TSFF5510_08

TSFF5510 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Leads with stand-off Peak wavelength: λp = 870 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 38° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 24 MHz Good spectral matching with Si photodetectors Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC 21061 DESCRIPTION TSFF5510 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. with APPLICATIONS • Infrared video data transmission between camcorder and TV set • Free air data transmission systems with high data transmission rates PRODUCT SUMMARY COMPONENT TSFF5510 Ie (mW/sr) 32 ϕ (deg) ± 38 λp (nm) 870 tr (ns) 15 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSFF5510 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾ ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified TEST CONDITION SYMBOL VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA VALUE 5 100 200 1 180 100 - 40 to + 85 - 40 to + 100 260 230 UNIT V mA mA A mW °C °C °C °C K/W tp/T = 0.5, tp = 100 µs tp = 100 µs t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm soldered on PCB Document Number: 81835 Rev. 1.1, 16-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 139 TSFF5510 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero 200 180 120 100 80 RthJA = 230 K/W 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21143 PV - Power Dissipation (mW) 140 120 100 80 60 40 20 0 RthJA = 230 K/W IF - Forward Current (mA) 160 0 10 20 30 40 50 60 70 80 90 100 21142 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time Fall time Cut-off frequency Note Tamb = 25 °C, unless otherwise specified IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IDC = 70 mA, IAC = 30 mA pp TEST CONDITION IF = 100 mA, tp = 20 ms IF = 450 mA, tp = 100 µs IF = 1 A, tp = 100 µs IF = 1 m A VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 100 mA, tp = 20 ms IF = 100 mA SYMBOL VF VF VF TKVF IR Cj Ie φe TKφe ϕ λp Δλ TKλp tr tf fc 16 110 32 55 - 0.35 ± 38 870 55 0.25 15 15 24 48 MIN. 1.3 1.5 TYP. 1.45 1.75 2.1 - 1.8 10 MAX. 1.7 2.1 UNIT V V V mV/K µA pF mW/sr mW %/K deg nm nm nm/K ns ns MHz www.vishay.com 140 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81835 Rev. 1.1, 16-Sep-08 TSFF5510 High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Vishay Semiconductors 1000 1000 IF - Forward Current (mA) tP/T = 0.01 0.02 Tamb < 50 °C φe - Radiant Power (mW) 0.05 0.1 100 10 0.2 0.5 1 tP = 100 µs tP/T = 0.002 100 0.01 16031 0.1 0.1 1.0 10 100 21062 1 10 100 1000 tP - Pulse Duration (ms) IF - Forward Current (mA) Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 6 - Radiant Power vs. Forward Current 10 1.25 Φe, rel - Relative Radiant Power IF - Forward Current (A) 1.00 1 0.75 0.1 0.50 0.01 0.25 0.001 0 21009 0.5 1 1.5 2 2.5 3 3.5 4 21011 0 750 790 830 870 910 950 VF - Forward Voltage (V) λ - Wavelength (nm) Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Relative Radiant Power vs. Wavelength 1000 1.1 Ie, rel - Relative Radiant Intensity 1000 21012 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 - 90 - 70 - 50 - 30 - 10 0 10 30 50 70 90 Ie - Radiant Intensity (mW/sr) 100 10 1 tP = 100 µs tP/T = 0.002 0.1 1 21010 10 100 IF - Forward Current (mA) Angle (°) Fig. 5 - Radiant Intensity vs. Forward Current Fig. 8 - Relative Radiant Intensity vs. Angular Displacement Document Number: 81835 Rev. 1.1, 16-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 141 TSFF5510 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero PACKAGE DIMENSIONS in millimeters 20796 www.vishay.com 142 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81835 Rev. 1.1, 16-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1