SUD19P06-60-BE3

SUD19P06-60 Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 ID (A)d RDS(on) () 0.060 at VGS = - 10 V - 19 0.077 at VGS = - 4.5 V - 16.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % UIS Tested Qg (Typ) 26 • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • High Side Switch for Full Bridge Converter • DC/DC Converter for LCD Display TO-252 S G Drain Connected to Tab G D S Top View D P-Channel MOSFET Ordering Information: SUD19P06-60-E3 (Lead (Pb)-free) SUD19P06-60-GE3 (Lead (Pb)-free and Halogen free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise note) Parameter Symbol Limit Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 125 °C Avalanche Current, Single Pulse Repetitive Avalanche Energy, Single Pulsea Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °C - 8.19 A - 30 IAS - 22 EAS 24.2 38.5 PD mJ c W 2.3b, c TJ, Tstg Operating Junction and Storage Temperature Range V - 18.3 ID IDM Pulsed Drain Current Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case Notes: a. Duty cycle 1 %. b. When mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Based up on TC = 25 °C. Document Number: 69253 S11-2132 Rev. B, 31-Oct-11 Symbol t  10 s Steady State RthJA RthJC Typical Maximum Unit 17 45 2.7 21 55 3.25 °C/W www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD19P06-60 Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise note) Parameter Symbol Test Conditions Min . Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage VDS VGS = 0 V, ID = - 250 µA - 60 VGS(th) VDS = VGS, ID = - 250 µA -1 IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) V -3 V VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = - 60 V, VGS = 0 V -1 VDS = - 60 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 60 V, VGS = 0 V, TJ = 150 ° C VDS  - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 10 A Drain-Source On-State Resistancea a Forward Transconductance RDS(on) - 125 - 30 A 0.048 0.060 VGS = - 10 V, ID = - 10 A, TJ = 125 °C 0.102 VGS = - 10 V, ID = - 10 A, TJ = 150 °C 0.120 gfs µA VGS = - 4.5 V, ID = - 5 A 0.061 VDS = - 15 V, ID = - 10 A 22  0.077 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 90 Total Gate Chargec Qg 26 c Gate-Source Charge Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Time Fall Timec VDS = - 30 V, VGS = - 10 V, ID = - 10 A td(off) f = 1 MHz VDD = - 30 V, RL = 3  ID  - 19 A, VGEN = - 10 V, Rg = 2.5  tf Drain-Source Body Diode and Characteristics (TC = 25 1710 pF 130 40 nC 4.5 7 td(on) tr c 1140 VGS = 0 V, VDS = - 25 V, f = 1 MHz  7 8 15 9 15 65 100 30 45 ns °C)b IS - 30 Pulsed Current ISM - 30 Forward Voltagea VSD IF = - 19 A, VGS = 0 V -1 - 1.5 V trr IF = - 19 A, di/dt = 100 A/µs 41 61 ns Continuous Current Reverse Recovery Time A Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69253 S11-2132 Rev. B, 31-Oct-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD19P06-60 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 30 30 VGS = 10 thru 5 V 4V 25 ID - Drain Current (A) ID - Drain Current (A) 25 20 15 10 3V 5 20 15 10 TC = 125 °C 5 25 °C - 55 °C 0 0 2 4 6 8 0 0.0 10 0.5 1.0 VDS - Drain-to-Source Voltage (V) Output Characteristics 2.5 3.0 3.5 4.0 4.5 0.12 TC = - 55 °C 0.10 RDS(on) - On-Resistance (Ω) 30 g fs - Transconductance (S) 2.0 Transfer Characteristics 35 25 °C 25 125 °C 20 15 10 5 0 0.08 VGS = 4.5 V 0.06 VGS = 10 V 0.04 0.02 0.00 0 5 10 15 20 25 0 30 5 10 15 20 25 30 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 1800 20 V GS - Gate-to-Source Voltage (V) 1500 C - Capacitance (pF) 1.5 VGS - Gate-to-Source Voltage (V) Ciss 1200 900 600 300 Coss Crss 0 0 VDS = 30 V ID = 10 A 16 12 8 4 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 69253 S11-2132 Rev. B, 31-Oct-11 50 60 0 10 20 30 40 50 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD19P06-60 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 ID = 10 A I S - Source Current (A) RDS(on) - On-Resistance (normalized) 1.9 VGS = 10 V 1.6 1.3 1.0 10 TJ = 150 °C TJ = 25 °C 0.7 1 0.4 - 50 - 25 0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage THERMAL RATINGS 25 100 Limited by rDS(on)* 100 ms 10 I D - Drain Current (A) I D - Drain Current (A) 20 15 10 5 1s DC 0.1 BVDSS Limited 0.01 0 0 25 50 75 100 125 150 10 s 1 TC = 25 °C Single Pulse 0.001 0.1 TC - Case Temperature (°C) * VGS Maximum Drain Current vs. Case Temperature 1 10 100 1000 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 69253 S11-2132 Rev. B, 31-Oct-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD19P06-60 Vishay Siliconix THERMAL RATINGS 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10- 2 10 -1 1 10 100 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69253. Document Number: 69253 S11-2132 Rev. B, 31-Oct-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline VERSION 1: FACILITY CODE = Y E A C2 H D D1 L3 b3 e b2 e1 L gage plane height (0.5 mm) L4 b L5 E1 C A1 MILLIMETERS DIM. MIN. A 2.18 MAX. 2.38 A1 - 0.127 b 0.64 0.88 b2 0.76 1.14 b3 4.95 5.46 C 0.46 0.61 C2 0.46 0.89 D 5.97 6.22 D1 4.10 - E 6.35 6.73 E1 4.32 - H 9.40 10.41 e 2.28 BSC e1 4.56 BSC L 1.40 1.78 L3 0.89 1.27 L4 - 1.02 L5 1.01 1.52 Note • Dimension L3 is for reference only Revision: 03-Oct-2022 Document Number: 71197 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix VERSION 2: FACILITY CODE = N E e A b3 E1 E1/2 c2 θ e L4 L5 L6 H D L3 D1 θ 0.25 (3°) DETAIL "B" C A B (3°) DETAIL "B" A1 C L (L1) b1 SEATING C PLANE θ L2 GAUGE PLANE H C (b) c1 3x b 2x e c 2x b2 MILLIMETERS MILLIMETERS DIM. A MIN. 2.18 MAX. DIM. MIN. 2.39 L 1.50 A1 - 0.13 L1 b 0.65 0.89 L2 MAX. 1.78 2.74 ref. 0.51 BSC b1 0.64 0.79 L3 b2 0.76 1.13 L4 - 1.02 b3 4.95 5.46 L5 1.14 1.49 c 0.46 0.61 L6 0.65 0.85 c1 0.41 0.56  0° 10° 1 0° 15° 2 25° 35° c2 0.46 0.60 D 5.97 6.22 D1 5.21 - E 6.35 6.73 E1 4.32 e H 2.29 BSC 9.94 0.89 1.27 Notes • Dimensioning and tolerance confirm to ASME Y14.5M-1994 • All dimensions are in millimeters. Angles are in degrees • Heat sink side flash is max. 0.8 mm • Radius on terminal is optional 10.34      ECN: E22-0399-Rev. R, 03-Oct-2022 DWG: 5347 Revision: 03-Oct-2022 Document Number: 71197 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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