SUM60N10-17-VB

SUM60N10-17 www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.010 at VGS = 10 V 100 0.023 at VGS = 4.5 V 85 • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC D TO-263 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Symbol Parameter Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 150 °C) Avalanche Current L = 0.1 mH Single Pulse Avalanche Energyb Maximum Power Dissipationb 75 a IDM Pulsed Drain Current TC = 25 °C (TO-220AB and TO-263) TA = 25 °C (TO-263)d A 300 IAS 75 EAS 280 250 PD mJ c W 3.75 TJ, Tstg Operating Junction and Storage Temperature Range V 100 ID TC = 125 °C Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case Symbol PCB Mount (TO-263)d Free Air (TO-220AB) RthJA RthJC Limit Unit 40 62.5 °C/W 0.6 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 1 SUM60N10-17 www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static VDS VGS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 250 µA 2 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V VDS = 100 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V, TJ = 125 °C 50 Drain-Source Breakdown Voltage Gate-Threshold Voltage 4 ± 100 VDS = 100 V, VGS = 0 V, TJ = 175 °C On-State Drain Currenta Drain-Source On-State Resistancea VDS = ≥ 5 V, VGS = 10 V ID(on) RDS(on) VGS = 10 V, ID = 30 A 0.010 0.023 VGS = 10 V, ID = 30 A, TJ = 125 °C 0.020 VDS = 15 V, ID = 30 A µA A VGS = 4.5 V, ID = 20 A gfs nA 250 120 VGS = 10 V, ID = 30 A, TJ = 175 °C Forward Transconductancea V Ω 0.030 25 S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Gate-Source Charge c Gate-Drain Charge Turn-On Delay Time c Timec Turn-Off DelayTime VGS = 0 V, VDS = 25 V, f = 1 MHz Qgs Fall Timec pF 105 VDS = 50 V, VGS = 10 V, ID = 85 A 160 nC 17 Qgd 23 td(on) 12 25 90 135 55 85 130 195 tr c 665 265 Qg c Rise 6550 td(off) VDD = 50 V, RL = 0.6 Ω ID ≅ 85 A, VGEN = 10 V, Rg = 2.5 Ω tf Source-Drain Diode Ratings and Characteristics TC = 25 °C b IS 85 Pulsed Current ISM 240 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Qrr A IF = 85 A, VGS = 0 V 1.0 1.5 V 85 140 ns IF = 50 A, dI/dt = 100 A/µs 4.5 7 A 0.35 µC trr IRM(REC) ns 0.17 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 SUM60N10-17 www.VBsemi.com TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 200 250 VGS = 10 V thru 6 V 5V 200 I D - Drain Current (A) I D - Drain Current (A) 150 150 100 4V 100 TC = 125 °C 50 50 - 55 °C 25 °C 3V 0 0 0 2 4 6 8 0 10 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 250 6 0.020 R DS(on) - On-Resistance (Ω) g fs - Transconductance (S) TC = - 55 °C 200 25 °C 150 125 °C 100 50 0 0 20 40 60 80 0.015 VGS = 6V VGS = 10 V 0.010 0.005 0.000 100 0 20 40 80 100 120 ID - Drain Current (A) ID - Drain Current (A) On-Resistance vs. Drain Current Transconductance 20 VGS - Gate-to-Source Voltage (V) 10 000 8000 C - Capacitance (pF) 60 Ciss 6000 4000 2000 Crss VDS = 50 V ID = 85 A 16 12 8 4 Coss 0 0 0 15 30 45 60 VDS - Drain-to-Source Voltage (V) Capacitance 75 0 50 100 150 200 Qg - Total Gate Charge (nC) Gate Charge 服务热线：400-655-8788 3 SUM60N10-17 www.VBsemi.com TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 2.5 100 VGS = 10 V ID = 30 A I S - Source Current (A) (Normalized) R DS(on) - On-Resistance 2.0 1.5 1.0 TJ = 150 °C TJ = 25 °C 10 0.5 0.0 - 50 1 - 25 0 25 50 75 100 125 150 175 0 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 140 130 100 IAV (A) at T A = 25 °C VDS (V) I Dav (a) 0.3 TJ - Junction Temperature (°C) 10 IAV (A) at T A = 150 °C ID = 250 µA 120 110 1 100 0.1 0.00001 0.0001 0.001 0.01 0.1 1 90 - 50 - 25 0 25 50 75 100 125 tin (s) TJ - Junction Temperature (°C) Avalanche Current vs. Time TJ - Drain-Source Breakdown vs. Junction-Temperature 150 175 服务热线：400-655-8788 4 SUM60N10-17 www.VBsemi.com THERMAL RATINGS 100 1000 10 µs 100 I D - Drain Current (A) I D - Drain Current (A) 80 60 40 100 µs 10 Limited by R DS(on)* 1 ms 10 ms 100 ms, DC 1 20 0 25 0 50 75 100 125 150 175 0.1 0.1 TC = 25 °C Single Pulse 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified TC - Case Temperature (°C) Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 服务热线：400-655-8788 5 SUM60N10-17 www.VBsemi.com TO-263 (D2PAK): 3-LEAD L2 E1 K 6 D4 -A- -Bc2 D2 D3 A E L3 L D D1 E3 A A b2 b e Detail “A” c E2 L4 0.010 M A M 2 PL L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. DIM. A b b1 b2 Thin lead Thick lead Thin lead Thick lead c2 D D1 D2 D3 D4 E E1 E2 E3 e K L L1 L2 L3 L4 M INCHES MILLIMETERS MIN. MAX. 0.160 0.190 0.020 0.039 0.020 0.035 0.045 0.055 0.013 0.018 0.023 0.028 0.013 0.017 0.023 0.027 0.045 0.055 0.340 0.380 0.220 0.240 0.038 0.042 0.045 0.055 0.044 0.052 0.380 0.410 0.245 0.355 0.375 0.072 0.078 0.100 BSC 0.045 0.055 0.575 0.625 0.090 0.110 0.040 0.055 0.050 0.070 0.010 BSC 0.002 MIN. MAX. 4.064 4.826 0.508 0.990 0.508 0.889 1.143 1.397 0.330 0.457 0.584 0.711 0.330 0.431 0.584 0.685 1.143 1.397 8.636 9.652 5.588 6.096 0.965 1.067 1.143 1.397 1.118 1.321 9.652 10.414 6.223 9.017 9.525 1.829 1.981 2.54 BSC 1.143 1.397 14.605 15.875 2.286 2.794 1.016 1.397 1.270 1.778 0.254 BSC 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 服务热线：400-655-8788 6 SUM60N10-17 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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