SQS415ENW-T1_GE3

SQS415ENW www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 °C MOSFET FEATURES PowerPAK® 1212-8W Single D 5 3. D 6 D 7 • TrenchFET® power MOSFET D 8 • AEC-Q101 qualified d • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3 m m 1 3.3 mm Top View 4 G Bottom View 3 S 2 S 1 S S Marking code: Q036 G PRODUCT SUMMARY VDS (V) -40 RDS(on) () at VGS = -10 V 0.0161 RDS(on) () at VGS = -4.5 V 0.0230 ID (A) Configuration Package -16 D Single P-Channel MOSFET PowerPAK 1212-8W ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS -40 Gate-source voltage VGS ± 20 Continuous drain current a TC = 25 °C TC = 125 °C Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID -16 -16 IDM -64 IAS -25 EAS 31.2 TJ, Tstg Soldering recommendations (peak temperature) e, f V -16 IS PD UNIT 62.5 20 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) SYMBOL PCB mount c LIMIT RthJA 81 RthJC 2.4 UNIT °C/W Notes a. Package limited b. Pulse test; pulse width  300 μs, duty cycle  2 % c. When mounted on 1" square PCB (FR4 material) d. Parametric verification ongoing e. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8W is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S19-1112-Rev. C, 18-Dec-2019 Document Number: 77427 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS415ENW www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance b Forward transconductance b VDS VGS = 0 V, ID = -250 μA -40 - - VGS(th) VDS = VGS, ID = -250 μA -1.5 -2.0 -2.5 VDS = 0 V, VGS = ± 20 V IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = -40 V - - -1 VGS = 0 V VDS = -40 V, TJ = 125 °C - - -50 VGS = 0 V VDS = -40 V, TJ = 175 °C - - -150 VGS = -10 V VDS  -5 V -20 - - VGS = -10 V ID = -12 A - 0.0130 0.0161 VGS = -10 V ID = -12 A, TJ = 125 °C - - 0.0240 VGS = -10 V ID = -12 A, TJ = 175 °C - - 0.0270 VGS = -4.5 V ID = -9 A - 0.0177 0.0230 - 30 - - 3710 4825 - 242 315 - 228 297 VDS = -15 V, ID = -7 A V nA μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c Source-Drain Diode Ratings and Rg VGS = 0 V VGS = -10 V VDS = -25 V, f = 1 MHz VDS = -20 V, ID = -2.5 A f = 1 MHz td(on) tr td(off) VDD = -20 V, RL = 8  ID  -2.5 A, VGEN = -10 V, Rg = 1  tf - 63 82 - 9 12 - 12 15.5 2.8 4.6 7.5 - 11.8 15.3 - 3.6 4.7 - 64 83 - 16 21.2 pF nC  ns Characteristics b Pulsed current a ISM Forward voltage VSD IF = -8.8 A, VGS = 0 V - - -64 A - -0.8 -1.2 V Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-1112-Rev. C, 18-Dec-2019 Document Number: 77427 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS415ENW www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 80 VGS = -4 V 40 100 1000 48 1st line 2nd line 1000 60 2nd line ID - Drain Current (A) 64 VGS = -5 V thru -10 V 1st line 2nd line 2nd line ID - Drain Current (A) 10000 80 32 16 20 TC = 125 °C VGS = -3 V 0 1 2 3 4 2 6 8 VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 0.080 60 48 1st line 2nd line 1000 36 TC = 25 °C 24 100 12 TC = 125 °C 2nd line RDS(on) - On-Resistance (Ω) 10000 2 3 4 5 0.040 VGS = -4.5 V 0.020 0.000 10 1 0.060 VGS = -10 V TC = -55 °C 0 0 6 20 10 1000 1st line 2nd line 42 TC = 125 °C 28 100 14 0 10 30 40 50 10000 ID = 2.5 A VDS = 20 V 8 1000 6 1st line 2nd line TC = -55 °C 56 2nd line VGS - Gate-to-Source Voltage (V) 10000 20 4 100 2 0 10 0 16 32 48 64 ID - Drain Current (A) 2nd line Qg - Total Gate Charge (nC) 2nd line Transconductance Capacitance S19-1112-Rev. C, 18-Dec-2019 80 Axis Title Axis Title 70 10 60 On-Resistance vs. Drain Current Transfer Characteristics TC = 25 °C 40 ID - Drain Current (A) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line 0 4 VDS - Drain-to-Source Voltage (V) 2nd line Axis Title 2nd line ID - Drain Current (A) 10 0 5 