VESD12A1A-HD1
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Vishay Semiconductors
ESD Protection Diode in LLP1006-2L
FEATURES
• Ultra compact LLP1006-2L package
• Low package height < 0.4 mm
1
2
• 1-line ESD protection
20856
• Low leakage current < 0.01 μA
• Low load capacitance CD = 22.5 pF
(VR = 6 V; f = 1 MHz)
20855
• ESD immunity acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
MARKING (example only)
• High surge current acc. IEC 61000-4-5 IPP > 8 A
• Soldering can be checked by standard vision inspection.
No X-ray necessary
XY
21121
• Pin plating NiPdAu (e4) no whisker growth
Bar = cathode marking
X = date code
Y = type code (see table below)
• e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn)
• PATENT(S): www.vishay.com/patents
DESIGN SUPPORT TOOLS
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
click logo to get started
Models
Available
ORDERING INFORMATION
DEVICE NAME
VESD12A1A-HD1
ORDERING CODE
TAPED UNITS PER REEL
(8 mm TAPE on 7" REEL)
MINIMUM ORDER QUANTITY
VESD12A1A-HD1-GS08
8000
8000
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
VESD12A1A-HD1
LLP1006-2L
TYPE
MOLDING COMPOUND
WEIGHT
FLAMMABILITY RATING
CODE
K
0.72 mg
UL 94 V-0
MOISTURE
SENSITIVITY LEVEL
SOLDERING CONDITIONS
MSL level 1
(according J-STD-020)
Peak temperature max. 260 °C
ABSOLUTE MAXIMUM RATINGS VESD12A1A-HD1
PARAMETER
TEST CONDITIONS
SYMBOL
Peak pulse current
Acc. IEC 61000-4-5; tP = 8/20 μs; single shot
IPPM
8
A
Peak pulse power
Acc. IEC 61000-4-5; tP = 8/20 μs; single shot
PPP
200
W
ESD immunity
Operating temperature
Storage temperature
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
VALUE
UNIT
± 30
kV
± 30
kV
TJ
-40 to +125
°C
Tstg
-55 to +150
°C
VESD
PATENT(S): www.vishay.com/patents
This Vishay product is protected by one or more United States and international patents.
Rev. 2.0, 14-Jan-2018
Document Number: 81879
1
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESD12A1A-HD1
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS VESD12A1A-HD1
(Tamb = 25 °C, unless otherwise specified)
PARAMETER
Protection paths
Reverse stand-off voltage
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Number of line which can be protected
Nchannel
-
-
1
lines
Max. reverse working voltage
VRWM
-
-
12
V
Reverse voltage
At IR = 0.1 μA
VR
12
-
-
V
Reverse current
At VR = 12 V
IR
-
< 0.01
0.1
μA
Reverse breakdown voltage
At IR = 1 mA
VBR
13.5
14
16
V
Reverse clamping voltage
Forward clamping voltage
Capacitance
At IPP = 1 A
VC
-
14.8
17
V
At IPP = IPPM = 8 A
VC
-
21
24
V
At IPP = 0.2 A
VF
-
0.85
1.2
V
At IPP = 1 A
VF
-
1.0
1.3
V
At IPP = IPPM = 8 A
VF
-
2.0
2.5
V
At VR = 0 V; f = 1 MHz
CD
-
54
65
pF
At VR = 6 V; f = 1 MHz
CD
-
22.5
-
pF
BiAs-MODE (bidirectional asymmetrical protection mode)
With the VESD12A1A-HD1 one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to
ground and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or
signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (VRWM) the protection diode
between data line and ground offers a high isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode
becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The
clamping voltage (VC) is defined by the breakthrough voltage (VBR) level plus the voltage drop at the series impedance
(resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of
the protection diode. The low forward voltage (VF) clamps the negative transient close to the ground level.
Due to the different clamping levels in forward and reverse direction the VESD12A1A-HD1 clamping behaviour is bidirectional
and asymmetrical (BiAs).
