VS-25F60

VS-25F(R) Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, (Stud Version), 25 A FEATURES • High surge current capability • Stud cathode and stud anode version • Wide current range • Types up to 1200 V VRRM • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DO-4 (DO-203AA) TYPICAL APPLICATIONS • Battery charges PRIMARY CHARACTERISTICS • Converters IF(AV) 25 A Package DO-4 (DO-203AA) Circuit configuration Single • Power supplies • Machine tool controls MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) TC IF(RMS) IFSM I2t VRRM VALUES UNITS 25 A 120 °C 40 A 50 Hz 356 60 Hz 373 A 50 Hz 636 60 Hz 580 Range 100 to 1200 V -65 to +175 °C IRRM MAXIMUM AT TJ = 175 °C mA TJ A2s ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-25F(R) VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 10 100 150 20 200 275 40 400 500 60 600 725 80 800 950 100 1000 1200 120 1200 1400 12 Revision: 11-Jan-18 Document Number: 93506 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25F(R) Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current  at case temperature Maximum RMS forward current IF(AV) TEST CONDITIONS 180° conduction, half sine wave IF(RMS) t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current VALUES IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms No voltage reapplied A 120 °C 40 A 356 No voltage reapplied 100 % VRRM reapplied UNITS 25 373 A 300 Sinusoidal half wave, initial TJ = TJ maximum 314 636 580 100 % VRRM reapplied A2s 450 410 t = 0.1 to 10 ms, no voltage reapplied 6360 Low level value of threshold voltage VF(TO)1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 0.80 High level value of threshold voltage VF(TO)2 (I >  x IF(AV)), TJ = TJ maximum 0.90 A2s V Low level value of forward  slope resistance rf1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 6.80 High level value of forward  slope resistance rf2 (I >  x IF(AV)), TJ = TJ maximum 5.70 Ipk = 78 A, TJ = 25 °C, tp = 400 μs rectangular wave 1.30 V VALUES UNITS m Maximum forward voltage drop VFM THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range TEST CONDITIONS TJ -65 to +175 Maximum storage temperature range TStg -65 to +200 Maximum thermal resistance, junction to case RthJC DC operation 1.5 Maximum thermal resistance,  case to heat sink RthCS Mounting surface, smooth, flat and greased 0.5 °C K/W Not lubricated threads 1.5 + 0 - 10 % (13) N·m (lbf · in) Lubricated threads 1.2 + 0 - 10 % (10) N·m (lbf · in) Allowable mounting torque Approximate weight Case style See dimensions - link at the end of datasheet 7 g 0.25 oz. DO-4 (DO-203AA) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.28 0.24 120° 0.39 0.41 90° 0.50 0.54 60° 0.73 0.75 30° 1.20 1.21 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 11-Jan-18 Document Number: 93506 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25F(R) Series Vishay Semiconductors 180 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) www.vishay.com 25F(R) Series RthJC (DC) = 1.5 K/W 170 160 150 Conduction Angle 140 130 120 90° 60° 110 120° 180° 30° 100 0 5 10 15 20 25 180 25F(R) Series RthJC (DC) = 1.5 K/W 170 160 150 Conduction Period 140 130 120 90° 60° 110 180° DC 100 30 0 5 Average Forward Current (A) 10 15 20 25 30 35 40 45 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 35 SA =1 W K/ aR elt -D RMS Limit R th 20 3 K/ W 4K /W W K/ 25 180° 120° 90° 60° 30° 30 2 Maximum Average Forward Power Loss (W) 120° 30° 6K /W 8K /W 15 12 K /W Conduction Angle 10 20 K/W 25F(R) Series TJ = 175°C 5 40 K/W 0 0 5 10 15 20 25 30 0 Average Forward Current (A) 25 50 75 100 125 150 175 Maximum Allowable Ambient Temperature (°C) Maximum Average Forward Power Loss (W) Fig. 3 - Forward Power Loss Characteristics 25 DC 180° 120° 90° 60° 30° 20 15 R 6K /W th SA = RMS Limit 8K /W 4K /W -D elt aR 10 K /W 15 K/W 10 20 K/W Conduction Period 30 K/W 5 16F(R) Series TJ = 175°C 0 0 5 10 15 20 25 Average Forward Current (A) 30 0 25 50 75 100 Maximum Allowable Ambient Temperature (°C) Fig. 4 - Forward Power Loss Characteristics Revision: 11-Jan-18 Document Number: 93506 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25F(R) Series 350 Vishay Semiconductors 1000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 175°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 300 250 Instantaneous Forward Current (A) Peak Half Sine Wave Forward Current (A) www.vishay.com 200 150 100 25F(R) Series 100 TJ = 25°C TJ = 175°C 10 25F(R) Series 1 50 1 10 0 100 0.5 350 300 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 175°C No Voltage Reapplied Rated VRRM Reapplied 250 200 150 100 50 0 0.01 25F(R) Series 0.1 1 1.5 2 2.5 3 3.5 4 Fig. 7 - Forward Voltage Drop Characteristics Transient Thermal Impedance ZthJC (K/W) Peak Half Sine Wave Forward Current (A) Fig. 5 - Maximum Non-Repetitive Surge Current 400 1 Instantaneous Forward Voltage (V) Number Of Equal Amplitude Half Cycle Current Pulses (N) 10 10 Steady State Value RthJC = 1.5 K/W (DC Operation) 1 25F(R) Series 0.1 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Pulse Train Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current ORDERING INFORMATION TABLE Device code VS- 25 F R 120 M 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating: code = IF(AV) 3 - F = standard device 4 - 5 - None = stud normal polarity (cathode to stud) R = stud reverse polarity (anode to stud) Voltage code x 10 = VRRM (see Voltage Ratings table) 6 - None = stud base DO-4 (DO-203AA) 10-32UNF-2A M = stud base DO-4 (DO-203AA) M5 X 0.8 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95311 Revision: 11-Jan-18 Document Number: 93506 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors DO-203AA (DO-4) DIMENSIONS in millimeters (inches) + 0.3 0 + 0.01 (0.08 0) 0.8 ± 0.1 (0.03 ± 0.004) 3.30 (0.13) 4.00 (0.16) 2 5.50 (0.22) MIN. R 0.40 R (0.02) Ø 1.80 ± 0.20 (Ø 0.07 ± 0.01) 20.30 (0.80) MAX. Ø 6.8 (0.27) 10.20 (0.40) MAX. 3.50 (0.14) 11.50 (0.45) 10.70 (0.42) 10/32" UNF-2A For metric devices: M5 x 0.8 11 (0.43) Document Number: 95311 Revision: 30-Jun-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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