72 0 TC = -55 °C 0 10 0 2nd line gfs - Transconductance (S) 100 TC = 25 °C 80 Document Number: 77427 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS415ENW www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 10000 10000 100 Coss 100 Crss 100 8 16 24 32 TJ = 150 °C 1 100 0.1 40 TJ = 25 °C 10 0 0.3 0.6 1.2 1.5 VSD - Source-to-Drain Voltage (V) 2nd line Capacitance Source Drain Diode Forward Voltage Axis Title 0.6 10000 ID = -10 A 0.3 VGS = -10 V 1000 1st line 2nd line 1.4 VGS = -4.5 V 1.1 100 2nd line VGS(th) Variance (V) 1.7 0 ID = -5 mA -0.3 -0.6 ID = -250 μA -0.9 0.8 0.5 -1.2 10 0 25 50 -50 -25 75 100 125 150 175 0 25 TJ - Junction Temperature (°C) 2nd line Axis Title Axis Title 54 0.045 1st line 2nd line 1000 0.030 TJ = 125 °C 100 0.015 TJ = 25 °C 0.000 10 4 6 8 10 VGS - Gate-to-Source Voltage (V) 2nd line On-Resistance vs. Gate-to-Source Voltage S19-1112-Rev. C, 18-Dec-2019 2nd line VDS - Drain-to-Source Voltage (V) 10000 0.060 2 75 100 125 150 175 Threshold Voltage On-Resistance vs. Junction Temperature 0 50 TJ - Temperature (°C) 2nd line 9001 ID = -1 mA 8002 52 7003 50 6004 5005 48 4006 1st line 2nd line -50 -25 2nd line RDS(on) - On-Resistance (Ω) 0.9 VDS - Drain-to-Source Voltage (V) 2nd line 2.0 2nd line RDS(on) - On-Resistance (Normalized) 1000 0.01 10 0 10 1st line 2nd line 1000 2nd line IS - Source Current (A) 1000 1st line 2nd line 2nd line C - Capacitance (pF) Ciss 3007 46 2008 1009 44 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 2nd line Drain Source Breakdown vs. Junction Temperature Document Number: 77427 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS415ENW www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 10000 100 1000 1st line 2nd line 2nd line ID - Drain Current (A) IDM limited 10 100 μs 1 1 ms 100 Limited by RDS(on) (1) 10 ms 0.1 100 ms 1 s, 10 s, DC TC = 25 °C Single pulse 0.01 0.01 (1) BVDSS limited 0.1 1 10 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 0.05 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 81 °C/W 0.02 3. TJM - TA = PDMZthJA (t) Single pulse 4. Surface mounted 0.01 10-4 -3 10 -2 10 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S19-1112-Rev. C, 18-Dec-2019 Document Number: 77427 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS415ENW www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77427. S19-1112-Rev. C, 18-Dec-2019 Document Number: 77427 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® 1212-8W Case Outline E2 E4 H L K 1 Z 2 4 5 3 4 b 6 θ 3 D5 2 D2 2 7 D1 D 8 e 1 M θ D4 A2 W L1 θ E3 Backside view of single pad θ c A A1 2 E1 E DIM. Detail Z Notes 1 Inch will govern 2 Dimensions exclusive of mold gate burrs 3 Dimensions exclusive of mold flash and cutting burrs MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.97 1.04 1.12 0.038 0.041 0.044 A1 0 - 0.05 0 - 0.002 A2 0 - 0.13 0 - 0.005 b 0.23 0.30 0.41 0.009 0.012 0.016 c 0.23 0.28 0.33 0.009 0.011 0.013 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.95 3.05 3.15 0.116 0.120 0.124 D2 1.98 2.11 2.24 0.078 0.083 0.088 D4 0.47 typ. D5 2.3 typ. 0.0185 typ. 0.090 typ. E 3.20 3.30 3.40 0.126 0.130 0.134 E1 2.95 3.05 3.15 0.116 0.120 0.124 E2 1.47 1.60 1.73 0.058 0.063 0.068 E3 1.75 1.85 1.98 0.069 0.073 0.078 E4 0.34 typ. 0.013 typ. e 0.65 BSC. 0.026 BSC K 0.86 typ. 0.034 typ. H 0.30 0.41 0.51 0.012 0.016 0.020 L 0.30 0.43 0.56 0.012 0.017 0.022 L1 0.06 0.13 0.20 0.002 0.005 0.008  0° - 12° 0° - 12° W 0.15 0.25 0.36 0.006 0.010 0.014 M 0.125 typ. 0.005 typ. ECN: C15-1530-Rev. B, 16-Nov-15 DWG: 6032 Revision: 16-Nov-15 Document Number: 64614 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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