VS-E5TX3006THN3

VS-E5TX3006THN3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt® G5 FEATURES Base cathode 2 • Best in class forward voltage drop and switching losses trade off 2 • Optimized for high speed operation • 175 °C maximum operating junction temperature 1 • Polyimide passivation 3 TO-220AC 2L 1 Cathode 3 Anode • AEC-Q101 qualified, meets JESD 201 class 2 whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES DESCRIPTION / APPLICATIONS 3D 3D 3D Models Featuring a unique combination of low conduction and switching losses, this rectifier is the right choice for soft switched and resonant converters, as well as medium frequency hard switching converters. This device is specifically designed to improve efficiency of high speed LLC output rectification stages of EV / HEV on-board battery chargers Application Notes PRIMARY CHARACTERISTICS IF(AV) 30 A VR 600 V VF at IF at 125 °C 1.3 V TJ max. 175 °C trr (typ.) 22 ns Package TO-220AC 2L Circuit configuration Single MECHANICAL DATA Case: TO-220AC 2L Molding compound meets UL 94 V-0 flammability rating Terminals: J-STD-002 matte tin plated leads, solderable per ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Repetitive peak reverse voltage VRRM Average rectified forward current IF(AV) TC = 106 °C, D = 0.50 30 Non-repetitive peak surge current IFSM TC = 25 °C, tp = 10 ms, sine wave 310 IFRM TC = 106 °C, D = 0.50, f = 20 kHz Repetitive peak forward current Operating junction and storage temperature TJ, TStg A 60 -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR Forward voltage VF Reverse leakage current IR Junction capacitance CT Series inductance LS TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 30 A - 1.6 2.1 IF = 30 A, TJ = 125 °C - 1.3 - IR = 100 μA UNITS V VR = VR rated - - 20 TJ = 125 °C, VR = VR rated - - 500 VR = 200 V - 36 - pF Measured to lead 5 mm from package body - 8 - nH μA Revision: 18-May-2022 Document Number: 96827 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5TX3006THN3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time Peak recovery current SYMBOL trr IRRM Reverse recovery charge Qrr Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge Qrr TEST CONDITIONS MIN. TYP. MAX. IF = 1.0 A,dIF/dt = 100 A/μs, VR = 30 V - 22 - TJ = 25 °C - 39 - TJ = 125 °C - 50 - - 14 - - 24 - TJ = 25 °C - 253 - TJ = 125 °C - 785 - TJ = 25 °C TJ = 125 °C IF = 20 A dIF/dt = 1000 A/μs VR = 400 V UNITS ns A nC TJ = 25 °C - 41 - TJ = 125 °C - 56 - - 16 - - 27 - TJ = 25 °C - 306 - TJ = 125 °C - 952 - MIN. TYP. MAX. UNITS - - 1.3 °C/W - 2.0 - g - 12 (10) kgf · cm (lbf · in) - 175 °C TJ = 25 °C TJ = 125 °C IF = 30 A dIF/dt = 1000 A/μs VR = 400 V ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Thermal resistance, junction-to-case SYMBOL TEST CONDITIONS RthJC Weight 6 (5) Mounting torque Maximum junction and storage temperature range Marking device TJ, TStg -55 Case style: TO-220AC 2L E5TX3006TH Revision: 18-May-2022 Document Number: 96827 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5TX3006THN3 Vishay Semiconductors 1000 CT - Junction Capacitance (pF) 100 100 TJ = 175°C 10 TJ = 125 °C TJ = 25 °C TJ = -40 °C 1 10 0 0.5 1.0 1.5 2.0 2.5 0 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1000 TJ = 175 °C IR - Reverse Current (µA) 100 VF - Forward Voltage Drop (V) Allowable Solder Pad Temperature (°C) IF - Instantaneous Forward Current (A) www.vishay.com 100 TJ = 125 °C 10 1 TJ = 25 °C 0.1 0.01 0.001 0 100 200 300 400 500 600 180 170 160 150 140 DC 130 120 110 Square wave (D = 0.50) rated VR applied 100 90 80 0 5 VR - Reverse Voltage (V) 10 15 20 25 30 35 IF(AV) - Average Forward Current (A) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Average Power Loss (W) 70 RMS limit 60 50 40 D = 0.01 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 30 20 10 0 0 5 10 15 20 25 30 35 40 45 50 IF(AV) - Average Forward Current (A) Fig. 5 - Average Power Loss vs. Average Forward Current Revision: 18-May-2022 Document Number: 96827 