STX83003

® STX83003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s ST83003 SILICON IN TO-92 PACKAGE MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED s APPLICATIONS: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STX83003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the STX93003, its complementary PNP transistor. TO-92 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0 ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage o (I C = 0 , I B = 0 .5 A, t p < 1 0 µ s, T j < 1 50 C) Collector Current Collector Peak Current (t p < 5 m s) Base Current Base Peak Current (t p < 5 m s) Total Dissipation at T C = 2 5 o C Storage Temperature Max. Operating Junction Temperature Value 700 400 V (BR)EBO 1 3 0.5 1.5 1.5 -65 to 150 150 Unit V V V A A A A W o C o C October 2002 1/7 STX83003 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 83.3 200 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES V (BR)EBO Parameter Collector Cut-off Current (V BE = 0 ) Emitter-Base Breakdown Voltage (I C = 0 ) Test Conditions V CE = 7 00V V CE = 7 00V I E = 1 0 mA T j = 1 25 o C 12 Min. Typ. Max. 1 5 18 Unit mA mA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0 ) V CE(sat) ∗ V BE(sat) ∗ h FE ∗ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain I C = 1 0 mA L = 25 mH I C = 0 .5 A I C = 0 .35 A I C = 0 .5 A I C = 1 0 mA I C = 0 .35 A IC = 1 A I C = 0 .35 A I B1 = 7 0 mA Tp ≥ 25 µs I C = 0 .5 A V BE(off) = -5 V V clamp = 3 00 V I B = 0 .1 A I B = 5 0 mA I B = 0 .1 A V CE = 5 V V CE = 5 V V CE = 5 V V CC = 1 25 V I B2 = - 70 mA (see figure 2) I B1 = 0 .1 A L = 10 mH (see figure 1) 400 V 0.5 1 1 10 16 4 V V V 25 32 tr ts tf ts tf RESISTIVE LOAD Rise Time Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time 1.5 100 2.2 0.2 450 90 2.9 ns µs µs ns ns ∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %. 2/7 STX83003 Safe Operating Area Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 STX83003 Resistive Load Fall Time Resistive Load Storage Time Inductive Load Fall Time Inductive Load Storage Time Reverse Biased SOA 4/7 STX83003 Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 5/7 STX83003 TO-92 MECHANICAL DATA mm MIN. A b D E e e1 L R S1 W V 4.32 0.36 4.45 3.30 2.41 1.14 12.70 2.16 1.14 0.41 4 degree TYP. MAX. 4.95 0.51 4.95 3.94 2.67 1.40 15.49 2.41 1.52 0.56 6 degree MIN. 0.170 0.014 0.175 0.130 0.095 0.045 0.500 0.085 0.045 0.016 4 degree inch TYP. MAX. 0.195 0.020 0.194 0.155 0.105 0.055 0.609 0.094 0.059 0.022 6 degree DIM. 6/7 STX83003 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7