VESD12A1C-HD1-GS08

VESD12A1C-HD1 Vishay Semiconductors ESD-Protection Diode in LLP1006-2L Features • • • • • • Ultra compact LLP1006-2L package Low package height < 0.4 mm 1-line ESD-protection Low leakage current < 0.01 µA Low load capacitance CD = 12.5 pF (VR = 6 V; f = 1 MHz) ESD-protection acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge High surge current acc. IEC61000-4-5 IPP > 4 A Soldering can be checked by standard vision inspection. No X-ray necessary Lead (Pb)-free component Pin plating NiPdAu (e4) no whisker growth Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 1 20856 20855 • • • • • Marking (example only) XY 21121 Bar = Cathode marking X = Date code Y = Type code (see table below) Ordering Information Device name VESD12A1C-HD1 Ordering code VESD12A1C-HD1-GS08 Taped units per reel (8 mm tape on 7" reel) 8000 Minimum order quantity 8000 Package Data Device name VESD12A1C-HD1 Package name LLP1006-2L Type code G Weight 0.72 mg Molding compound flammability rating UL 94 V-0 Moisture sensitivity level MSL level 1 (according J-STD-020) Soldering conditions 260 °C/10 s at terminals Absolute Maximum Ratings Rating Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature Test conditions Acc. IEC 61000-4-5, tP = 8/20 µs/single shot Acc. IEC 61000-4-5, tP = 8/20 µs/single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Symbol IPPM PPP VESD VESD TJ TSTG Value 4 92 ± 30 ± 30 - 40 to + 125 - 55 to + 150 Unit A W kV kV °C °C * Please see document “Vishay Green and Halogen-Free Definitions (5-2008)” http://www.vishay.com/doc?99902 Document Number 81799 Rev. 1.2, 02-Sep-08 For technical support, please contact: ESD-Protection@vishay.com www.vishay.com 1 VESD12A1C-HD1 Vishay Semiconductors BiAs-Mode (Bidirectional Asymmetrical protection mode) With the VESD12A1C-HD1 one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified Maximum Reverse Working Voltage (VRWM) the protection diode between data line and ground offers a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The Clamping Voltage (VC) is defined by the BReakthrough Voltage (VBR) level plus the voltage drop at the series impedance (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low Forward Voltage (VF) clamps the negative transient close to the ground level. Due to the different clamping levels in forward and reverse direction the VESD12A1C-HD1 clamping behaviour is Bidirectional and Asymmetrical (BiAs). L1 2 1 20925 Electrical Characteristics Ratings at 25 °C, ambient temperature, unless otherwise specified VESD12A1C-HD1 BiAs mode (between pin 1 and pin 2) Parameter Protection paths Reverse stand off voltage Reverse current Reverse break down voltage Reverse clamping voltage at IPP = IPPM = 4 A at IPP = 0.2 A Forward clamping voltage at IPP = 1 A at IPP = IPPM = 4 A at VR = 0 V; f = 1 MHz Capacitance at VR = 6 V; f = 1 MHz CD 12.5 pF VC VF VF VF CD 20 0.9 1.1 1.7 30 23 1.2 1.5 2.1 36 V V V V pF Test conditions/remarks Number of lines which can be protected at IR = 0.1 µA at VR = 12 V at IR = 1 mA at IPP = 1 A Symbol Nlines VRWM IR VBR VC 13.5 12 < 0.01 14 15.8 0.1 16 17 Min. Typ. Max. 1 Unit lines V µA V V www.vishay.com 2 For technical support, please contact: ESD-Protection@vishay.com Document Number 81799 Rev. 1.2, 02-Sep-08 VESD12A1C-HD1 Vishay Semiconductors Typical Characteristics Tamb = 25 °C, unless otherwise specified 100 100 % 80 % 60 % 20 µs to 50 % 40 % 20 % 0% 0 20548 8 µs to 100 % 10 1 IF (mA) 40 IPPM 0.1 0.01 10 20 30 0.001 0.5 20679 0.6 0.7 0.8 0.9 Time (µs) VF (V) Figure 1. 