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5TX3006THN3 www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 0.50 0.20 0.10 0.05 0.02 0.01 0.1 DC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 6 - Thermal Impedance ZthJC - Characteristics 35 160 TJ = 125 °C TJ = 125 °C, VR = 400 V 150 140 130 110 IF = 30 A 100 IF = 30 A 25 IF = 60 A Irr (A) trr (ns) 120 IF = 60 A VR = 400 V 30 20 90 15 80 IF = 15 A 70 60 10 IF = 15 A 50 5 40 100 100 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt 1500 300 1400 TJ = 125 °C 1300 VR = 400 V IF = 60 A In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating 250 1200 1100 200 1000 IF = 30 A 900 trr (ns) Qrr (nC) 1000 800 700 125 °C 150 25 °C 100 600 IF = 15 A 500 50 400 IF = 30 A, VR = 400 V, low dI/dt 300 0 100 1000 0 20 40 60 80 100 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 8 - Typical Reverse Recovery Charge vs. dIF/dt Fig. 10 - Typical Reverse Recovery Time vs. dIF/dt Revision: 18-May-2022 Document Number: 96827 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5TX3006THN3 www.vishay.com Vishay Semiconductors 600 10 In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating 500 8 In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating 6 IF = 30 A, VR = 400 V, low dI/dt 125 °C Irr (A) Qrr (nC) 400 300 200 4 125 °C IF = 30 A, VR = 400 V, low dI/dt 25 °C 2 100 25 °C 0 0 0 20 40 60 80 100 0 20 40 60 80 100 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 11 - Typical Reverse Recovery Charge vs. dIF/dt Fig. 12 - Typical Reverse Recovery Current vs. dIF/dt (3) trr ta IF tb t0 t10 % 0 0.1 IRRM (2) IRRM Qrr (4) di(rec)M/dt (5) (1) diF/dt Fig. 13 - Reverse Recovery Waveform and Definitions Notes (1) di /dt - rate of change of current through zero crossing F (2) I RRM - peak reverse recovery current (3) t - reverse recovery time measured from t , crossing point of negative going I , to point t rr 0 F 10%, 0.1 IRRM (4) Q - area under curve defined by t and t rr 0 10 % t 10 % Q rr =  I ( t ) dt t0 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Revision: 18-May-2022 Document Number: 96827 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5TX3006THN3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- E 5 T X 30 06 T H N3 1 2 3 4 5 6 7 8 9 10 1 - Vishay Semiconductors product 2 - E = single diode 3 - 5 = FRED generation 5 4 - Package: T = TO-220AC 2L 5 - X = hyperfast recovery 6 - Current rating (30 = 30 A) 7 - Voltage rating (06 = 600 V) 8 - T = true pin TO-220 9 - H = AEC-Q101 qualified 10 - Environmental digit: N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-E5TX3006THN3 QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96069 Part marking information www.vishay.com/doc?95391 SPICE model www.vishay.com/doc?96918 Revision: 18-May-2022 Document Number: 96827 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-220AC 2L DIMENSIONS in millimeters and inches (6) B Seating plane A E A ØP 0.014 M B A M E2 (7) A Thermal pad E A1 Q (6) H1 (7) (6) D H1 D2 (6) Detail B D1 1 2 (2) L1 C E1 (6) 1 2 L D C Base metal D C L1 (2) A b1, b3 (4) Section C - C and D - D View A - A A2 Plating c1 (4) c c 2 x b 2 x b2 Detail B e1 (b, b2) 0.015 M B A M SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 E1 A1 1.14 1.40 0.045 0.055 E2 - 0.76 A2 2.56 2.92 0.101 0.115 e1 4.88 5.28 b 0.69 1.01 0.027 0.040 b1 0.38 0.97 0.015 0.038 b2 1.20 1.73 0.047 0.068 b3 1.14 1.73 0.045 0.068 INCHES MAX. MIN. MAX. 6.86 8.89 0.270 0.350 6 - 0.030 7 0.192 0.208 H1 5.84 6.86 0.230 0.270 4 L 13.52 14.02 0.532 0.552 L1 3.32 3.82 0.131 0.150 4 ØP 3.54 3.73 0.139 0.147 Q 2.60 3.00 0.102 0.118 c 0.36 0.61 0.014 0.024 c1 0.36 0.56 0.014 0.022 4 3 D 14.85 15.25 0.585 0.600 D1 8.38 9.02 0.330 0.355 D2 11.68 12.88 0.460 0.507 6 E 10.11 10.51 0.398 0.414 3, 6 NOTES MIN. 6, 7 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC® TO-220, except D2, where JEDEC® minimum is 0.480" Revision: 14-Mar-2022 Document Number: 96069 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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