VEMD2523X01

VEMD2503X01, VEMD2523X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES VEMD2503X01 • Package type: surface mount VEMD2523X01 • Package form: GW, RGW • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55 • AEC-Q101 qualified • High radiant sensitivity • Suitable for visible and neat infrared radiation • Fast response times • Angle of half sensitivity:  = ± 35° • Package matched with IR emitter series VSMB2943X01 DESCRIPTION • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 VEMD2503X01 and VEMD2523X01 are high speed and high sensitive PIN photodiodes in a miniature surface mount package (SMD) with dome lens. The clear epoxy allows light detection of a wide wavelength range from 350 nm to 1120 nm. The photo sensitive area of the chip is 0.23 mm2. • Lead (Pb)-free reflow soldering • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High speed photo detector • Light curtain • Detector for optical switch PRODUCT SUMMARY COMPONENT Ira (μA)  (deg) 0.1 (nm) VEMD2503X01 10 ± 35 350 to 1120 VEMD2523X01 10 ± 35 350 to 1120 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMD2503X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VEMD2523X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Power dissipation Tamb 25 °C Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Rev. 1.0, 05-Apr-13 SYMBOL VALUE VR 60 UNIT V PV 215 mW Tj 100 °C Tamb - 40 to + 100 °C Tstg - 40 to + 100 °C Acc. reflow solder profile fig. 7 Tsd 260 °C Acc. J-STD-051 RthJA 250 K/W Document Number: 84163 1 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD2503X01, VEMD2523X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL IF = 50 mA VF IR = 100 μA, E = 0 V(BR) VR = 10 V, E = 0 Iro Forward voltage Breakdown voltage Reverse dark current Diode capacitance Open circuit voltage MIN. TYP. MAX. UNIT 1 V 32 V 1 10 nA VR = 0 V, f = 1 MHz, E = 0 CD 4 VR = 5 V, f = 1 MHz, E = 0 CD 1.3 pF Ee = 1 mW/cm2,  = 950 nm Vo 350 mV mV/K pF Temperature coefficient of Vo Ee = 1 mW/cm2,  = 950 nm TKVo - 2.6 Short circuit current Ee = 1 mW/cm2,  = 950 nm Ik 10 μA Temperature coefficient of Ik Ee = 1 mW/cm2,  = 950 nm TKIk 0.1 %/K Ee = 1 mW/cm2,  = 950 nm, VR = 5 V Ira Reverse light current 7  Angle of half sensitivity 10 14 μA ± 35 deg Wavelength of peak sensitivity p 900 nm Range of spectral bandwidth 0.1 350 to 1120 nm Rise time VR = 10 V, RL = 1 k,  = 820 nm tr 100 ns Fall time VR = 10 V, RL = 1 k,  = 820 nm tf 100 ns BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 100 Ira - Reverse Light Current (µA) Iro - Reverse Dark Current (nA) 1000 100 10 VR = 10 V 1 20 94 8427 40 60 1 0.1 1 10 Ee - Irradiance (mW/cm2) Tamb - Ambient Temperature (°C) Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 3 - Reverse Light Current vs. Irradiance 8 1.4 CD - Diode Capacitance (pF) Ira, rel - Relative Reverse Light Current 10 0.1 0.01 100 80 VR = 5 V VR = 5 V λ = 950 nm 1.2 1.0 0.8 6 E=0 f = 1 MHz 4 2 0 0.6 0 94 8416 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.0, 05-Apr-13 0.1 94 8430 1 10 100 VR- Reverse Voltage (V) Fig. 4 - Diode Capacitance vs. Reverse Voltage Document Number: 84163 2 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD2503X01, VEMD2523X01 www.vishay.com Vishay Semiconductors 0° 10° 20° 30° 1.0 0.8 0.6 0.4 0.2 40° 1.0 0.9 50° 0.8 60° 70° ϕ - Angular Displacement Srel - Relative Radiant Sensitivity S (λ)rel - Relative Spectral Sensitivity 1.2 80° 0 400 500 600 700 800 900 1000 1100 Fig. 5 - Relative Spectral Sensitivity vs. Wavelength REFLOW SOLDER PROFILE 0.4 0.2 0 max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 max. 30 s 150 max. 100 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 0 0 19841 50 100 150 200 250 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. FLOOR LIFE Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label:  Floor life: 4 weeks  Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020. 200 max. 120 s Fig. 6 - Relative Radiant Intensity vs. Angular Displacement DRYPACK 300 Temperature (°C) 0.7 0.6 λ - Wavelength (nm) 21553 300 Time (s) DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020D Rev. 1.0, 05-Apr-13 Document Number: 84163 3 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD2503X01, VEMD2523X01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters: VEMD2503 Rev. 1.0, 05-Apr-13 Document Number: 84163 4 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD2503X01, VEMD2523X01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters: VEMD2523 Rev. 1.0, 05-Apr-13 Document Number: 84163 5 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD2503X01, VEMD2523X01 www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VEMD2503 Rev. 1.0, 05-Apr-13 Document Number: 84163 6 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD2503X01, VEMD2523X01 www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VEMD2523 Rev. 1.0, 05-Apr-13 Document Number: 84163 7 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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