IRF740APBF-BE3

IRF740A www.vishay.com Vishay Siliconix Power MOSFET FEATURES D • Low gate charge Qg results in simple drive requirement TO-220AB Available • Improved gate, avalanche, and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified G G D S S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 N-Channel MOSFET Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 400 VGS = 10 V 0.55 Qg (Max.) (nC) 36 Qgs (nC) 9.9 Qgd (nC) Configuration APPLICATIONS • Switch mode power supply (SMPS) • Uninterruptable power supply • High speed power switching 16 Single TYPICAL SMPS TOPOLOGIES • Single transistor flyback Xfmr. reset • Single transistor forward Xfmr. reset (both for US line input only) ORDERING INFORMATION Package Lead (Pb)-free TO-220AB IRF740APbF IRF740APbF-BE3 Lead (Pb)-free and halogen-free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 400 Gate-source voltage VGS ± 30 Continuous drain current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed drain current a ID UNIT V 10 6.3 A IDM 40 1.0 W/°C Single pulse avalanche energy b EAS 630 mJ Repetitive avalanche current a IAR 10 A Repetitive avalanche energy a EAR 12.5 mJ Linear derating factor Maximum power dissipation TC = 25 °C Peak diode recovery dV/dt c Operating junction and storage temperature range Soldering recommendations (peak temperature) d Mounting torque For 10 s 6-32 or M3 screw PD 125 W dV/dt 5.9 V/ns TJ, Tstg - 55 to + 150 300d °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 50 V, starting TJ = 25 °C, L = 12.6 mH, Rg = 25 Ω, IAS = 10 A (see fig. 12) c. ISD ≤ 10 A, dV/dt ≤ 330 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case S21-0853-Rev. D, 16-Aug-2021 Document Number: 91051 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF740A www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum junction-to-ambient RthJA - 62 Case-to-sink, flat, greased surface RthCS 0.50 - Maximum junction-to-case (drain) RthJC - 1.0 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 400 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.48 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V nA Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current Drain-source on-state resistance Forward transconductance IGSS IDSS RDS(on) gfs VGS = ± 30 V - - ± 100 VDS = 400 V, VGS = 0 V - - 25 VDS = 320 V, VGS = 0 V, TJ = 125 °C - - 250 - - 0.55 Ω 4.9 - - S ID = 6.0 Ab VGS = 10 V VDS = 50 V, ID = 6.0 Ab μA Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Output capacitance Coss Effective output capacitance Coss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1030 - - 170 - - 7.7 - VGS = 0 V, VDS = 1.0 V, f = 1.0 MHz - 1490 - VGS = 0 V, VDS = 320 V, f = 1.0 MHz - 52 - VGS = 0 V, VDS = 0 V to 320 V - 61 - - - 36 Total gate charge Qg Gate-source charge Qgs - - 9.9 Gate-drain charge Qgd - - 16 Turn-on delay time td(on) - 10 - tr - 35 - - 24 - - 22 - - - 10 - - 40 Rise time Turn-off delay time Fall time td(off) VGS = 10 V ID = 10 A, VDS = 320 V, see fig. 6 and 13b VDD = 200 V, ID = 10 A, Rg = 10 Ω, RD = 19.5 Ω, see fig. 10b tf pF nC ns Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulsed diode forward current a Body diode voltage IS ISM VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Forward turn-on time ton MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IS = 10 A, VGS = 0 S Vb TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μsb - - 2.0 V - 240 360 ns - 1.9 2.9 μC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S21-0853-Rev. D, 16-Aug-2021 Document Number: 91051 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF740A www.vishay.com Vishay Siliconix 102 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V ID, Drain-to-Source Current (A) Top 10 1 4.5 V 0.1 20 µs Pulse Width TJ = 25 °C 10-2 0.1 1 102 10 VDS, Drain-to-Source