TSFF5510

TSFF5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5510 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted, plastic package. Features • • • • • • • • • • • • Package type: leaded Dimensions: T-1¾ (∅ 5 mm) Peak wavelength: λp = 870 nm High reliability High radiant power 21061 e2 Applications • Infrared video data transmission between camcorder and TV set • Free air data transmission systems with high modulation frequencies or high data transmission High radiant intensity Angle of half intensity: ϕ = ± 38° Low forward voltage Suitable for high pulse current operation High modulation bandwidth Good spectral matching to Si photodetectors Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC Product Summary Component Symbol φe Ie TSFF5510 tr, tf ϕ λp Value 55 32 15 ± 38 870 Unit mW mW/sr ns deg nm Ordering Information Ordering code TSFF5510 Note: MOQ: minimum order quantity Packing Bulk Remarks MOQ: 4000 pcs, 4000 pcs/bulk Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Document Number 81835 Rev. 1.0, 07-Feb-08 t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm soldered on PCB tp/T = 0.5, tp = 100 µs tp = 100 µs Test condition Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 1 170 100 - 40 to + 85 - 40 to + 100 260 250 Unit V mA mA A mW °C °C °C °C K/W www.vishay.com 1 For technical support, contact: emittertechsupport@vishay.com TSFF5510 Vishay Semiconductors 180 120 100 80 PV - Power Dissipation (mW) 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21008 RthJA = 250 K/W IF - Forward Current (mA) RthJA = 250 K/W 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21007 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Figure 1. Power Dissipation Limit vs. Ambient Temperature Figure 2. Forward Current Limit vs. Ambient Temperature Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Test condition IF = 100 mA, tp = 20 ms IF = 450 mA, tp = 100 µs IF = 1 A, tp = 100 µs IF = 1 m A VR = 5 V VR = 0 V, f = 1 MHz, E = 0 Symbol VF VF VF TKVF IR Cj 110 Min. 1.3 1.5 Typ. 1.45 1.75 2.1 - 1.8 10 Max. 1.7 2.1 Unit V V V mV/K µA pF Optical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Radiant intensity Radiant power Temperature coefficient of φe Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time Fall time Cut-off frequency IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IDC = 70 mA, IAC = 30 mA pp Test condition IF = 100 mA, tp = 20 ms IF = 100 mA, tp = 20 ms IF = 450 mA, tp = 100 µs IF = 1 A, tp = 100 µs IF = 100 mA Symbol Ie φe φe φe TKφe ϕ λp Δλ TKλp tr tf fc 44 200 Min. Typ. 32 55 247 550 - 0.35 ± 38 870 55 0.25 15 15 23 89 400 Max. Unit mW/sr mW mW mW %/K deg nm nm nm/K ns ns MHz www.vishay.com 2 For technical support, contact: emittertechsupport@vishay.com Document Number 81835 Rev. 1.0, 07-Feb-08 TSFF5510 Vishay Semiconductors Basic Characteristics Tamb = 25 °C, unless otherwise specified 1000 1000 tP/T = 0.01 0.02 Tamb < 50° IF - Forward Current (mA) φe - Radiant Power (mW) 0.05 0.1 100 10 0.2 0.5 1 tP = 100 µs tP/T = 0.002 100 0.01 16031 0.1 0.1 1.0 10 100 21062 1 10 100 1000 tP - Pulse Duration (ms) IF - Forward Current (mA) Figure 3. Pulse Forward Current vs. Pulse Duration Figure 6. Radiant Power vs. Forward Current 10 1.25 Φe, rel - Relative Radiant Power IF = 100 mA 1.00 IF - Forward Current (A) 1 0.75 0.1 0.50 0.01 0.25 0.001 0 21009 0 0.5 1 1.5 2 2.5 3 3.5 4 21011 750 770 790 810 830 850 870 890 910 930 950 970 VF - Forward Voltage (V) λ - Wavelength (nm) Figure 4. Forward Current vs. Forward Voltage Figure 7. Relative Radiant Power vs. Wavelength 1000 1.1 Ie, rel - Relative Radiant Intensity 1000 21012 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 - 90 - 70 - 50 - 30 - 10 0 10 30 50 70 90 Ie - Radiant Intensity (mW/sr) 100 10 1 tP = 100 µs tP/T = 0.002 0.1 1 21010 10 100 IF - Forward Current (mA) Angle (°) Figure 5. Radiant Intensity vs. Forward Current Figure 8. Relative Radiant Intensity vs. Angular Displacement Document Number 81835 Rev. 1.0, 07-Feb-08 For technical support, contact: emittertechsupport@vishay.com www.vishay.com 3 TSFF5510 Vishay Semiconductors Package Dimensions in millimeters 20796 www.vishay.com 4 For technical support, contact: emittertechsupport@vishay.com Document Number 81835 Rev. 1.0, 07-Feb-08 TSFF5510 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81835 Rev. 1.0, 07-Feb-08 For technical support, contact: emittertechsupport@vishay.com www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1