VEMD2020X01

VEMD2000X01, VEMD2020X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • • • • • • 21568-1 VEMD2020X01 • • • VEMD2000X01 • • • DESCRIPTION Package type: surface mount Package form: GW, RGW Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 AEC-Q101 qualified High radiant sensitivity Daylight blocking filter matched with 830 nm to 950 nm IR emitters Fast response times Angle of half sensitivity: ϕ = ± 15° Package matched with IR emitter series VSMB2000X01 Floor life: 4 weeks, MSL 2a, acc. J-STD-020 Lead (Pb)-free reflow soldering Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 VEMD2000X01 and VEMD2020X01 are high speed and high sensitive PIN photodiodes in a miniature surface mount package (SMD) with dome lens and daylight blocking filter. Filter is matched with IR emitters operating at wavelength of 830 nm to 950 nm. The photo sensitive area of the chip is 0.23 mm2. APPLICATIONS • • • • • High speed photo detector Infrared remote control Infrared data transmission Photo interrupters Shaft encoders PRODUCT SUMMARY COMPONENT Ira (μA) ϕ (deg) λ0.5 (nm) VEMD2000X01 12 ± 15 750 to 1050 VEMD2020X01 12 ± 15 750 to 1050 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMD2000X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VEMD2020X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE VR 60 V PV 215 mW Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C Acc. reflow solder profile fig. 7 Tsd 260 °C Acc. J-STD-051 RthJA 250 K/W Reverse voltage Power dissipation Tamb ≤ 25 °C Junction temperature Soldering temperature Thermal resistance junction/ambient Rev. 1.3, 23-Aug-11 UNIT Document Number: 81962 1 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD2000X01, VEMD2020X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL IF = 50 mA VF IR = 100 μA, E = 0 V(BR) VR = 10 V, E = 0 Iro VR = 0 V, f = 1 MHz, E = 0 CD 4 pF VR = 5 V, f = 1 MHz, E = 0 CD 1.3 pF Forward voltage Breakdown voltage Reverse dark current Diode capacitance MIN. TYP. MAX. UNIT 1 V 32 V 1 10 nA Open circuit voltage Ee = 1 mW/cm2, λ = 950 nm Vo 350 mV Temperature coefficient of Vo Ee = 1 mW/cm2, λ = 950 nm TKVo - 2.6 mV/K Short circuit current Ee = 1 mW/cm2, λ = 950 nm Ik 11 μA Temperature coefficient of Ik Ee = 1 mW/cm2, λ = 950 nm TKIk 0.1 %/K Reverse light current Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V Ira 8.5 12 17 μA Angle of half sensitivity ϕ ± 15 deg Wavelength of peak sensitivity λp 940 nm Range of spectral bandwidth λ0.5 750 to 1050 nm Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr 100 ns Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf 100 ns BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Ira, rel - Relative Reverse Light Current Iro - Reverse Dark Current (nA) 1000 100 10 VR = 10 V 1 20 94 8427 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 1 - Reverse Dark Current vs. Ambient Temperature Rev. 1.3, 23-Aug-11 1.4 VR = 5 V λ = 950 nm 1.2 1.0 0.8 0.6 0 94 8416 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Document Number: 81962 2 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD2000X01, VEMD2020X01 www.vishay.com Vishay Semiconductors 0° 10° 20° 10 VCE = 5 V λ = 950 nm 1.0 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement 30° Srel - Relative Sensitivity Ira - Reverse Light Current (µA) 100 80° 0.1 0.01 16055 0.1 1 0.6 10 0.4 0.2 0 94 8248 Ee - Irradiance (mW/cm²) Fig. 3 - Reverse Light Current vs. Irradiance Fig. 6 - Relative Radiant Intensity vs. Angular