SUD19N20-90-E3

SUD19N20-90 Vishay Siliconix N-Channel 200 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.090 at VGS = 10 V 19 0.105 at VGS = 6 V 17.5 • • • • • TrenchFET® Power MOSFET 175 °C Junction Temperature PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch TO-252 D G Drain Connected to Tab G D S Top View S Ordering Information: N-Channel MOSFET SUD19N20-90-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °C V 19 ID 11 IDM 40 IS 19 IAS 19 EAS 18 A mJ 136b PD W 3a TJ, Tstg Operating Junction and Storage Temperature Range Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta Junction-to-Case (Drain) Symbol t  10 s Steady State RthJA RthJC Typical Maximum 15 18 40 50 0.85 1.1 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. See SOA curve for voltage derating. Document Number: 71767 S10-2245-Rev. E, 04-Oct-10 www.vishay.com 1 SUD19N20-90 Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 200 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VDS = 0 V, VGS = ± 20 V Typ.a Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb IDSS ± 100 VDS = 200 V, VGS = 0 V 1 VDS = 200 V, VGS = 0 V, TJ = 125 °C 50 VDS = 200 V, VGS = 0 V, TJ = 175 °C 250 ID(on) VDS =5 V, VGS = 10 V 40 VGS = 10 V, ID = 5 A Drain-Source On-State Resistanceb Forward Transconductanceb 4 RDS(on) gfs V nA µA A 0.075 0.090 VGS = 10 V, ID = 5 A, TJ = 125 °C 0.190 VGS = 10 V, ID = 5 A, TJ = 175 °C 0.260 VGS = 6 V, ID = 5 A 0.082 VDS = 15 V, ID = 19 A 35  0.105 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c Gate-Drain Charge Qgd Gate Resistance Rg Timec td(on) Turn-Off Delay Timec td(off) Turn-On Delay Rise Timec 1800 VGS = 0 V, VDS = 25 V, F = 1 MHz pF 80 34 VDS = 100 V, VGS = 10 V, ID = 19 A tr Fall Timec 180 51 nC 8 12 0.5 VDD = 100 V, RL = 5.2  ID  19 A, VGEN = 10 V, Rg = 2.5  tf 2.9 15 25 50 75 30 45 60 90  ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C) ISM Pulsed Current Diode Forward Voltage b Source-Drain Reverse Recovery Time 50 A VSD IF = 19 A, VGS = 0 V 0.9 1.5 V trr IF = 19 A, dI/dt = 100 A/µs 180 250 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71767 S10-2245-Rev. E, 04-Oct-10 SUD19N20-90 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 40 VGS = 10 V thru 7 V 6V 30 I D - Drain Current (A) I D - Drain Current (A) 30 20 5V 10 20 TC = 125 °C 10 25 °C - 55 °C 4V 0 0 0 2 4 6 8 0 10 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 70 6 0.20 R DS(on) - On-Resistance () TC = - 55 °C 60 g fs - Transconductance (S) 1 50 25 °C 40 125 °C 30 20 0.15 VGS = 6 V 0.10 VGS = 10 V 0.05 10 0.00 0 0 10 20 30 0 40 20 30 40 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 2500 VGS - Gate-to-Source Voltage (V) 20 2000 C - Capacitance (pF) 10 Ciss 1500 1000 500 Crss VDS = 100 V ID = 19 A 16 12 8 4 Coss 0 0 0 40 80 120 160 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 71767 S10-2245-Rev. E, 04-Oct-10 200 0 10 20 30 40 50 60 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 SUD19N20-90 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3.0 100 VGS = 10 V ID = 5 A I S - Source Current (A) (Normalized) R DS(on) - On-Resistance 2.5 2.0 1.5 1.0 TJ = 150 °C 10 TJ = 25 °C 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 1 175 0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature ( °C) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage THERMAL RATINGS 100 25 100 µs ID - Drain Current (A) I D - Drain Current (A) 10 µs Limited by R DS(on)* 20 15 10 10 1 ms 10 ms 1 100 ms 1 s, DC TC = 25 °C Single Pulse 5 0 0 25 50 75 100 125 TC - Case Temperature (°C) 150 175 0.1 0.1 Maximum Avalanche Drain Current vs. Case Temperature 1 10 1000 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 30 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71767. www.vishay.com 4 Document Number: 71767 S10-2245-Rev. E, 04-Oct-10 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline VERSION 1: FACILITY CODE = Y E A C2 H D D1 L3 b3 e b2 e1 L gage plane height (0.5 mm) L4 b L5 E1 C A1 MILLIMETERS DIM. MIN. A 2.18 MAX. 2.38 A1 - 0.127 b 0.64 0.88 b2 0.76 1.14 b3 4.95 5.46 C 0.46 0.61 C2 0.46 0.89 D 5.97 6.22 D1 4.10 - E 6.35 6.73 E1 4.32 - H 9.40 10.41 e 2.28 BSC e1 4.56 BSC L 1.40 1.78 L3 0.89 1.27 L4 - 1.02 L5 1.01 1.52 Note • Dimension L3 is for reference only Revision: 16-Dec-2019 Document Number: 71197 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix VERSION 2: FACILITY CODE = N E e A b3 E1 E1/2 c2 θ e L4 L5 L6 H D L3 D1 θ 0.25 (3°) DETAIL "B" C A B (3°) DETAIL "B" A1 C L (L1) b1 SEATING C PLANE θ L2 GAUGE PLANE H C (b) c1 3x b 2x e c 2x b2 MILLIMETERS MILLIMETERS DIM. A MIN. 2.18 MAX. DIM. MIN. 2.39 L 1.50 A1 - 0.13 L1 b 0.65 0.89 L2 MAX. 1.78 2.74 ref. 0.51 BSC b1 0.64 0.79 L3 b2 0.76 1.13 L4 - 1.02 b3 4.95 5.46 L5 1.14 1.49 c 0.46 0.61 L6 0.65 0.85 c1 0.41 0.56  0° 10° 1 0° 15° 2 25° 35° c2 0.46 0.60 D 5.97 6.22 D1 5.21 - E 6.35 6.73 E1 4.32 e H 2.29 BSC 9.94 0.89 1.27 Notes • Dimensioning and tolerance confirm to ASME Y14.5M-1994 • All dimensions are in millimeters. Angles are in degrees • Heat sink side flash is max. 0.8 mm • Radius on terminal is optional 10.34 ECN: E19-0649-Rev. Q, 16-Dec-2019 DWG: 5347 Revision: 16-Dec-2019 Document Number: 71197 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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