SIE816DF-T1-GE3

New Product SiE816DF Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through • 100 % Rg and UIS Tested • Compliant to RoHS directive 2002/95/EC ID (A) VDS (V) RDS(on) (Ω) Silicon Limit 60 0.0074 at VGS = 10 V 95 Package Qg (Typ.) Limit 60 51 nC Package Drawing www.vishay.com/doc?72945 PolarPAK 10 D 9 G 8 S 7 S 6 D 6 7 8 9 10 APPLICATIONS D • Primary Side Switch • Half-Bridge D D S G D G D 1 G 2 S S 3 4 Top View D 5 5 4 3 2 1 S Bottom View Top surface is connected to pins 1, 5, 6, and 10 N-Channel MOSFET For Related Documents Ordering Information: SiE816DF-T1-E3 (Lead (Pb)-free) SiE816DF-T1-GE3 (Lead (Pb)-free and Halogen-free) www.vishay.com/ppg?68641 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current ID IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range PD Limit 60 ± 20 95 (Silicon Limit) 60a (Package Limit) 60a 19.8b, c 14.8b, c 60 60a 4.3b, c 50 125 125 80 5.2b, c 3.3b, c - 55 to 150 260 Unit V A mJ W TJ, Tstg °C Soldering Recommendations (Peak Temperature)d, e Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 68641 S09-1337-Rev. B, 13-Jul-09 www.vishay.com 1 New Product SiE816DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol RthJA t ≤ 10 s Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain Top) Steady State Maximum Junction-to-Case (Source)a, c Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). Typical Maximum 20 24 RthJC (Drain) 0.8 1 RthJC (Source) 2.2 2.7 Unit °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VGS = 0 V, ID = 250 µA 60 Gate-Source Threshold Voltage Gate-Source Leakage VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS Zero Gate Voltage Drain Current IDSS Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient ID(on) On-State Drain Currenta a R Drain-Source On-State Resistance DS(on) gfs Forward Transconductancea Dynamicb Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Total Gate Charge Qg Qgs Gate-Source Charge Qgd Gate-Drain Charge Rg Gate Resistance td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Drain-Source Body Diode Characteristics IS Continuous Source-Drain Diode Current ISM Pulse Diode Forward Currenta VSD Body Diode Voltage trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge ta Reverse Recovery Fall Time tb Reverse Recovery Rise Time ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 19.8 A VDS = 15 V, ID = 19.8 A VDS = 30 V, VGS = 0 V, f = 1 MHz VDS = 30 V, VGS = 10 V, ID = 19.8 A f = 1 MHz VDD = 30 V, RL = 3 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω V 70 -9 2.5 4.4 ± 100 1 10 25 0.0061 30 3100 480 180 51 19 15 1.1 22 10 25 10 TC = 25 °C IS = 10 A IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C mV/°C 0.8 60 135 42 18 0.0074 V nA µA A Ω S pF 77 nC 2.2 30 15 40 15 60 60 1.2 90 205 Ω ns A V ns nC ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68641 S09-1337-Rev. B, 13-Jul-09 New Product SiE816DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 20 TC = - 55 °C VGS = 10 V thru 8 V 16 I D - Drain Current (A) I D - Drain Current (A) 50 40 VGS = 7 V 30 20 VGS = 6 V 10 TC = 25 °C 12 TC = 125 °C 8 4 VGS = 5 V 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0075 6 7 4000 Ciss 3000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 3500 0.0070 0.0065 VGS = 10 V 0.0060 2500 2000 1500 1000 0.0055 Coss 500 0.0050 Crss 0 0 20 40 0 60 10 ID - Drain Current (A) 20 40 50 60 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.8 10 ID = 19.8 A VDS = 30 V 1.6 8 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 30 VDS = 30 V 6 4 2 VGS = 10 V, ID = 19.8 A 1.4 1.2 1.0 0.8 0 0 10 20 30 40 Qg - Total Gate Charge (nC) Gate Charge Document Number: 68641 S09-1337-Rev. B, 13-Jul-09 50 60 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product SiE816DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.020 1 0.0 TJ = 25 °C TJ = 150 °C 10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 19.8 A 0.015 TJ = 125 °C 0.010 TJ = 25 °C 0.005 0.000 0.2 0.4 0.6 0.8 1.0 4 1.2 5 VSD - Source-to-Drain Voltage (V) 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 4.4 50 4.0 40 ID = 250 µA Power (W) V GS(th) (V) 3.6 3.2 30 20 2.8 10 2.4 2.0 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 TJ - Temperature (°C) 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 100 µs Limited by RDS(on)* I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 0.1 10 s BVDSS Limited TA = 25 °C Single Pulse 0.01 0.01 0.1 1 DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 68641 S09-1337-Rev. B, 13-Jul-09 New Product SiE816DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 140 120 120 Power Dissipation (W) I D - Drain Current (A) 100 80 Package Limited 60 40 20 100 80 60 40 20 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating, Junction-to-Case 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68641 S09-1337-Rev. B, 13-Jul-09 www.vishay.com 5 New Product SiE816DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 55 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68641. www.vishay.com 6 Document Number: 68641 S09-1337-Rev. 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