Displacement CD - Diode Capacitance (pF) 8 6 E=0 f = 1 MHz 4 2 0 1 0.1 94 8430 10 100 VR- Reverse Voltage (V) Fig. 4 - Diode Capacitance vs. Reverse Voltage S (λ)rel - Relative Spectral Sensitivity 1.2 1.0 0.8 0.6 0.4 0.2 0 600 21554 700 800 900 1000 1100 λ - Wavelength (nm) Fig. 5 - Relative Spectral Sensitivity vs. Wavelength Rev. 1.3, 23-Aug-11 Document Number: 81962 3 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD2000X01, VEMD2020X01 www.vishay.com Vishay Semiconductors REFLOW SOLDER PROFILE DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 FLOOR LIFE Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020. 200 max. 30 s 150 max. 100 s max. 120 s 100 DRYING max. ramp up 3 °C/s max. ramp down 6 °C/s 50 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. 0 0 50 100 19841 150 200 250 300 Time (s) Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020D PACKAGE DIMENSIONS in millimeters: VEMD2000 0.3 Ø 1.8 ± 0.1 Z 1.6 0.19 2.77 ± 0.2 0.05 ± 0.1 0.4 2.2 2.2 5.8 ± 0.2 Z 20:1 1.1 ± 0.1 0.4 0.5 2.3 ± 0.2 0.254 exposed copper 2.3 ± 0.2 Cathode Pin ID Anode 1.7 0.75 Solder pad proposal acc. IPC 7351 technical drawings according to DIN specifications Not indicated tolerances ± 0.1 Ø 2.3 ± 0.1 6.7 Drawing-No.: 6.544-5391.02-4 Issue: 2; 18.03.10 21517 Rev. 1.3, 23-Aug-11 Document Number: 81962 4 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD2000X01, VEMD2020X01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters: VEMD2020 Ø 1.8 2.77 ± 0.2 0.3 0.4 0.19 0.05 1.6 X 2.2 2.2 4.2 ± 0.2 X 20:1 exposed copper 0.6 Cathode 0.254 2.3 ± 0.2 0.4 0.5 2.3 ± 0.2 Anode Pin ID technical drawings according to DIN specifications 0.75 Solder pad proposal acc. IPC 7351 Not indicated tolerances ± 0.1 2.45 5.15 Drawing-No.: 6.544-5383.02-4 Issue: 4; 18.03.10 21488 Rev. 1.3, 23-Aug-11 Document Number: 81962 5 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD2000X01, VEMD2020X01 www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VEMD2000 Unreel direction X 2. Ø 62 ± 0.5 Reel 0 5± Ø 13 ± 0.5 Ø 330 ± 1 .5 Tape position coming out from reel 6000 pcs/reel Label posted here Technical drawings according to DIN specifications 12.4 ± 1.5 Leader and trailer tape: Empty (160 mm min.) Parts mounted Direction of pulling out Devicce Lead I Lead II Collector Emitter Cathode Anode Anode Cathode Ø 1.55 ± 0.05 I VEMT2000 VEMT2500 X 2:1 4 ± 0.1 2 ± 0.05 VEMD2000 5.5 ± 0.05 VEMD2500 VSMB2000 VSMG2000 VSMY2850RG 3.05 ± 0.1 II 12 ± 0.3 Terminal position in tape 1.75 ± 0.1 Empty (400 mm min.) 4 ± 0.1 Drawing-No.: 9.800-5100.01-4 Issue: 2; 18.03.10 21572 Rev. 1.3, 23-Aug-11 Document Number: 81962 6 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD2000X01, VEMD2020X01 www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VEMD2020 Reel X Unreel direction 5± Ø 62 ± 0.5 2. Ø 13 ± 0.5 Ø 330 ± 1 0.5 Tape position coming out from reel 6000 pcs/reel Label posted here technical drawings according to DIN specifications 12.4 ± 1.5 Leader and trailer tape: Empty (160 mm min.) Parts mounted Direction of pulling out Ø 1.55 ± 0.05 Devicce Lead I Lead II Collector Emitter Cathode Anode Anode Cathode I VEMT2020 VEMT2520 X 2:1 4 ± 0.1 2 ± 0.05 VSMB2020 VEMD2020 VEMD2520 VSMY2850G 3.05 ± 0.1 II 4 ± 0.1 5.5 ± 0.05 VSMG2020 12 ± 0.3 Terminal position in tape 1.75 ± 0.1 Empty (400 mm min.) Drawing-No.: 9.800-5091.01-4 Issue: 3; 18.03.10 21571 Rev. 1.3, 23-Aug-11 Document Number: 81962 7 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000