SUM90N08-4M8P-E3

SUM90N08-4m8P Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (Ω) ID (A) 0.0048 at VGS = 10 V 90d 0.006 at VGS = 8 V 90 d • TrenchFET® Power MOSFET • 175 °C Junction Temperature • 100 % UIS Tested Qg (Typ) 105 RoHS COMPLIANT APPLICATIONS • Power Supply - Half-Bridge - Secondary Synchronous Rectification • Industrial TO-263 D G D S G Top View Ordering Information: SUM90N08-4m8P-E3 (Lead (Pb)-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 75 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 70 °C ID IDM Pulsed Drain Current Avalanche Current a L = 0.1 mH Single Pulse Avalanche Energy TC = 25 °C Maximum Power Dissipationa TA = 25 Operating Junction and Storage Temperature Range °Cc Unit V 90d 90d 240 IAS 70 EAS 245 A mJ b PD 300 3.75 W TJ, Tstg - 55 to 175 °C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) c Junction-to-Case (Drain) RthJA 40 RthJC 0.5 °C/W Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited. Document Number: 74458 S-71663-Rev. C, 06-Aug-07 www.vishay.com 1 SUM90N08-4m8P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min V(BR)DSS VDS = 0 V, ID = 250 µA 75 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VDS = 0 V, VGS = ± 20 V Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS 1 VDS = 75 V, VGS = 0 V, TJ = 125 °C 50 VDS = 75 V, VGS = 0 V, TJ = 150 °C 250 VDS ≥ 10 V, VGS = 10 V VGS = 10 V, ID = 20 A a Forward Transconductance ± 250 VDS = 75 V, VGS = 0 V ID(on) Drain-Source On-State Resistancea 4 rDS(on) gfs 70 V nA µA A 0.004 0.0048 VGS = 10 V, ID = 20 A, TJ = 125 °C 0.0096 VGS = 8 V, ID = 20 A, TJ = 150 °C 0.0106 VGS = 8 V, ID = 20 A 0.0046 VDS = 15 V, ID = 20 A 58 Ω 0.006 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg c Gate-Source Charge Qgs Gate-Drain Chargec Qgd c Rise Timec Turn-Off Delay Time 105 VDS = 30 V, VGS = 10 V, ID = 85 A c Fall Timec td(off) 160 nC 32 28 f = 1 MHz td(on) tr pF 571 275 Rg Gate Resistance Turn-On Delay Time 6460 VGS = 0 V, VDS = 40 V, f = 1 MHz VDD = 30 V, RL = 0.4 Ω ID ≅ 85 A, VGEN = 10 V, Rg = 1 Ω tf 1.3 2.6 23 35 17 26 34 52 8 15 Ω ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b IS 85 Pulsed Current ISM 240 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 30 A, VGS = 0 V trr IRM(REC) Qrr IF = 75 A, di/dt = 100 A/µs A 0.85 1.5 V 68 100 ns 2.6 4 A 88 132 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74458 S-71663-Rev. C, 06-Aug-07 SUM90N08-4m8P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 120 120 VGS = 10 thru 6 V 100 I D - Drain Current (A) I D - Drain Current (A) 100 80 60 40 5V 80 60 40 20 20 0 0 TC = 125 °C 25 °C - 55 °C 0 1 2 3 4 5 0 2 VDS - Drain-to-Source Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.015 150 gfs - Transconductance (S) 25 °C 90 125 °C 60 30 r DS(on) - On-Resistance ( ) TC = - 55 °C 120 0.012 0.009 VGS = 8 V 0.006 0.003 VGS = 10 V 0.000 0 0 10 20 30 40 50 0 60 20 40 80 100 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 8200 0.020 ID = 20 A Ciss 6560 0.016 C - Capacitance (pF) r DS(on) - On-Resistance ( ) 60 0.012 125 °C 0.008 3280 1640 25 °C 0.004 4920 Coss 0.000 4.0 Crss 0 5.2 6.4 7.6 8.8 VGS - Gate-to-Source Voltage (V) On-resistance vs. Gate-to-Source Voltage Document Number: 74458 S-71663-Rev. C, 06-Aug-07 10.0 0 15 30 45 60 75 VDS - Drain-to-Source Voltage (V) Capacitance www.vishay.com 3 SUM90N08-4m8P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 2.0 ID = 20 A VDS = 30 V 8 6 1.7 r DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) ID = 85 A VDS = 60 V 4 2 10 V 1.4 1.1 0.8 0 0 23 46 69 92 0.5 - 50 115 - 25 Gate Charge 50 75 100 125 150 175 0.7 150 °C 10 0.2 V GS(th) Variance (V) I S - Source Current (A) 25 On-Resistance vs. Junction Temperature 100 1.0 25 °C 0.1 0.01 ID = 5 mA - 0.3 - 0.8 - 1.3 ID = 250 µA - 1.8 0.001 0.0 0 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) 0.2 0.4 0.6 0.8 1.0 - 2.3 - 50 1.2 VSD - Source-to-Drain Voltage (V) - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Threshold Voltage Source-Drain Diode Forward Voltage 100 100 ID = 1 mA 90 IDAV (A) V(BR)DSS (normalized) 95 150 °C 25 °C 10 85 80 75 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature www.vishay.com 4 1 0.00001 0.0001 0.001 0.01 0.1 1.0 TAV (sec) Single Pulse Avalanche Current Capability vs. Time Document Number: 74458 S-71663-Rev. C, 06-Aug-07 SUM90N08-4m8P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 180 1000 *Limited by r DS(on) 144 100 µs 108 I D - Drain Current (A) I D - Drain Current (A) 100 Package Limited 72 1 ms 10 10 ms 100 ms dc 1 36 TC = 25 °C Single Pulse 0 0.1 0 25 50 75 100 125 150 0.1 1 TC - Case Temperature (°C) *VGS Maximum Drain Current vs. Case Temperature 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74458. Document Number: 74458 S-71663-Rev. C, 06-Aug-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1