897v1 ID=1mA 1.07 1.05 1.03 1.01 0.99 0.97 0.95 0.93 -50 -25 0 25 50 75 100 TJ(°C) 0.6 0.4 0 5 10 15 20 25 ISD(A) 8/17 Doc ID 17740 Rev 3 STF34NM60N, STP34NM60N, STW34NM60N Test circuits 3 Test circuits Figure 19. Gate charge test circuit VDD 12V 2200 Figure 18. Switching times test circuit for resistive load 47kΩ 100nF 1kΩ RL VGS VD RG PW D.U.T. μF 3.3 μF VDD Vi=20V=VGMAX 2200 μF IG=CONST 2.7kΩ 47kΩ PW 1kΩ 100Ω D.U.T. VG AM01468v1 AM01469v1 Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit A D G S B 25 Ω D.U.T. A FAST DIODE B A L=100μH B D G 3.3 μF 1000 μF L VD 2200 μF 3.3 μF VDD VDD ID RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 22. Unclamped inductive waveform V(BR)DSS VD Figure 23. Switching time waveform ton tdon tr toff tdoff tf 90% IDM 90% 10% ID VDD VDD 0 10% VDS 90% VGS AM01472v1 0 10% AM01473v1 Doc ID 17740 Rev 3 9/17 Package mechanical data STF34NM60N, STP34NM60N, STW34NM60N 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/17 Doc ID 17740 Rev 3 STF34NM60N, STP34NM60N, STW34NM60N Table 7. Dim. Min. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia 28.6 9.8 2.9 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 Typ. Package mechanical data TO-220FP mechanical data mm Max. 4.6 2.7 2.75 0.7 1 1.70 1.70 5.2 2.7 10.4 30.6 10.6 3.6 16.4 9.3 3.2 Figure 24. TO-220FP drawing L7 E A B D Dia L6 L5 F1 F2 F H G1 G L2 L3 L4 7012510_Rev_K Doc ID 17740 Rev 3 11/17 Package mechanical data STF34NM60N, STP34NM60N, STW34NM60N Table 8. Dim. TO-220 type A mechanical data mm Min. Typ. Max. 4.60 0.88 1.70 0.70 15.75 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 4.40 0.61 1.14 0.48 15.25 ∅P Q 12/17 Doc ID 17740 Rev 3 STF34NM60N, STP34NM60N, STW34NM60N Figure 25. TO-220 type A drawing Package mechanical data 0015988_typeA_Rev_S Doc ID 17740 Rev 3 13/17 Package mechanical data STF34NM60N, STP34NM60N, STW34NM60N Table 9. Dim. TO-247 mechanical data mm Min. Typ. Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 A A1 b b1 b2 c D E e L L1 L2 ∅P ∅R S 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 14/17 Doc ID 17740 Rev 3 STF34NM60N, STP34NM60N, STW34NM60N Figure 26. TO-247 drawing Package mechanical data 0075325_F Doc ID 17740 Rev 3 15/17 Revision history STF34NM60N, STP34NM60N, STW34NM60N 5 Revision history Table 10. Date 05-Aug-2010 02-Sep-2010 08-Mar-2011 Document revision history Revision 1 2 3 Initial release. Updated title on cover page and Table 4: On/off states. Document status promoted from preliminary data to datasheet. Changes 16/17 Doc ID 17740 Rev 3 STF34NM60N, STP34NM60N, STW34NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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