STP28N60M2

STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2 Power MOSFETs in D²PAK, I²PAK, TO-220 and TO-247 Datasheet - production data Features Order code VDS @ TJmax RDS(on) max. ID 650 V 0.150 Ω 22 A STB28N60M2 STI28N60M2 STP28N60M2 STW28N60M2     Figure 1: Internal schematic diagram Applications   D ( 2 TAB ) Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Switching applications LCC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. G(1) S(3) AM15572V1 Table 1: Device summary Order code Marking STB28N60M2 STI28N60M2 STP28N60M2 28N60M2 STW28N60M2 March 2017 Package Packing D²PAK Tape and reel I²PAK TO-220 Tube TO-247 DocID025254 Rev 4 This is information on a product in full production. 1/21 www.st.com Contents STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 5 2/21 4.1 D²PAK package information ............................................................ 10 4.2 D²PAK packing information ............................................................. 13 4.3 I²PAK package information ............................................................. 15 4.4 TO-220 type A package information................................................ 16 4.5 TO-247 package information ........................................................... 18 Revision history ............................................................................ 20 DocID025254 Rev 4 STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit Gate-source voltage ±25 V ID Drain current (continuous) at TC = 25 °C 22 A ID VGS Drain current (continuous) at TC = 100 °C 14 A IDM(1) Drain current (pulsed) 88 A PTOT Total dissipation at TC = 25 °C 170 W dv/dt(2) Peak diode recovery voltage slope 15 V/ns dv/dt(3) MOSFET dv/dt ruggedness 50 V/ns Tstg Storage temperature range -55 to 150 °C Tj Operating junction temperature range Notes: (1)Pulse (2)I SD (3)V width limited by safe operating area. ≤ 22 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 400 V. DS ≤ 480 V Table 3: Thermal data Value Symbol Parameter Unit D²PAK Rthj-case I²PAK Thermal resistance junction-case max max(1) Rthj-pcb Thermal resistance junction-pcb Rthj-amb Thermal resistance junction-ambient max TO-220 TO-247 0.74 °C/W 30 °C/W 62.5 62.5 50 °C/W Notes: (1)When mounted on 1 inch² FR-4, 2 Oz copper board. Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax) 3.6 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR; VDD = 50 V) 350 mJ DocID025254 Rev 4 3/21 Electrical characteristics 2 STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 Electrical characteristics TC = 25 °C unless otherwise specified. Table 5: On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. Max. 600 Unit V VGS = 0 V, VDS = 600 V 1 µA VGS = 0 V, VDS = 600 V, TC = 125 °C(1) 100 µA ±10 µA 3 4 V 0.135 0.150 Ω Min. Typ. Max. Unit - 1440 - pF - 70 - pF - 2 - pF pF IDSS Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 11 A 2 Notes: (1) Defined by design, not subject to production test. Table 6: Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 104 - RG Intrinsic gate resistance f = 1 MHz open drain - 5.5 - Ω Qg Total gate charge 36 - nC Qgs Gate-source charge - 7.2 - nC Qgd Gate-drain charge VDD = 480 V, ID = 22 A, VGS = 0 to 10 V (see Figure 17: "Test circuit for gate charge behavior") - - 16 - nC VDS= 100 V, f = 1 MHz, VGS = 0 V Notes: (1)C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when VDS increases from 0 to 80 % VDSS. Table 7: Switching times Symbol td(on) tr td(off) tf 4/21 Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 300 V, ID = 11 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16: "Test circuit for resistive load switching times" and Figure 21: "Switching time waveform" ) DocID025254 Rev 4 Min. Typ. Max. Unit - 14.5 - ns - 7.2 - ns - 100 - ns - 8 - ns STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 Electrical characteristics Table 8: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 22 A ISDM(1) Source-drain current (pulsed) - 88 A VSD (2) Forward on voltage - 1.6 V VGS = 0 V, ISD = 22 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 22 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 21: "Switching time waveform") ISD = 22 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 21: "Switching time waveform") - 350 ns - 4.7 µC - 27 A - 451 ns - 6.5 µC - 29 A Notes: (1)Pulse width is limited by safe operating area. (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5 %. DocID025254 Rev 4 5/21 Electrical characteristics 2.1 STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 Electrical characteristics (curves) Figure 2: Safe operating area for D²PAK, TO-220 and I²PAK Figure 3: Thermal impedance for D²PAK, TO-220 and I²PAK Figure 4: Safe operating area for TO-247 Figure 