SUM60N10-17-E3

SUM60N10-17 Vishay Siliconix N-Channel 100 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 • TrenchFET® Power MOSFETS RDS(on) () ID (A) 0.0165 at VGS = 10 V 60 0.0190 at VGS = 6 V 56 • 175 °C Junction Temperature • • • • Low Thermal Resistance Package PWM Optimized for Fast Switching 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Isolated DC/DC converters - Primary-Side Switch TO-263 D G G D S Top View S Ordering Information: SUM60N10-17-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy b Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TA = 25 °Cd Operating Junction and Storage Temperature Range ID 34a 100 IAS 40 PD V 60a IDM EAS Unit 80 150c 3.75 A mJ W TJ, Tstg - 55 to 175 °C Symbol Limit Unit RthJA 40 RthJC 1.0 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case (Drain) PCB Mount (TO-263)d °C/W Notes: a. Package limited. b. Duty cycle  1 %. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 72070 S12-0335-Rev. C, 13-Feb-12 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM60N10-17 Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ± 100 VDS = 80 V, VGS = 0 V 1 VDS = 80 V, VGS = 0 V, TJ = 125 °C 50 VDS = 80 V, VGS = 0 V, TJ = 175 °C 250 VDS 5 V, VGS = 10 V ID(on) Drain-Source On-State Resistancea 4 RDS(on) 100 0.013 0.0165 VGS = 6 V, ID = 20 A 0.015 0.019 VGS = 10 V, ID = 30 A, TJ = 125 °C Forward Transconductance gfs VDS = 15 V, ID = 30 A nA µA A VGS = 10 V, ID = 30 A 0.031 VGS = 10 V, ID = 30 A, TJ = 175 °C a V  0.041 25 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg c Gate-Source Charge Qgs Gate-Drain Chargec Qgd c Rise Timec Turn-Off Delay Time 65 VDS = 50 V, VGS = 10 V, ID = 60 A c Fall Timec td(off) 100 nC 25 19 f = 1 MHz td(on) tr pF 450 175 Rg Gate Resistance Turn-On Delay Time 4300 VGS = 0 V, VDS = 25 V, f = 1 MHz 0.3 1.5 3  15 VDD = 50 V, RL = 1.5  ID  60 A, VGEN = 10 V, RG = 2.5  tf 12 20 30 45 10 15 ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b IS 60 Pulsed Current ISM 100 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 30 A, VGS = 0 V trr IRM(REC) Qrr IF = 50 A, dI/dt = 100 A/µs A 1.0 1.5 V 125 200 ns 8 12 A 0.5 1.2 µC Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72070 S12-0335-Rev. C, 13-Feb-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM60N10-17 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 120 120 VGS = 10 thru 7 V 6V 100 I D - Drain Current (A) I D - Drain Current (A) 100 80 60 40 80 60 40 TC = 125 °C 5V 20 20 25 °C 4V - 55 °C 0 0 0 2 4 6 8 0 10 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 6 100 120 0.025 160 TC = - 55 °C 25 °C 80 0.010 40 0.005 0.000 0 0 15 30 45 60 75 0 90 20 40 60 80 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 20 6000 VGS - Gate-to-Source Voltage (V) 5000 Ciss C - Capacitance (pF) VGS = 10 V 0.015 125 °C R DS(on) g fs - Transconductance (S) 0.020 120 4000 3000 2000 Crss 1000 Coss 0 VDS = 50 V ID = 60 A 16 12 8 4 0 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 72070 S12-0335-Rev. C, 13-Feb-12 100 0 30 60 90 Qg - Tota l Gate Charge (nC) 120 Gate Charge www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM60N10-17 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 VGS = 10 V ID = 30 A 2.0 I S - Source Current (A) R DS(on) - On-Resistance (Normalized) 2.5 1.5 1.0 TJ = 150 °C 10 TJ = 25 °C 0.5 0.0 - 50 1 - 25 0 25 50 75 100 125 150 175 0.3 0 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage R DS(on) - On-Resistance (Normalized) 130 ID = 10 A 125 120 115 110 105 100 95 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 4 Document Number: 72070 S12-0335-Rev. C, 13-Feb-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM60N10-17 Vishay Siliconix THERMAL RATINGS 1000 80 Limited by R DS(on)* 100 I D - Drain Current (A) I D - Drain Current (A) 60 40 20 100 µs 10 0 25 50 75 100 125 150 175 1 ms 10 ms 1 0 10 µs 0.1 0.1 TC - Ambient Temperature (°C) Maximum Avalanche and Drain Current vs. Case Temperature TC = 25 °C Single Pulse 100 ms DC 100 1 10 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72070. Document Number: 72070 S12-0335-Rev. C, 13-Feb-12 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail “A” E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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