VIT3080CHM3/4W

VT3080C, VIT3080C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A FEATURES TMBS ® TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses K • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 2 3 1 1 2 3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS VT3080C VIT3080C PIN 1 PIN 2 PIN 1 PIN 2 PIN 3 CASE PIN 3 K For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ingp diode, and reserve battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM 80 V IFSM 150 A VF at IF = 15 A 0.65 V TJ max. 150 °C Package TO-220AB, TO-262AA Diode variation Common cathode Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) VRRM per device per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Operating junction and storage temperature range IF(AV) VT3080C VIT3080C 80 30 15 UNIT V A IFSM 150 A dV/dt 10 000 V/μs TJ, TSTG -55 to +150 °C Revision: 09-Nov-17 Document Number: 89241 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT3080C, VIT3080C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5 A IF = 7.5 A Instantaneous forward voltage per diode TA = 25 °C IF = 15 A VF (1) IF = 5 A IF = 7.5 A TA = 125 °C IF = 15 A VR = 80 V Reverse current per diode TA = 25 °C TA = 125 °C IR (2) TYP. MAX. 0.52 - 0.58 - 0.75 0.82 0.46 - UNIT V 0.52 - 0.65 0.70 30 700 μA 20 35 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL per diode Typical thermal resistance VT3080C 2.5 RJC per device VIT3080C UNIT °C/W 2.0 ORDERING INFORMATION (Example) PACKAGE UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB VT3080C-M3/4W PREFERRED P/N 1.89 4W 50/tube Tube TO-262AA VIT3080C-M3/4W 1.46 4W 50/tube Tube Revision: 09-Nov-17 Document Number: 89241 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT3080C, VIT3080C www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Instantaneous Reverse Current (mA) 35 Average Forward Current (A) Resistive or Inductive Load 30 25 20 15 10 5 0 0 25 75 50 100 125 150 175 10 TA = 125 °C 1 TA = 100 °C 0.1 TA = 25 °C 0.01 0.001 20 30 40 50 60 80 70 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics D = 0.8 D = 0.5 D = 0.3 12 Transient Thermal Impedance (°C/W) Average Power Loss (W) TA = 150 °C Case Temperature (°C) 14 D = 0.2 10 D = 1.0 D = 0.1 8 6 T 4 2 D = tp/T tp 0 0 2 4 6 8 10 12 14 16 18 10 Junction to Case 1 0.1 0.01 0.1 10 1 100 Average Forward Current (A) t - Pulse Duration (s) Fig. 2 - Forward Power Dissipation Characteristics Fig. 5 - Typical Transient Thermal Impedance 10 000 Junction Capacitance (pF) 100 Instantaneous Forward Current (A) 100 TA = 150 °C TA = 125 °C 10 TA = 100 °C 1 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 TA = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 10 0.1 1 10 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Junction Capacitance 100 Revision: 09-Nov-17 Document Number: 89241 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT3080C, VIT3080C www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) 0.380 (9.65) 0.185 (4.70) 0.175 (4.44) 0.161 (4.08) 0.139 (3.53) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.104 (2.65) 0.096 (2.45) 0.022 (0.56) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) TO-262AA 0.411 (10.45) 0.380 (9.65) 0.950 (24.13) 0.920 (23.37) 1 PIN 2 3 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.350 (8.89) 0.330 (8.38) 0.510 (12.95) 0.470 (11.94) 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.401 (10.19) 0.381 (9.68) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.35) Revision: 09-Nov-17 Document Number: 89241 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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