Voltage (V) 91051_01 RDS(on), Drain-to-Source On Resistance (Normalized) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) ID = 10 A VGS = 10 V 2.5 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) 91051_04 Fig. 1 - Typical Output Characteristics, TC = 25 °C 102 3.0 Fig. 3 - Normalized On-Resistance vs. Temperature 105 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 10 4.5 V 1 104 C, Capacitance (pF) ID, Drain-to-Source Current (A) Top Ciss 103 Coss 102 Crss 10 20 µs Pulse Width TJ = 150 °C 0.1 0.1 1 VDS, Drain-to-Source Voltage (V) 91051_02 1 102 10 Fig. 4 - Typical Capacitance vs. Drain-to-Source Voltage 20 TJ = 150 °C 1 TJ = 25 °C 0.1 4.0 91051_03 20 µs Pulse Width VDS = 50 V 5.0 6.0 7.0 8.0 9.0 Fig. 2 - Typical Transfer Characteristics ID = 10 A VDS = 320 V 16 VDS = 200 V VDS = 80 V 12 8 4 For test circuit see figure 13 0 0 10.0 VGS, Gate-to-Source Voltage (V) S21-0853-Rev. D, 16-Aug-2021 VGS, Gate-to-Source Voltage (V) ID, Drain-to-Source Current (A) 102 10 103 VDS, Drain-to-Source Voltage (V) 91051_05 Fig. 1 - Typical Output Characteristics, TC = 150 °C 102 10 1 91051_06 10 20 30 40 QG, Total Gate Charge (nC) Fig. 5 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91051 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF740A www.vishay.com Vishay Siliconix 10.0 10 TJ = 150 °C 1 8.0 ID, Drain Current (A) ISD, Reverse Drain Current (A) 102 TJ = 25 °C 6.0 4.0 2.0 VGS = 0 V 0.1 0.2 0.4 0.6 0.8 1.2 1.0 0.0 25 1.4 VSD, Source-to-Drain Voltage (V) 91051_07 VGS ID, Drain Current (A) 10 + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 1 ms Fig. 9 - Switching Time Test Circuit VDS 10 ms 102 150 D.U.T. Rg 100 µs 1 125 RD VDS 10 µs TC = 25 °C TJ = 150 °C Single Pulse 100 Fig. 8 - Maximum Drain Current vs. Case Temperature Operation in this area limited by RDS(on) 10 75 TC, Case Temperature (°C) 91051_09 Fig. 6 - Typical Source-Drain Diode Forward Voltage 102 50 90 % 103 VDS, Drain-to-Source Voltage (V) 91051_08 Fig. 7 - Maximum Safe Operating Area 10 % VGS td(on) td(off) tf tr Fig. 10 - Switching Time Waveforms Thermal Response (ZthJC) 10 1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 10-2 10-3 10-5 91051_11 S21-0853-Rev. D, 16-Aug-2021 PDM t1 Single Pulse (Thermal Response) t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-4 10-3 10-2 0.1 1 10 t1, Rectangular Pulse Duration (s) Document Number: 91051 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF740A www.vishay.com Vishay Siliconix Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 15 V Driver L VDS D.U.T. Rg + A - VDD IAS 20 V tp 0.01 Ω Fig. 12 - Unclamped Inductive Test Circuit VDSav, Avalanche Voltage (V) 580 560 540 520 500 480 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 IAV, Avalanche Current (A) 91051_12d Fig. 15 - Typical Drain-to-Source Voltage vs. Avalanche Current VDS tp QG VGS IAS QGS EAS, Single Pulse Avalanche Energy (mJ) Fig. 13 - Unclamped Inductive Waveforms 1400 ID Top 4.5 A 6.3 A Bottom 10 A 1200 1000 QGD VG Charge Fig. 16 - Basic Gate Charge Waveform 800 Current regulator Same type as D.U.T. 600 50 kΩ 400 12 V 0.2 µF 0.3 µF 200 + D.U.T. 0 25 91051_12c 50 75 100 125 - VDS 150 Starting TJ, Junction Temperature (°C) VGS 3 mA Fig. 14 - Maximum Avalanche Energy vs. Drain Current IG ID Current sampling resistors Fig. 17 - Gate Charge Test Circuit S21-0853-Rev. D, 16-Aug-2021 Document Number: 91051 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF740A www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive Period P.W. D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 18 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91051. S21-0853-Rev. D, 16-Aug-2021 Document Number: 91051 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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