SUM90N10-8M2P-E3

SUM90N10-8m2P Vishay Siliconix N Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) () 100 0.0082 at VGS = 10 V ID (A) 90 d Qg (Typ) 97 • • • • TrenchFET® Power MOSFETS 175 °C Junction Temperature 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC RoHS COMPLIANT APPLICATIONS • Power Supply - Secondary Synchronous Rectification • Industrial • Primary Switch TO-263 D G D G S Top View S Ordering Information: SUM90N10-8m2P-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 70 °C ID IDM Pulsed Drain Current Avalanche Current a L = 0.1 mH Single Avalanche Energy TC = 25 °C Maximum Power Dissipationa TA = 25 °Cc Operating Junction and Storage Temperature Range V 90d 90d A 240 IAS 60 EAS 180 PD Unit 300b 3.75 mJ W TJ, Tstg - 55 to 175 °C Symbol Limit Unit RthJA 40 RthJC 0.5 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) c Junction-to-Case (Drain) °C/W Notes: a. Duty cycle  1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). d. Package limited. Document Number: 74643 S12-0335-Rev. B, 13-Feb-12 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM90N10-8m2P Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. V(BR)DSS VDS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 250 µA 2.5 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS 4.5 ± 250 VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 125 °C 50 VDS = 100 V, VGS = 0 V, TJ = 150 °C 250 ID(on) RDS(on) gfs VDS 10 V, VGS = 10 V 70 V nA µA A VGS = 10 V, ID = 20 A 0.0067 0.0082 VGS = 10 V, ID = 20 A, TJ = 125 °C 0.0127 0.0170 VDS = 15 V, ID = 20 A 62  S Dynamicb Input Capacitance Ciss 6290 Output Capacitance Coss Reverse Transfer Capacitance Crss 182 Total Gate Chargec Qg 97 Gate-Source Chargec Gate-Drain Chargec td(on) c td(off) Rise Timec Turn-Off Delay Time VDS = 50 V, VGS = 10 V, ID = 85 A tr Fall Timec 150 nC 32 25 Rg c pF 535 Qgd Gate Resistance Turn-On Delay Time Qgs VGS = 0 V, VDS = 50 V, f = 1 MHz f = 1 MHz VDD = 50 V, RL = 0.588  ID  85 A, VGEN = 10 V, Rg = 1  tf 0.28 1.4 2.8 23 35 17 26 34 52 9 18  ns b Source-Drain Diode Ratings and Characteristics (TC = 25 °C) IS 85 Pulsed Current ISM 240 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 30 A, VGS = 0 V trr IRM(REC) Qrr IF = 75 A, di/dt = 100 A/µs A 0.85 1.5 V 61 100 ns 3 4.5 A 91 130 µC Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74643 S12-0335-Rev. B, 13-Feb-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM90N10-8m2P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 120 180 VGS = 10 thru 7 V 150 g fs - Transconductance (S) ID - Drain Current (A) 100 80 60 6V 40 20 TC = - 55 °C 120 TC = 25 °C 90 TC = 125 °C 60 30 5V 0 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) 5 0 12 24 36 48 60 I D - Drain Current (A) Output Characteristics Transconductance 100 0.05 ID = 20 A RDS(on) - On-Resistance (Ω) I D - Drain Current (A) 80 60 40 TC = 125 °C TC = 25 °C 20 0.04 0.03 0.02 TA = 150 °C 0.01 TA = 25 °C TC = - 55 °C 0 0 2 4 6 8 0.00 4.0 10 5.2 VGS - Gate-to-Source Voltage (V) 6.4 7.6 8.8 10 VGS - Gate-to-Source Voltage (V) Transfer Characteristics On-resistance vs. Gate-to-Source Voltage 0.0073 8000 0.0071 6400 0.0069 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Ciss VGS = 10 V 0.0067 4800 3200 1600 0.0065 Coss 0.0063 Crss 0 0 20 40 60 ID - Drain Current (A) 80 On-Resistance vs. Drain Current Document Number: 74643 S12-0335-Rev. B, 13-Feb-12 100 0 20 40 60 80 100 VDS - Drain-to-Source Voltage (V) Capacitance www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM90N10-8m2P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.7 ID = 20 A 0.2 2.0 VGS(th) Variance (V) RDS(on) - On-Resistance (Normalized) 2.5 VGS = 10 V 1.5 - 0.3 ID = 5 mA - 0.8 - 1.3 1.0 ID = 250 µA - 1.8 0.5 - 50 - 25 0 - 2.3 - 50 125 150 175 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 Qg - Total Gate Charge (nC) Gate Charge Drain Source Breakdown vs. Junction Temperature 25 50 75 100 125 150 175 25 50 75 100 On-Resistance vs. Junction Temperature Threshold Voltage 130 ID = 85 A ID = 1 mA VDS = 50 V VDS = 30 V 8 124 V(BR)DSS (normalized) VGS - Gate-to-Source Voltage (V) 0 TJ - Temperature (°C) 10 VDS = 70 V 6 4 2 118 112 106 0 0 22 44 66 88 100 - 50 110 100 - 25 140 TJ = 150 °C 112 ID - Drain Current (A) 10 I S - Source Current (A) - 25 TJ - Junction Temperature (°C) TJ = 25 °C 1 0.1 0.01 Package Limited 84 56 28 0.001 0 0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage www.vishay.com 4 1.2 0 25 50 75 100 125 150 TC - Case Temperature (°C) Maximum Drain Current vs. Case Temperature Document Number: 74643 S12-0335-Rev. B, 13-Feb-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM90N10-8m2P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1000 100 *Limited by r DS(on) TJ = 150 °C I D - Drain Current (A) I DAV (A) 100 TJ = 25 °C 10 100 µs 10 1 ms 10 ms 100 ms DC 1 TC = 25 °C Single Pulse 1 10-5 10-4 10-2 10-3 t AV (sec) 10-1 1 0.1 0.1 *VGS Single Pulse Avalanche Current Capability vs. Time 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74643. Document Number: 74643 S12-0335-Rev. B, 13-Feb-12 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail “A” E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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