TSFF5410

VISHAY TSFF5410 Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm (T-1¾) Package Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant power at wavelength of 870 nm. Features • High modulation bandwidth (23 MHz) • Extra high radiant power and radiant intensity • Low forward voltage • • • • • • • Suitable for high pulse current operation Standard T-1¾ (∅ 5 mm) package Angle of half intensity ϕ = ± 22° Peak wavelength λp = 870 nm High reliability Good spectral matching to Si photodetectors Lead-free device 94 8390 Applications Infrared video data transmission between Camcorder and TV set. Free air data transmission systems with high modulation frequencies or high data transmission rate requirements. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse Voltage Forward current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/ Ambient t ≤ 5 sec, 2 mm from case tp/T = 0.5, tp = 100 µs tp = 100 µs Test condition Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 1 250 100 - 25 to + 85 - 25 to + 85 260 300 Unit V mA mA A mW °C °C °C °C K/W Document Number 81091 Rev. 1.4, 23-Jun-04 www.vishay.com 1 TSFF5410 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward Voltage Temp. Coefficient of VF Reverse Current Junction capacitance Test condition IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 100 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 Symbol VF VF TKVF IR Cj 125 Min Typ. 1.5 2.3 -2.1 10 Max 1.8 3.0 VISHAY Unit V V mV/K µA pF Optical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Radiant Intensity Radiant Power Temp. Coefficient of φe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of λp Rise Time Fall Time Cut-Off Frequency Virtual Source Diameter IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IDC = 70 mA, IAC = 30 mA pp Test condition IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 100 mA, tp = 20 ms IF = 100 mA Symbol Ie Ie φe TKφe ϕ λp ∆λ TK λp tr tf fc ∅ Min 40 Typ. 70 700 50 -0.35 ±22 870 40 0.25 15 15 23 2.1 Max 200 Unit mW/sr mW/sr mW %/K deg nm nm nm/K ns ns MHz mm Typical Characteristics (Tamb = 25 °C unless otherwise specified) 300 PV –Power Dissipation (mW) I F–Forward Current ( mA ) 200 175 150 125 100 75 50 25 0 0 10 20 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature ( °C ) 16964 250 200 RthJA 150 100 50 0 RthJA 0 10 20 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature ( C ) 16647 Figure 1. Power Dissipation vs. Ambient Temperature Figure 2. Forward Current vs. Ambient Temperature www.vishay.com 2 Document Number 81091 Rev. 1.4, 23-Jun-04 VISHAY TSFF5410 Vishay Semiconductors 1.25 1000 I F -Forward Current ( mA ) t p/ T= 0.01 0.02 Tamb < 50° 0.05 0.1 Φe, rel - Relative Radiant Power 1.0 0.75 0.5 0.2 0.5 0.25 0 780 100 0.01 16031 0.1 1.0 10 100 95 9886 880 λ – Wavelength ( nm ) 980 tp - Pulse Duration ( ms ) Figure 3. Pulse Forward Current vs. Pulse Duration Figure 6. Relative Radiant Power vs. Wavelength 0° 1000 I F - Forward Current ( mA ) I e rel - Relative Radiant Intensity 10 ° 20° 30 ° 40 ° 1.0 0.9 0.8 0.7 50 ° 60 ° 70 ° 80 ° 0.6 0.4 0.2 0 0.2 0.4 0.6 100 t p = 100 µs t p / T = 0.001 10 1 0 18873 1 2 3 4 94 8883 VF - Forward Voltage ( V ) Figure 4. Forward Current vs. Forward Voltage Figure 7. Relative Radiant Intensity vs. Angular Displacement 1000.0 I e - Radiant Intensity ( mW/sr ) Φ e, I e -Attenuation (dB) 1 0 -1 -2 -3 -4 -5 10 14256 100.0 10.0 1.0 IFDC = 70mA IFAC = 30mA pp 0.1 18220 1 10 100 1000 100 1000 10000 100000 I F - Forward Current ( mA ) f - Frequency ( kHz ) Figure 5. Radiant Intensity vs. Forward Current Figure 8. Attenuation vs. Frequency Document Number 81091 Rev. 1.4, 23-Jun-04 www.vishay.com 3 TSFF5410 Vishay Semiconductors Package Dimensions in mm VISHAY 95 1 1260 www.vishay.com 4 Document Number 81091 Rev. 1.4, 23-Jun-04 VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. TSFF5410 Vishay Semiconductors 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 81091 Rev. 1.4, 23-Jun-04 www.vishay.com 5