TSFF5410

TSFF5410 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES 94 8390 • • • • • Package type: leaded Package form: T-1¾ Dimensions (in mm): Ø 5 Leads with stand-off Peak wavelength: p = 870 nm • • • • High reliability High radiant power High radiant intensity Angle of half intensity:  = ± 22° • Low forward voltage • Suitable for high pulse current operation • High modulation bandwidth: fc = 24 MHz • Good spectral matching to Si photodetectors • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC DESCRIPTION TSFF5410 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 APPLICATIONS • Infrared video data transmission between camcorder and TV set • Free air data transmission systems with high modulation frequencies or high data transmission rate requirements PRODUCT SUMMARY COMPONENT Ie (mW/sr)  (deg) p (nm) tr (ns) 70 ± 22 870 15 TSFF5410 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSFF5410 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE Reverse voltage PARAMETER TEST CONDITION VR 5 UNIT V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 Surge forward current tp = 100 μs IFSM 1 A PV 180 mW Power dissipation Rev. 1.8, 24-Aug-11 Document Number: 81091 1 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSFF5410 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE Tj 100 °C Tamb - 40 to + 85 °C °C Junction temperature Operating temperature range Storage temperature range Tstg - 40 to + 100 t  5 s, 2 mm from case Tsd 260 °C J-STD-051, leads 7 mm, soldered on PCB RthJA 230 K/W Soldering temperature Thermal resistance junction/ambient UNIT 200 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 RthJA = 230 K/W 100 80 60 40 100 80 RthJA = 230 K/W 60 40 20 20 0 0 0 10 21142 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 0 10 21143 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance TEST CONDITION SYMBOL TYP. MAX. UNIT IF = 100 mA, tp = 20 ms VF 1.5 1.8 V IF = 1 A, tp = 100 μs VF 2.3 3 IF = 1 mA TKVF - 1.8 VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj MIN. V mV/K 10 125 μA pF IF = 100 mA, tp = 20 ms Ie IF = 1 A, tp = 100 μs Ie 700 IF = 100 mA, tp = 20 ms e 50 mW IF = 100 mA TKe - 0.35 %/K  ± 22 deg Peak wavelength IF = 100 mA p 870 nm Spectral bandwidth IF = 100 mA  40 nm Temperature coefficient of p IF = 100 mA TKp 0.25 nm/K Rise time IF = 100 mA tr 15 ns Fall time IF = 100 mA tf 15 ns IDC = 70 mA, IAC = 30 mA pp fc 24 MHz d 2.1 mm Radiant intensity Radiant power Temperature coefficient of e Angle of half intensity Cut-off frequency Virtual source diameter Rev. 1.8, 24-Aug-11 45 70 135 mW/sr mW/sr Document Number: 81091 2 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSFF5410 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1.25 Φe rel - Relative Radiant Power Tamb < 50 °C tp/T = 0.01 1000 IF - Forward Current (mA) 0.02 0.05 0.1 0.2 0.5 100 0.01 0.1 1 10 0.75 0.5 0.25 0 780 100 tp - Pulse Duration (ms) 16031 1.0 Fig. 6 - Relative Radiant Power vs. Wavelength Fig. 3 - Pulse Forward Current vs. Pulse Duration 0° 10° 20° 100 tp = 100 µs tp/T = 0.001 10 40° 1.0 0.9 50° 0.8 60° 80° 1 0 18873 1 3 2 VF - Forward Voltage (V) 4 Fig. 4 - Forward Current vs. Forward Voltage 70° 0.7 ϕ - Angular Displacement 30° Ie rel - Relative Radiant Intensity IF - Forward Current (mA) 1000 94 8883 0.6 0.4 0.2 0 Fig. 7 - Relative Radiant Intensity vs. Angular Displacement 1 1000 0 Φe, Ie - Attenuation (dB) Ie - Radiant Intensity (mW/sr) 980 880 λ - Wavelength (nm) 95 9886 100 10 1 -1 -2 -3 IFDC = 70 mA IFAC = 30 mA pp -4 -5 0.1 1 18220 10 100 IF - Forward Current (mA) Fig. 5 - Radiant Intensity vs. Forward Current Rev. 1.8, 24-Aug-11 101 1000 14256 102 103 104 105 f - Frequency (kHz) Fig. 8 - Attenuation vs. Frequency Document Number: 81091 3 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSFF5410 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters C Ø 5.8 ± 0.15 A < 0.7 7.7 ± 0.15 8.7 ± 0.3 Area not plane 34.3 ± 0.55 11.3 ± 0.3 (3.5) R2.49 (sphere) 1.1 ± 0.25 1 min. Ø 5 ± 0.15 + 0.15 0.5 - 0.05 + 0.15 0.5 - 0.05 technical drawings according to DIN specifications 2.54 nom. 6.544-5258.06-4 Issue: 3; 19.05.09 95 11260 Rev. 1.8, 24-Aug-11 Document Number: 81091 4 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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