SUM90N08-6M2P-E3

SUM90N08-6m2P Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0062 at VGS = 10 V 90d 75 • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Power Supply - Secondary Synchronous Rectification • Industrial D TO-263 G G D S Top View S Ordering Information: SUM90N08-6m2P-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 75 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 70 °C ID IDM Pulsed Drain Current Avalanche Current a L = 0.1 mH Single Avalanche Energy TC = 25 °C Maximum Power Dissipationa TA = 25 Operating Junction and Storage Temperature Range °Cc Unit V 90d 90d 240 IAS 50 EAS 125 A mJ b PD 272 3.75 W TJ, Tstg - 55 to 175 °C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) c Junction-to-Case (Drain) RthJA 40 RthJC 0.55 °C/W Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited. Document Number: 69552 S-72505-Rev. A, 03-Dec-07 www.vishay.com 1 SUM90N08-6m2P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min V(BR)DSS VDS = 0 V, ID = 250 µA 75 VGS(th) VDS = VGS, ID = 250 µA 2.5 IGSS VDS = 0 V, VGS = ± 20 V Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS 4.5 ± 250 VDS = 75 V, VGS = 0 V 1 VDS = 75 V, VGS = 0 V, TJ = 125 °C 50 VDS = 75 V, VGS = 0 V, TJ = 150 °C 250 ID(on) rDS(on) VDS ≥ 10 V, VGS = 10 V 70 nA µA A VGS = 10 V, ID = 20 A 0.0051 0.0062 VGS = 10 V, ID = 20 A, TJ = 125 °C 0.0082 0.0105 VDS = 15 V, ID = 20 A 50 gfs V Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 247 Total Gate Chargec Qg 75 Gate-Source Chargec Gate-Drain Chargec VDS = 30 V, VGS = 10 V, ID = 50 A td(on) c td(off) tr Fall Timec pF 517 115 nC 25.5 20 Rg c Rise Timec Turn-Off Delay Time VGS = 0 V, VDS = 30 V, f = 1 MHz Qgd Gate Resistance Turn-On Delay Time Qgs 4620 f = 1 MHz VDD = 30 V, RL = 0.6 Ω ID ≅ 50 A, VGEN = 10 V, Rg = 1 Ω tf Source-Drain Diode Ratings and Characteristics TC = 25 °C 1.2 2.4 16 30 11 20 24 40 10 20 IS 85 ISM 240 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 20 A, VGS = 0 V trr IRM(REC) Qrr ns b Pulsed Current Continuous Current Ω IF = 75 A, di/dt = 100 A/µs A 0.83 1.5 V 60 100 ns 3.3 5 A 100 150 nC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69552 S-72505-Rev. A, 03-Dec-07 SUM90N08-6m2P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 120 120 VGS = 10 V thru 7 V 100 80 ID - Drain Current (A) I D - Drain Current (A) 100 VGS = 6 V 60 40 20 80 60 40 TC = 125 °C 20 VGS = 5 V 25 °C - 55 °C 0 0 0 1 2 3 4 5 0 4 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transfer Characteristics 10 0.0057 r DS(on) - On-Resistance (Ω) TC = - 55 °C 80 25 °C 60 125 °C 40 20 0.0055 0.0053 VGS = 10 V 0.0051 0.0049 0.0047 0 0 12 24 36 48 0 60 20 40 60 80 100 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current (SUM) Transconductance 0.05 6000 ID = 20 A Ciss 0.04 4800 C - Capacitance (pF) r DS(on) - On-Resistance (Ω) 6 Output Characteristics (SUM) 100 g fs - Transconductance (S) 2 0.03 0.02 TA = 25 °C 0.01 3600 2400 1200 Coss TA = 150 °C 0 Crss 0 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage (SUM) Document Number: 69552 S-72505-Rev. A, 03-Dec-07 0 15 30 45 60 75 VDS - Drain-to-Source Voltage (V) Capacitance www.vishay.com 3 SUM90N08-6m2P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 10 ID = 20 A VDS = 30 V 8 6 1.7 r DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 50 A VDS = 60 V 4 1.4 1.1 0.8 2 0.5 - 50 0 0 17 34 51 68 85 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 175 0.8 150 °C 0.2 V GS(th) Variance (V) 10 1.0 25 °C 0.1 ID = 5 mA - 0.4 - 1.0 ID = 250 µA - 1.6 0.01 0.001 0.0 - 25 TJ - Junction Temperature (°C) 100 IS - Source Current (A) VGS = 10 V 0.2 0.4 0.6 0.8 1.0 - 2.2 - 50 1.2 - 25 0 25 50 75 100 125 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage 94 150 175 100 ID = 1 mA 86 IDAV (A) V(BR)VDSS (normalized) 90 150 °C 25 °C 10 82 78 74 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain source Breakdown vs. Junction Temperature www.vishay.com 4 1 0.00001 0.0001 0.001 0.01 0.1 1.0 TAV (s) Single Pulse Avalanche Current Capability vs. Time Document Number: 69552 S-72505-Rev. A, 03-Dec-07 SUM90N08-6m2P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 160 1000 Limited by rDS(on)* ID - Drain Current (A) I D - Drain Current (A) 128 Package Limited 96 64 100 µs 100 10 1 ms 10 ms 100 ms DC 1 32 TC = 25 °C Single Pulse 0 0.1 0 25 50 75 100 125 150 175 0.1 TC - Case Temperature (°C) 1 * VGS Maximum Drain Current vs. Case Temperature (SUM) 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69552. Document Number: 69552 S-72505-Rev. A, 03-Dec-07 www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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