TSFF5210_09

TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • Package type: leaded Package form: T-1 3/4 Dimensions (in mm): ∅ 5 Leads with stand-off Peak wavelength: λp = 870 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 10° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 24 MHz Good spectral matching with Si photodetectors Compliant to RoHS directive 2002/95/EC and accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 94 8390 DESCRIPTION TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. in APPLICATIONS • Infrared video data transmission between camcorder and TV set • Free air data transmission systems with high modulation frequencies or high data transmission rate requirements • Smoke-automatic fire detectors PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) ± 10 λP (nm) 870 tr (ns) 15 TSFF5210 180 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSFF5210 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾ ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified Document Number: 81090 Rev. 1.7, 29-Jun-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 1 t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB tp/T = 0.5, tp = 100 µs tp = 100 µs TEST CONDITION SYMBOL VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA VALUE 5 100 200 1 180 100 - 40 to + 85 - 40 to + 100 260 230 UNIT V mA mA A mW °C °C °C °C K/W TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero 200 180 120 100 80 RthJA = 230 K/W 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21143 PV - Power Dissipation (mW) 140 120 100 80 60 40 20 0 RthJA = 230 K/W IF - Forward Current (mA) 160 0 10 20 30 40 50 60 70 80 90 100 21142 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time Fall time Cut-off frequency Virtual source diameter Note Tamb = 25 °C, unless otherwise specified IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IDC = 70 mA, IAC = 30 mA pp TEST CONDITION IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 1 m A VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 100 mA, tp = 20 ms IF = 100 mA SYMBOL VF VF TKVF IR Cj Ie Ie φe TKφe ϕ λp Δλ TKλp tr tf fc d 120 125 180 1800 50 - 0.35 ± 10 870 40 0.25 15 15 24 3.7 360 MIN. TYP. 1.5 2.3 - 1.8 10 MAX. 1.8 3.0 UNIT V V mV/K µA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns MHz mm www.vishay.com 2 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81090 Rev. 1.7, 29-Jun-09 TSFF5210 High Speed Infrared Emitting Diode, Vishay Semiconductors 870 nm, GaAlAs Double Hetero BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1000 tP/T = 0.01 0.02 Tamb < 50 °C 1.25 Φe rel - Relative Radiant Power IF - Forward Current (mA) 1.0 0.05 0.1 0.75 0.5 0.2 0.5 100 0.01 0.25 0 780 0.1 1 10 100 880 λ - Wavelength (nm) 980 16031 tP - Pulse Duration (ms) 95 9886 Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 6 - Relative Radiant Power vs. Wavelength 1000 Ie rel - Relative Radiant Intensity 0° 10° 20° 30° ϕ - Angular Displacement IF - Forward Current (mA) 100 tP = 100 µs tP/T = 0.001 10 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 1 0 18873 1 3 2 VF - Forward Voltage (V) 4 15989 Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Relative Radiant Intensity vs. Angular Displacement 1000 Ie - Radiant Intensity (mW/sr) Φe, Ie - Attenuation (dB) 1 0 100 -1 -2 -3 -4 -5 101 IFDC = 70 mA IFAC = 30 mA pp 10 1 0.1 1 16032 10 100 1000 102 103 104 105 IF - Forward Current (mA) 14256 f - Frequency (kHz) Fig. 5 - Radiant Intensity vs. Forward Current Fig. 8 - Attenuation vs. Frequency Document Number: 81090 Rev. 1.7, 29-Jun-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 3 TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero PACKAGE DIMENSIONS in millimeters A C Ø 5.8 ± 0.15 R2.49 (sphere) 7.7 ± 0.15 8.7 ± 0.3 (4.9) 12.7 ± 0.3 < 0.7 35.7 ±v0.55 Area not plane 1.1 ± 0.25 Ø 5 ± 0.15 1 min. technical drawings according to DIN specifications + 0.15 0.5 - 0.05 + 0.15 0.5 - 0.05 2.54 nom. 6.544-5258.09-4 Issue: 4; 19.05.09 15909 www.vishay.com 4 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81090 Rev. 1.7, 29-Jun-09 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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