SQJQ131EL-T1_GE3

SQJQ131EL www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 °C MOSFET FEATURES PowerPAK K® 8 x 8L • AEC-Q101 qualified • 100 % Rg and UIS tested • Thin 1.6 mm package D • Very low thermal resistance S 8 m m S S G 1 7.9 S 4 mm Top View S 3 S 2 G 1 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S Bottom View G PRODUCT SUMMARY VDS (V) -30 RDS(on) (Ω) at VGS = -10 V 0.0014 ID (A) Configuration Package D P-Channel MOSFET -280 Single PowerPAK 8 x 8L ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS -30 Gate-source voltage VGS ±20 Continuous drain current TC = 25 °C TC = 125 °C Continuous source current (diode conduction) Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID -280 IS 545 -280 IAS 63 EAS 198 TJ, Tstg Soldering recommendations (peak temperature) d V -280 IDM PD UNIT 600 200 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c SYMBOL LIMIT RthJA 44 RthJC 0.25 UNIT °C/W Notes a. Package limited b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection S21-0235-Rev. A, 15-Mar-2021 Document Number: 77936 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ131EL www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a VDS VGS = 0, ID = 250 μA -30 - - VGS(th) VDS = VGS, ID = 250 μA -1.5 -2 -2.5 VDS = 0 V, VGS = ± 20 V IGSS IDSS ID(on) - - ± 100 VGS = 0 V VDS = -30 V - - 1 VGS = 0 V VDS = -30 V, TJ = 125 °C - - 200 VGS = 0 V VDS = -30 V, TJ = 175 °C - - 330 VGS = -10 V VGS = -4.5 V Drain-source on-state resistance a Forward transconductance b RDS(on) gfs -100 - - VDS ≥ -5 V, ID = -8 A - 0.0015 0.0022 VGS = -10 V ID = -10 A - 0.0010 0.0014 VGS = -10 V ID = -10 A, TJ = 125 °C - - 0.0019 VGS = -10 V ID = -10 A, TJ = 175 °C VDS = -15 V, ID = -50 A - - 0.0022 - 180 - V nA μA A Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c VDS = 15 V, f = 1 MHz VGS = 10 V Rg VDS = -15 V, ID = -30 A f = 1 MHz td(on) VDD = -15 V, RL = 0.5 Ω ID ≅ -30 A, VGEN = -10 V, Rg = 1 Ω tr td(off) tf Source-Drain Diode Ratings and Characteristics Reverse recovery time VGS = 0 V - 23 588 33 050 - 2443 3420 - 2267 3174 - 487 731 - 86 - - 82 - 1 2.1 3.2 - 20 30 - 30 45 - 194 291 - 78 117 pF nC Ω ns b ta 20 - - tb 24 - - - 43 86 trr VDD = -24 V, IFM = -20 A, di/dt = 100 A/μs ns Reverse recovery charge Qrr - 45 90 Reverse recovery current IRM - - 1.9 A Pulsed current a ISM - - 1100 A Forward voltage VSD - -0.8 -1.1 V IF = -50 A, VGS = 0 nC Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-0235-Rev. A, 15-Mar-2021 Document Number: 77936 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ131EL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 10000 350 100 000 10000 VGS = 10 V thru 4 V 140 100 VGS = 3 V 1000 1st line 2nd line 1000 210 2nd line C - Capacitance (pF) Ciss 1st line 2nd line 10 000 100 Coss 70 Crss 10 0 0 2 4 6 8 10 1000 0 10 6 12 24 VDS - Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Capacitance Axis Title 30 Axis Title 10000 200 1000 1st line 2nd line 150 TC = 25 °C 100 TC = 125 °C 10000 0.005 100 50 2nd line RDS(on) - On-Resistance (Ω) 250 2nd line ID - Drain Current (A) 18 0.004 1000 0.003 1st line 2nd line 2nd line ID - Drain Current (A) 280 VGS = 4.5 V 0.002 100 0.001 VGS = 10 V TC = -55 °C 10 0 0 2 4 6 8 10 0 10 0 20 40 ID - Drain Current (A) Transfer Characteristics On-Resistance vs. Drain Current 10000 1st line 2nd line TC = 125 °C 120 100 60 10 0 20 40 60 80 100 ID = 30 A VDS = 15 V 8 1000 6 1st line 2nd line 1000 2nd line VGS - Gate-to-Source Voltage (V) TC = -55 °C 180 10000 10 TC = 25 °C 240 4 100 2 10 0 0 100 200 300 400 ID - Drain Current (A) Qg - Total Gate Charge (nC) Transconductance Gate Charge S21-0235-Rev. A, 15-Mar-2021 100 Axis Title Axis Title 2nd line gfs - Transconductance (S) 80 VGS - Gate-to-Source Voltage (V) 300 0 60 500 Document Number: 77936 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ131EL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 10000 10000 0.010 VGS = 4.5 V 1.0 100 0.8 0.008 1000 0.006 1st line 2nd line 1000 1.2 2nd line RDS(on) - On-Resistance (Ω) VGS = 10 V ID = 20 A 1.4 1st line 2nd line 0.004 100 TJ = 150 °C 0.002 TJ = 25 °C 10 0.6 -50 -25 0 25 50 10 0.000 75 100 125 150 175 0 4 6 8 10 TJ - Junction Temperature (°C) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Axis Title 10000 -32 1000 IDM limited Axis Title 10000 ID = 1 mA -34 10 ms 1000 -36 -38 100 -40 2nd line ID - Drain Current (A) 100 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 2 100 ms Limited by RDS(on) a 1 100 BVDSS limited 0.1 10 -42 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 1000 1 s, 10 s, DC 10 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 1.6 0.01 0.01 TC = 25 °C, single pulse 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Drain Source Breakdown vs. Junction Temperature Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified 2nd line IS - Source Current (A) 100 10 TJ = 150 °C 1 0.1 TJ = 25 °C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Source Drain Diode Forward Voltage S21-0235-Rev. A, 15-Mar-2021 Document Number: 77936 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ131EL www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 10000 1.5 ID = 250 μA 1000 0.7 1st line 2nd line 2nd line VGS(th) - Variance (V) 1.1 ID = 5 mA 0.3 100 -0.1 10 -0.5 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Threshold Voltage Axis Title 10000 Duty cycle = 0.5 0.2 0.1 0.1 1000 0.05 0.01 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.02 100 0.001 Single pulse 0.0001 0.0001 0.001 0.01 0.1 1 10 10 1000 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty cycle = 0.5 0.2 0.1 1000 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.05 0.02 100 0.01 Single pulse 0.001 0.0001 10 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77936. S21-0235-Rev. A, 15-Mar-2021 Document Number: 77936 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® 8 x 8L BWL Case Outline 2 c D2 E3 D5 E4 W4 D6 E2 D6 W1 D5 E5 b2 E1 E z1 b e b1 z2 L1 L A2 A1 0.25 gauge line D1 ȧ Bottom view (single) A Top view (single) DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. A 1.50 1.60 1.70 0.059 0.063 MAX. 0.067 A1 0.00 - 0.127 0.000 - 0.005 A2 0.655 0.705 0.755 0.026 0.028 0.030 b 0.92 1.00 1.08 0.036 0.039 0.043 b1 1.02 1.10 1.18 0.040 0.043 0.046 b2 6.84 6.94 7.04 0.269 0.273 0.277 c 0.20 0.25 0.30 0.008 0.010 0.012 D1 7.80 7.90 8.00 0.307 0.311 0.315 D2 6.70 6.80 6.90 0.264 0.268 0.272 D5 0.37 0.47 0.57 0.015 0.019 0.022 D6 2.49 2.59 2.69 0.098 0.102 0.106 e 1.97 2.00 2.03 0.078 0.079 0.080 E 7.90 8.00 8.10 0.311 0.315 0.319 E1 6.12 6.22 6.32 0.241 0.245 0.249 E2 4.21 4.31 4.41 0.166 0.170 0.174 E3 4.92 5.02 5.12 0.194 0.198 0.202 E4 3.80 3.90 4.00 0.150 0.154 0.157 E5 0.65 0.75 0.85 0.026 0.030 0.033 L 0.61 0.68 0.75 0.024 0.027 0.030 L1 1.00 1.07 1.15 0.039 0.042 0.045 W1 0.30 0.40 0.50 0.012 0.016 0.020 W4 0.32 0.37 0.42 0.013 0.015 0.017 z1 0.45 0.55 0.65 0.018 0.022 0.026 z2 1.81 1.91 2.01 0.071 0.075 0.079  0° - 5° 0° - 5° ECN: S19-0643-Rev. B, 05-Aug-2019 DWG: 6073 Note • Millimeter will govern Revison: 05-Aug-2019 Document Number: 79736 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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