SUD19N20-90-E3

SUD19N20-90 Vishay Siliconix N-Channel 200-V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) 200 rDS(on) (Ω) 0.090 at VGS = 10 V 0.105 at VGS = 6 V ID (A) 19 17.5 FEATURES • • • • TrenchFET® Power MOSFET 175 °C Junction Temperature PWM Optimized 100 % Rg Tested Available RoHS* COMPLIANT APPLICATIONS • Primary Side Switch TO-252 D Drain Connected to Tab G D S G Top View Ordering Information: SUD19N20-90 SUD19N20-90-E3 (Lead (Pb)-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TA = 25 °C TC = 25 °C TC = 125 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 200 ± 20 19 11 40 19 19 18 136b 3a - 55 to 175 mJ W °C A Unit V THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta Junction-to-Case (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 Board. b. See SOA curve for voltage derating. t ≤ 10 sec Steady State Symbol RthJA RthJC Typical 15 40 0.85 Maximum 18 50 1.1 °C/W Unit *Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 71767 S-60772-Rev. D, 08-May-06 www.vishay.com 1 SUD19N20-90 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 200 V, VGS = 0 V VDS = 200 V, VGS = 0 V, TJ = 125 °C VDS = 200 V, VGS = 0 V, TJ = 175 °C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 5 A Drain-Source On-State Resistanceb rDS(on) VGS = 10 V, ID = 5 A, TJ = 125 °C VGS = 10 V, ID = 5 A, TJ = 175 °C VGS = 6 V, ID = 5 A Forward Transconductanceb gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr c Symbol Test Conditions Min 200 2 Typa Max Unit 4 ± 100 1 50 250 V nA µA A 40 0.075 0.090 0.190 0.260 0.082 35 1800 0.105 Ω VDS = 15 V, ID = 19 A S Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Charge Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Time Fall Timec Pulsed Current Diode Forward Voltage b c VGS = 0 V, VDS = 25 V, F = 1 MHz 180 80 34 42 pF VDS = 100 V, VGS = 10 V, ID = 19 A 0.5 8 12 2.9 15 25 75 45 90 50 50 30 60 nC Ω td(off) tf ISM VSD trr VDD = 100 V, RL = 5.2 Ω ID ≅ 19 A, VGEN = 10 V, Rg = 2.5 Ω ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C) A V ns IF = 19 A, VGS = 0 V IF = 19 A, di/dt = 100 A/µs 0.9 180 1.5 250 Source-Drain Reverse Recovery Time Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71767 S-60772-Rev. D, 08-May-06 SUD19N20-90 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 40 VGS = 10 thru 7 V 6V 30 I D - Drain Current (A) 40 30 I D - Drain Current (A) 20 20 TC = 125 °C 10 25 °C 5V 10 4V 0 0 2 4 6 8 10 0 0 1 2 3 4 5 - 55 °C 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 70 60 g fs - Transconductance (S) 50 25 °C 40 125 °C 30 20 10 0 0 10 20 ID - Drain Current (A) 30 40 TC = - 55 °C rDS(on) - On-Resistance (Ω) 0.15 0.20 Transfer Characteristics 0.10 VGS = 6 V VGS = 10 V 0.05 0.00 0 10 20 ID - Drain Current (A) 30 40 Transconductance 2500 20 On-Resistance vs. Drain Current 2000 C - Capacitance (pF) Ciss 1500 V GS - Gate-to-Source Voltage (V) 16 VDS = 100 V ID = 19 A 12 1000 8 500 Crss 4 Coss 0 0 40 80 120 160 200 0 0 10 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Document Number: 71767 S-60772-Rev. D, 08-May-06 Gate Charge www.vishay.com 3 SUD19N20-90 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 3.0 VGS = 10 V ID = 5 A I S - Source Current (A) 100 2.5 rDS(on) - On-Resistance (Normalized) 2.0 TJ = 150 °C 10 1.5 1.0 TJ = 25 °C 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature ( °C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage THERMAL RATINGS 25 100 20 I D - Drain Current (A) I D - Drain Current (A) 10 Limited by rDS(on) 10 µs 100 µs 15 1 ms 1 TC = 25 °C Single Pulse 10 10 ms 100 ms 1 s, dc 5 0 0 25 50 75 100 125 TC - Case Temperature (°C) 150 175 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) 1000 Maximum Avalanche Drain Current vs. Case Temperature 2 1 Normalized Effective Transient Thermal Impedance Safe Operating Area Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 30 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71767. www.vishay.com 4 Document Number: 71767 S-60772-Rev. D, 08-May-06 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1