STP6N60M2

STF6N60M2, STP6N60M2, STU6N60M2 N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh™ M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order code 3 2 1 1 2 IPAK 3 TO-220FP VDS @ TJmax RDS(on) max ID 650 V 1.2 Ω 4.5 A STF6N60M2 STP6N60M2 TAB STU6N60M2 • Extremely low gate charge • Excellent output capacitance (Coss) profile 3 1 2 • 100% avalanche tested TO-220 • Zener-protected Figure 1. Internal schematic diagram , TAB Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. AM15572v1 Table 1. Device summary Order code Marking STF6N60M2 STP6N60M2 Package TO-220FP 6N60M2 TO-220 STU6N60M2 October 2015 This is information on a product in full production. Packing Tube IPAK DocID024771 Rev 2 1/18 www.st.com Contents STF6N60M2, STP6N60M2, STU6N60M2 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 2/18 .............................................. 9 4.1 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 TO-220 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3 IPAK(TO-251) package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 DocID024771 Rev 2 STF6N60M2, STP6N60M2, STU6N60M2 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220FP VGS Gate-source voltage TO-220, IPAK ± 25 V (1) 4.5 A ID Drain current (continuous) at TC = 25 °C 4.5 ID Drain current (continuous) at TC = 100 °C 2.9(1) 2.9 A (1) 18 A 60 W IDM (2) Drain current (pulsed) 18 PTOT Total dissipation at TC = 25 °C VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC=25 °C) dv/dt(3) dv/dt (4) Tstg Tj 20 2500 V Peak diode recovery voltage slope 15 MOSFET dv/dt ruggedness 50 Storage temperature V/ns - 55 to 150 Operating junction temperature °C 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 4.5 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V 4. VDS ≤ 480 V Table 3. Thermal data Value Symbol Parameter Unit TO-220FP Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max TO-220 6.25 IPAK 2.08 62.5 °C/W 100 °C/W Table 4. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 1 A EAS Single pulse avalanche energy (starting Tj=25°C, ID= IAR; VDD=50) 86 mJ DocID024771 Rev 2 3/18 18 Electrical characteristics 2 STF6N60M2, STP6N60M2, STU6N60M2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 IDSS VDS = 600 V Zero gate voltage drain current (VGS = 0) VDS = 600 V, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Min. Typ. Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance Unit 600 V 1 µA 100 µA ±10 µA 3 4 V 1.06 1.2 Ω Min. Typ. Max. Unit - 232 - pF - 14 - pF - 0.7 - pF VGS = ± 25 V VGS(th) Max. 2 VGS = 10 V, ID = 2.25 A Table 6. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 - 71 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 6.5 - Ω Qg Total gate charge - 8 - nC Qgs Gate-source charge - 1.7 - nC Qgd Gate-drain charge VDD = 480 V, ID = 4.5 A, VGS = 10 V (see Figure 18) - 4 - nC VDS = 100 V, f = 1 MHz, VGS = 0 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7. Switching times Symbol td(on) tr td(off) tf 4/18 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD = 300 V, ID = 1.65 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17 and Figure 22) Fall time DocID024771 Rev 2 Min. Typ. Max. Unit - 9.5 - ns - 7.4 - ns - 24 - ns - 22.5 - ns STF6N60M2, STP6N60M2, STU6N60M2 Electrical characteristics Table 8. Source drain diode Symbol ISD Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 4.5 A ISDM (1) Source-drain current (pulsed) - 18 A VSD (2) Forward on voltage - 1.6 V ISD = 4.5 A, VGS = 0 trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 4.5 A, di/dt = 100 A/µs VDD = 60 V (see Figure 19) ISD = 4.5 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 19) - 274 ns - 1.47 µC - 10.7 A - 376 ns - 1.96 µC - 10.5 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID024771 Rev 2 5/18 18 Electrical characteristics 2.1 STF6N60M2, STP6N60M2, STU6N60M2 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP AM15886v1 ID (A) Op Lim era ite tion d by in t m his ax ar RD ea S( is on 10 ) 10µs 1 100µs 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 10 1 100 VDS(V) Figure 4. Safe operating area for TO-220 Figure 5. Thermal impedance for TO-220 AM15885v1 ID (A) 10 ) Op Lim era