SUM60N02-3M9P-E3

SUM60N02-3m9P Vishay Siliconix N-Channel 20-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0039 at VGS = 10 V 60 0.0052 at VGS = 4.5 V 60 V(BR)DSS (V) 20 TrenchFET® Power MOSFET 175 °C Junction Temperature 100 % Rg Tested 100 % UIS Tested • • • • RoHS COMPLIANT APPLICATIONS • OR-ing D TO-263 G DRAIN connected to TAB G D S Top View S Ordering Information: SUM60N02-3m9P-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 100 °C ID IDM Pulsed Drain Current Single Pulse Avalanche Current L = 0.1 mH Single Pulse Avalanche Energy TC = 25 °C Maximum Power Dissipationb TA = 25 Operating Junction and Storage Temperature Range °Cd Unit V 60a 60a 120 IAS 50 EAS 125 A mJ c PD 120 3.75 W TJ, Tstg - 55 to 175 °C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) d Junction-to-Case RthJA 40 RthJC 1.25 °C/W Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 69820 S-80183-Rev. A, 04-Feb-08 www.vishay.com 1 SUM60N02-3m9P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. V(BR)DSS VDS = 0 V, ID = 250 µA 20 VGS(th) VDS = VGS, ID = 250 µA 1.0 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) ± 100 VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 125 °C 50 VDS = 20 V, VGS = 0 V, TJ = 175 °C 250 VDS ≥ 5 V, VGS = 10 V 100 VGS = 10 V, ID = 20 A Drain-Source On-State Resistancea a Forward Transconductance rDS(on) gfs 3 V nA µA A 0.0031 0.0039 VGS = 10 V, ID = 20 A, TJ = 125 °C 0.0059 VGS = 10 V, ID = 20 A, TJ = 175 °C 0.007 VGS = 4.5 V, ID = 20 A 0.0042 VDS = 10 V, ID = 20 A 95 Ω 0.0052 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargeb Qg b Gate-Source Charge Qgs Gate-Drain Chargeb Qgd b Rise Timeb Turn-Off Delay Time 33 VDS = 10 V, VGS = 4.5 V, ID = 50 A b Fall Timeb td(off) 50 nC 18 7 0.75 td(on) tr pF 985 365 Rg Gate Resistance Turn-On Delay Time 5950 VGS = 0 V, VDS = 10 V, f = 1 MHz VDD = 10 V, RL = 0.2 Ω ID ≅ 50 A, VGEN = 10 V, Rg = 1.0 Ω tf 1.5 2.3 15 25 7 11 35 55 8 12 Ω ns Source-Drain Diode Ratings and Characteristics TC = 25 °Cc IS 60 Pulsed Current ISM 100 Forward Voltagea VSD Continuous Current Reverse Recovery Time IF = 20 A, VGS = 0 V trr Peak Reverse Recovery Current IRM Reverse Recovery Charge Qrr IF = 20 A, di/dt = 100 A/µs A 0.85 1.5 V 45 90 ns 1.7 3.4 A 0.039 0.155 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69820 S-80183-Rev. A, 04-Feb-08 SUM60N02-3m9P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 120 120 VGS = 4 V VGS = 10 thru 5 V 100 I D - Drain Current (A) I D - Drain Current (A) 100 80 60 40 20 80 60 TC = 25 °C 40 20 TC = 125 °C VGS = 3 V TC = - 55 °C 0 0 0 1 2 3 4 5 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 0.010 200 120 r DS(on) - On-Resistance (Ω) g fs - Transconductance (S) TC = -55 °C 160 TC = 25 °C 80 TC = 125 °C 40 0.008 0.006 VGS = 4.5 V 0.004 VGS = 10 V 0.002 0.000 0 0 10 20 30 40 0 50 20 60 80 100 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 7500 0.020 ID = 20 A Ciss 6000 0.016 C - Capacitance (pF) r DS(on) - On-Resistance (Ω) 40 ID - Drain Current (A) 0.012 0.008 TA = 125 °C 4500 3000 Coss 1500 0.004 TA = 25 °C Crss 0 0.000 0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Capacitance Document Number: 69820 S-80183-Rev. A, 04-Feb-08 18 20 www.vishay.com 3 SUM60N02-3m9P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 2.0 ID = 20 A VDS = 10 V 8 1.7 VDS = 16 V 6 4 r DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 50 A 2 VGS = 10 V 1.4 VGS = 4.5 V 1.1 0.8 0 0 20 40 60 0.5 - 50 80 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) On-Resistance vs. Junction Temperature Gate Charge 0.5 100 TJ = 150 °C 0.0 VGS(th) Variance (V) I S - Source Current (A) 10 TJ = 25 °C 1 0.1 ID = 5 mA - 0.5 ID = 250 µA - 1.0 0.01 0.001 0.0 0.2 0.4 0.6 0.8 1.0 - 1.5 - 50 1.2 - 25 0 VSD - Source-to-Drain Voltage (V) 25 50 75 100 125 150 175 TJ - Temperature (°C) Threshold Voltage Source-Drain Diode Forward Voltage 33 100 32 30 I DAV (A) Typical Drain-Source Brakdown Voltage ID = 1 mA 31 29 TJ = 25 °C TJ = 150 °C 10 28 27 26 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) Typical Drain-Source Brakdown Voltage vs. Junction Temperature www.vishay.com 4 175 1 0.00001 0.0001 0.001 0.01 0.10 1 t in (s) Single Pulse Avalanche Current vs. Time Document Number: 69820 S-80183-Rev. A, 04-Feb-08 SUM60N02-3m9P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1000 150 Limited by rDS(on)* I D - Drain Current (A) I D - Drain Current (A) 120 90 Package Limited 60 10 µs, 100 µs 100 1 ms 10 ms 10 100 ms 1 s, 10 s, DC 30 TC = 25 °C Single Pulse 0 0 25 50 75 100 125 150 175 1 0.1 1 100 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified TA - Ambient Temperature (°C) Drain Current vs. Ambient Temperature Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69820. Document Number: 69820 S-80183-Rev. A, 04-Feb-08 www.vishay.com 5 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail “A” E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000