8/20 µs Peak Pulse Current Wave Form (acc. IEC 61000-4-5) Figure 4. Typical Forward Current IF vs. Forward Voltage VF 120 % Rise time = 0.7 ns to 1 ns 100 % 80 % 16 14 12 Discharge Current IESD VR (V) 10 8 6 4 2 0 0.01 20680 60 % 53 % 40 % 27 % 20 % 0% - 10 0 10 20 30 40 50 60 70 80 90 100 20557 0.1 1 10 100 1000 10000 Time (ns) IR (µA) Figure 2. ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 Ω/150 pF) Figure 5. Typical Reverse Voltage VR vs. Reverse Current IR 35 f = 1 MHz 30 25 Measured acc. IEC 61000-4-5 (8/20 µs - wave form) 20 reverse 25 VF/VC (V) CD (pF) 20 15 10 15 10 5 5 0 0 1 2 3 4 5 6 7 8 9 10 11 12 20678 forward 0 0 20681 1 2 3 4 5 VR (V) IPP (A) Figure 3. Typical Capacitance CD vs. Reverse Voltage VR Figure 6. Typical Clamping Voltage vs. Peak Pulse Current IPP Document Number 81799 Rev. 1.2, 02-Sep-08 For technical support, please contact: ESD-Protection@vishay.com www.vishay.com 3 VESD12A1C-HD1 Vishay Semiconductors 60 reverse 50 40 acc. IEC 61000-4-2 + 8 kV contact discharge VC-ESD (V) 30 20 10 0 - 10 - 20 - 10 0 10 20 30 40 50 60 70 80 90 20683 t (ns) Figure 7. Typical Clamping Performance at + 8 kV Contact Discharge (acc. IEC 61000-4-2) 20 forward 10 0 acc. IEC 61000-4-2 - 8 kV contact discharge VC-ESD (V) - 10 - 20 - 30 - 40 - 50 - 10 0 10 20 30 40 50 60 70 80 90 20682 t (ns) Figure 8. Typical Clamping Performance at - 8 kV Contact Discharge (acc. IEC 61000-4-2) 200 150 100 acc. IEC 61000-4-2 contact discharge positive discharge (pin 2 to pin 1) VC-ESD (V) 50 VC-ESD 0 - 50 - 100 - 150 0 5 10 15 20 negative discharge (pin 1 to pin 2) 20684 VESD (kV) Figure 9. Typical Clamping Voltage at ± ESD Contact Discharge (acc. IEC 61000-4-2) www.vishay.com 4 For technical support, please contact: ESD-Protection@vishay.com Document Number 81799 Rev. 1.2, 02-Sep-08 VESD12A1C-HD1 Vishay Semiconductors Package Dimensions in millimeters (inches): LLP1006-2L 0.3 [0.012] 0.25 [0.010] 0.45 [0.018] 0.35 [0.014] 0.65 [0.026] 0.55 [0.022] 0.2 [0.008] 0.15 [0.006] 0.45 [0.018] 0.55 [0.022] Orientation identification 1.05 [0.041] 0.95 [0.037] foot print recommendation: 0.5 [0.020] solder resist mask 0.2 [0.008] 1 [0.039] 0.6 [0.024] 0.125 [0.005] ref. 0.05 [0.002] 0.33 [0.013] 0.4 [0.016] 0 [0.000] solder pad 0.05 [0.002] Document no.:S8-V-3906.04-005 (4) Created - Date: 13.July.2007 Rev. 4 - Date: 28.Aug.2008 20812 0.5 [0.020] 0.25 [0.010] soldermask opening +/-0,03 measured middle of the package Document Number 81799 Rev. 1.2, 02-Sep-08 For technical support, please contact: ESD-Protection@vishay.com www.vishay.com 5 VESD12A1C-HD1 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 6 For technical support, please contact: ESD-Protection@vishay.com Document Number 81799 Rev. 1.2, 02-Sep-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1