2
L1
1
BiAs
Ground
Rev. 2.0, 14-Jan-2018
20925
Document Number: 81879
2
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESD12A1A-HD1
www.vishay.com
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Axis Title
10000
120
100
Rise time = 0.7 ns to 1 ns
100
10
BiAs-mode
1000
60
53
40
1
IF (mA)
1st line
2nd line
2nd line
IESD (%)
80
0.1
100
27
0.01
20
0
10
-10 0
0.001
0.5
10 20 30 40 50 60 70 80 90 100
t (ns)
2nd line
20557
0.55 0.6
0.65 0.7
21289
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 /150 pF)
0.75 0.8
0.85
VF (V)
Fig. 4 - Typical Forward Current IF vs. Forward Voltage VF
Axis Title
10000
100
16
8 µs to 100 %
14
12
80
20 µs to 50 %
40
BiAs-mode
10
VR (V)
60
1st line
2nd line
2nd line
IPPM (%)
1000
8
6
100
4
20
2
0
10
0
10
20
30
t (µs)
2nd line
20548
0
0.01
40
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
1
10
100
1000 10 000
IR (µA)
Fig. 5 - Typical Reverse Voltage VR vs.
Reverse Current IR
25
60
Measured acc. IEC 61000-4-5
(8/20 µs - wave form)
f = 1 MHz
50
20
Reverse
40
BiAs-mode
VF/VC (V)
CD (pF)
0.1
21290
30
15
10
VC
20
5
10
Forward
0
0
0
2
21288
4
6
8
10
12
VR (V)
Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR
Rev. 2.0, 14-Jan-2018
0
21291
1
2
3
4
5
6
7
8
9
IPP (A)
Fig. 6 - Typical Clamping Voltage vs.
Peak Pulse Current IPP
Document Number: 81879
3
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESD12A1A-HD1
www.vishay.com
Vishay Semiconductors
70
60
Acc. IEC 61000-4-2
+ 8 kV
contact discharge
Reverse
50
40
VC-ESD (V)
30
20
10
0
-10
-20
-30
-40
-10 0
10 20 30 40 50 60 70 80 90
21292
t (ns)
Fig. 7 - Typical Clamping Performance at + 8 kV
Contact Discharge (acc. IEC 61000-4-2)
50
acc. IEC 61000-4-2
- 8 kV
contact discharge
forward
40
30
20
VC-ESD (V)
10
0
- 10
- 20
- 30
- 40
- 50
- 60
- 10 0
10 20 30 40 50 60 70 80 90
t (ns)
21293
Fig. 8 - Typical Clamping Performance at - 8 kV
Contact Discharge (acc. IEC 61000-4-2)
250
acc. IEC 61000-4-2
contact discharge
200
150
VC-ESD (V)
positive discharge
100
50
VC-ESD
0
- 50
- 100
negative discharge
- 150
- 200
0
21294
5
10
15
20
25
30
VESD (kV)
Fig. 9 - Typical Clamping Voltage at ± ESD
Contact Discharge (acc. IEC 61000-4-2)
Rev. 2.0, 14-Jan-2018
Document Number: 81879
4
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESD12A1A-HD1
www.vishay.com
Vishay Semiconductors
0.25 [0.010]
0.15 [0.006]
PACKAGE DIMENSIONS in millimeters (inches): LLP1006-2L
0.65 [0.026]
0.55 [0.022]
Orientation identification
0.05 [0.002]
0 [0.000]
0.4 [0.016]
0.33 [0.013]
0.45 [0.018]
0.35 [0.014]
0.125 [0.005] ref.
0.55 [0.022]
0.45 [0.018]
0.3 [0.012]
0.2 [0.008]
1.05 [0.041]
0.95 [0.037]
1 [0.039]
Solder
resist mask
0.2 [0.008]
0.5 [0.020]
0.6 [0.024]
Foot print recommendation:
Solder pad
0.5 [0.020]
0.05 [0.002]
0.25 [0.010]
Pad Design Patented:
( P US 9.018.537 B2)
Document no.: S8-V-3906.04-005 (4)
Rev. 7 - Date: 11.May 2016
20812
Unreeling direction
LLP1006-2X
Orientation
identification
Top view
S8-V-3906.04-017 (4)
02.05.2017
22965
Rev. 2.0, 14-Jan-2018
Pad layout - view from top
seen at bottom side
Document Number: 81879
5
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
1
Document Number: 91000