5: Thermal impedance for TO-247 Figure 6: Output characteristics Figure 7: Transfer characteristics 6/21 DocID025254 Rev 4 STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 Electrical characteristics Figure 8: Gate charge vs gate-source voltage Figure 9: Static drain-source on-resistance Figure 10: Capacitance variations Figure 11: Output capacitance stored energy Figure 12: Normalized gate threshold voltage vs temperature Figure 13: Normalized on-resistance vs temperature DocID025254 Rev 4 7/21 Electrical characteristics STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 Figure 14: Normalized VDS vs temperature 8/21 Figure 15: Source-drain diode forward characteristics DocID025254 Rev 4 STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 3 Test circuits Test circuits Figure 16: Test circuit for resistive load switching times Figure 17: Test circuit for gate charge behavior Figure 18: Test circuit for inductive load switching and diode recovery times Figure 19: Unclamped inductive load test circuit Figure 20: Unclamped inductive waveform Figure 21: Switching time waveform DocID025254 Rev 4 9/21 Package information 4 STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 D²PAK package information Figure 22: D²PAK (TO-263) type A package outline 10/21 DocID025254 Rev 4 STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 Package information Table 9: D²PAK (TO-263) type A package mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10.00 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 e 10.40 2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.40 0° DocID025254 Rev 4 8° 11/21 Package information STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 Figure 23: D²PAK (TO-263) type A recommended footprint (dimensions are in mm) 12/21 DocID025254 Rev 4 STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 4.2 Package information D²PAK packing information Figure 24: D2PAK type A tape outline DocID025254 Rev 4 13/21 Package information STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 Figure 25: D2PAK type A reel outline Table 10: D²PAK type A tape and reel mechanical data Tape Reel mm mm Dim. 14/21 Dim. Min. Max. Min. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 Max. 330 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID025254 Rev 4 13.2 26.4 30.4 STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 4.3 Package information I²PAK package information Figure 26: I²PAK package outline Table 11: I²PAK package mechanical data mm Dim. Min. Typ. Max. A 4.40 - 4.60 A1 2.40 - 2.72 b 0.61 - 0.88 b1 1.14 - 1.70 c 0.49 - 0.70 c2 1.23 - 1.32 D 8.95 - 9.35 e 2.40 - 2.70 e1 4.95 - 5.15 E 10 - 10.40 L 13 - 14 L1 3.50 - 3.93 L2 1.27 - 1.40 DocID025254 Rev 4 15/21 Package information 4.4 STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 TO-220 type A package information Figure 27: TO-220 type A package outline 16/21 DocID025254 Rev 4 STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 Package information Table 12: TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 D1 15.75 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID025254 Rev 4 17/21 Package information 4.5 STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 TO-247 package information Figure 28: TO-247 package outline 0075325_8 18/21 DocID025254 Rev 4 STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 Package information Table 13: TO-247 package mechanical data mm Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 5.45 5.60 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 DocID025254 Rev 4 5.50 5.70 19/21 Revision history 5 STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 Revision history Table 14: Document revision history Date Revision 13-Sep-2013 1 First release. 2 – Modified: title, ID value and features in cover page – Modified: ID, IDM and PTOT values in Table 2 – Modified: note 2 – Modified: Rthj-case value in Table 3 – Modified: the entire typical values in Table 4, 6, 7 and 8 – Modified: RDS(on) typical value in Table 5 – Modified: Figure 9 and 10 – Added: Section 4: Package information – Minor text changes 3 – Updated title and description – Updated Table 2.: Absolute maximum ratings and Table 4.: Avalanche characteristics – Updated Figure 5.: Thermal impedance for TO-247 and Figure 6.: Output characteristics – Updated 4: Package information – Minor text changes. 4 Added part number STI28N60M2. Updated title, silhouette, features and Table 1: "Device summary" in cover page. Updated Table 3: "Thermal data" and Section 4: "Package information". Minor text changes. 29-Jan-2014 09-Feb-2015 14-Mar-2017 20/21 Changes DocID025254 Rev 4 STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved DocID025254 Rev 4 21/21