VIT3080S-E3/4W

VT3080S-E3, VFT3080S-E3, VBT3080S-E3, VIT3080S-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A FEATURES TMBS ® TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 3 1 1 2 3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 VFT3080S VT3080S PIN 1 PIN 2 PIN 1 PIN 3 CASE PIN 3 • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) PIN 2 TYPICAL APPLICATIONS TO-263AB TO-262AA For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. K K MECHANICAL DATA A NC 1 VBT3080S NC VIT3080S K HEATSINK A 2 PIN 1 PIN 2 PIN 3 K 3 Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: as marked PRIMARY CHARACTERISTICS IF(AV) 30 A VRRM 80 V IFSM 200 A VF at IF = 30 A 0.73 V TJ max. 150 °C Package TO-220AB, ITO-220AB, TO-263AB, TO-262AA Circuit configuration Single Mounting Torque: 10 in-lbs maximum        MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VT3080S VFT3080S VBT3080S VIT3080S UNIT Maximum repetitive peak reverse voltage VRRM 80 V Maximum average forward rectified current (fig. 1) IF(AV) 30 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 200 A Non-repetitive avalanche energy at TJ = 25 °C, L = 100 mH EAS 250 mJ Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C IRRM 1.0 A Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min VAC 1500 V TJ, TSTG -55 to +150 °C Operating junction and storage temperature range Revision: 16-Mar-18 Document Number: 89169 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT3080S-E3, VFT3080S-E3, VBT3080S-E3, VIT3080S-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Breakdown voltage IR = 1.0 mA TA = 25 °C SYMBOL TYP. MAX. UNIT VBR 80 (minimum) - V IF = 5 A IF = 15 A Instantaneous forward voltage TA = 25 °C IF = 30 A VF (1) IF = 5 A TA = 125 °C IF = 15 A IF = 30 A TA = 25 °C VR = 80 V Reverse current TA = 125 °C IR (2) 0.47 - 0.61 - 0.82 0.95 0.39 - V 0.57 - 0.73 0.82 70 1000 μA 23 45 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL VT3080S VFT3080S VBT3080S VIT3080S UNIT RJC 1.5 5.0 1.5 1.5 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB VT3080S-E3/4W 1.88 4W 50/tube Tube ITO-220AB VFT3080S-E3/4W 1.75 4W 50/tube Tube TO-263AB VBT3080S-E3/4W 1.37 4W 50/tube Tube TO-263AB VBT3080S-E3/8W 1.37 8W 800/reel Tape and reel TO-262AA VIT3080S-E3/4W 1.46 4W 50/tube Tube Revision: 16-Mar-18 Document Number: 89169 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT3080S-E3, VFT3080S-E3, VBT3080S-E3, VIT3080S-E3 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Average Forward Current (A) Resistive or Inductive Load Instantaneous Reverse Current (mA) 35 V(B,I)T3080S 30 25 20 VFT3080S 15 10 5 Mounted on Specific Heatsink 0 0 25 75 50 100 125 150 175 TA = 125 °C 10 TA = 100 °C 1 0.1 TA = 25 °C 0.01 0.001 20 30 50 40 60 90 Fig. 4 - Typical Reverse Characteristics Junction Capacitance (pF) D = 0.2 20 D = 1.0 D = 0.1 15 T 10 5 D = tp/T 10 15 20 25 1000 tp 100 0.1 0 5 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p D = 0.8 D = 0.3 25 30 35 1 10 100 Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance 100 TA = 150 °C TA = 125 °C TA = 100 °C 1 TA = 25 °C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Transient Thermal Impedance (°C/W) Average Forward Current (A) 10 100 Case Temperature (°C) 10 000 0 80 70 Fig. 1 - Forward Current Derating Curve D = 0.5 Average Power Loss (W) TA = 150 °C Percent of Rated Peak Reverse Voltage (%) 30 Instantaneous Forward Current (A) 100 10 Junction to Case VFT3080S V(B,I)T3080S 1 0.1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 16-Mar-18 Document Number: 89169 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT3080S-E3, VFT3080S-E3, VBT3080S-E3, VIT3080S-E3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) 0.380 (9.65) 0.185 (4.70) 0.175 (4.44) 0.161 (4.08) 0.139 (3.53) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.603 (15.32) 0.573 (14.55) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) Revision: 16-Mar-18 Document Number: 89169 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT3080S-E3, VFT3080S-E3, VBT3080S-E3, VIT3080S-E3 www.vishay.com Vishay General Semiconductor TO-262AA 0.411 (10.45) 0.380 (9.65) 0.950 (24.13) 0.920 (23.37) 1 PIN 2 3 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.401 (10.19) 0.381 (9.68) 0.350 (8.89) 0.330 (8.38) 0.510 (12.95) 0.470 (11.94) 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.022 (0.56) 0.014 (0.35) Mounting Pad Layout 0.42 (10.66) MIN. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) MIN. 0.360 (9.14) 0.320 (8.13) NC K A 0.624 (15.85) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 16-Mar-18 Document Number: 89169 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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