ite tion d by in t m his ax ar RD ea S( is on 10µs 1 100µs 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 10 1 100 VDS(V) Figure 6. Safe operating area for IPAK Figure 7. Thermal impedance for IPAK AM15875v1 ID (A) 10 ) Op Lim era ite tion d by in t m his ax ar RD ea S( is on 10µs 1 100µs 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 6/18 1 10 100 VDS(V) DocID024771 Rev 2 STF6N60M2, STP6N60M2, STU6N60M2 Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics AM15876v1 ID (A) 8 VGS= 8, 9, 10 V VGS= 7 V 7 AM15877v1 ID (A) 8 VDS= 20 V 7 6 6 VGS= 6 V 5 5 4 4 3 3 VGS= 5 V 2 2 1 1 VGS= 4 V 0 5 0 10 15 0 20 VDS(V) 0 Figure 10. Gate charge vs gate-source voltage AM15878v1 VDS VGS (V) 12 (V) VDD=480V ID=4.5V VDS 10 4 2 6 8 10 VGS(V) Figure 11. Static drain-source on-resistance AM15879v1 RDS(on) (Ω) 500 1.120 400 1.100 300 1.080 200 1.060 100 1.040 VGS=10V 8 6 4 2 0 0 4 2 6 8 0 Qg(nC) Figure 12. Capacitance variations 0 1 2 3 4 ID(A) Figure 13. Normalized VDS vs temperature AM15880v1 C (pF) 1.020 AM15883v1 RDS(on) (norm) VGS=10 V 2.3 1000 2.1 Ciss 100 1.9 1.7 1.5 10 Coss 1 Crss 1.3 1.1 0.1 0.1 1 10 100 VDS(V) 0.9 0.7 0.5 -50 -25 DocID024771 Rev 2 0 25 50 75 100 TJ(°C) 7/18 18 Electrical characteristics STF6N60M2, STP6N60M2, STU6N60M2 Figure 14. Normalized gate threshold voltage vs temperature AM15882v1 VGS(th) (norm) Figure 15. Normalized on-resistance vs temperature AM15883v1 RDS(on) (norm) VGS=10 V 2.3 1.1 ID=250 µA 2.1 1.9 1.0 1.7 1.5 0.9 1.3 1.1 0.8 0.9 0.7 -50 -25 0.7 0.5 -50 -25 0 25 50 75 100 TJ(°C) Figure 16. Source-drain diode forward characteristics AM15884v1 VSD (V) 1.4 1.2 TJ=-50°C 1 0.8 0.6 TJ=150°C TJ=25°C 0.4 0.2 0 0 8/18 1 2 3 4 ISD(A) DocID024771 Rev 2 0 25 50 75 100 TJ(°C) STF6N60M2, STP6N60M2, STU6N60M2 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01469v1 AM01468v1 Figure 19. Test circuit for inductive load switching and diode recovery times A A Figure 20. Unclamped inductive load test circuit L A D G FAST DIODE D.U.T. S 3.3 μF B B B VD L=100μH 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01471v1 AM01470v1 Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform ton 9%5'66 tdon 9' toff tr tdoff tf 90% 90% ,'0 10% ,' 9'' 10% 0 9'' VDS 90% VGS $0Y 0 DocID024771 Rev 2 10% AM01473v1 9/18 18 Package information 4 STF6N60M2, STP6N60M2, STU6N60M2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/18 DocID024771 Rev 2 STF6N60M2, STP6N60M2, STU6N60M2 4.1 Package information TO-220FP package information Figure 23. TO-220FP package outline 7012510_Rev_K_B DocID024771 Rev 2 11/18 18 Package information STF6N60M2, STP6N60M2, STU6N60M2 Table 9. TO-220FP mechanical data mm Dim. Min. Typ. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 12/18 Max. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID024771 Rev 2 STF6N60M2, STP6N60M2, STU6N60M2 4.2 Package information TO-220 package information Figure 24. TO-220 type A package outline BW\SH$B5HYB7 DocID024771 Rev 2 13/18 18 Package information STF6N60M2, STP6N60M2, STU6N60M2 Table 10. TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 14/18 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DocID024771 Rev 2 STF6N60M2, STP6N60M2, STU6N60M2 4.3 Package information IPAK(TO-251) package information Figure 25. IPAK (TO-251) type A package outline B,.BW\SH$BUHY DocID024771 Rev 2 15/18 18 Package information STF6N60M2, STP6N60M2, STU6N60M2 Table 11. IPAK (TO-251) type A mechanical data mm. DIM min. typ. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 B5 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 H 16/18 max. 4.60 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 10° DocID024771 Rev 2 1.00 STF6N60M2, STP6N60M2, STU6N60M2 5 Revision history Revision history Table 12. Document revision history Date Revision 11-Jun-2013 1 First release. 2 Updated title, features and description. Updated Table 2.: Absolute maximum ratings and Table 8.: Source drain diode. Updated 4.3: IPAK(TO-251) package information. Minor text changes. 01-Oct-2015 Changes DocID024771 Rev 2 17/18 18 STF6N60M2, STP6N60M2, STU6N60M2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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