SS24

SS22 - SS215 2.0 AMPS. Surface Mount Schottky Barrier Rectifiers SMB/DO-214AA .083(2.10) .077(1.95) .147(3.73) .137(3.48) Features For surface mounted application Easy pick and place Metal to silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low VF High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial construction High temperature soldering: 260oC / 10 seconds at terminals .187(4.75) .167(4.25) .012(.31) .006(.15) .103(2.61) .078(1.99) .012(.31) .006(.15) .056(1.41) .035(0.90) .209(5.30) .201(5.10) .008(.20) .004(.10) Mechanical Data Case: Molded plastic Terminals: Pure tin plated, lead free. Polarity: Indicated by cathode band Packaging: 12mm tape per EIA STD RS-481 W eight: 0.093gram Dimensions in inches and (millimeters) Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol SS SS SS SS Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TL(See Fig. 1) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage (Note 1) IF= 2.0A @ 25oC @ 100oC o Maximum DC Reverse Current @ TA =25 C at o Rated DC Blocking Voltage @ TA=125 C Typical Junction Capacitance (Note 3) Typical Thermal Resistance ( Note 2 ) Operating Temperature Range Storage Temperature Range Notes: Maximum Ratings and Electrical Characteristics SS 26 60 42 60 SS 29 90 63 90 SS 210 100 70 100 SS Units 215 150 V 105 V 150 V A A 0.85 0.95 0.70 0.80 0.1 5.0 V mA mA pF o VRRM VRMS VDC I(AV) IFSM VF IR Cj R θJL R θJA TJ 22 20 14 20 23 30 21 30 24 40 28 40 25 50 35 50 2.0 50 0.5 0.4 0.4 10 130 17 75 -65 to +125 -65 to +150 -65 to +150 0.70 0.65 C/W o o TSTG 1. Pulse Test with PW=300 usec, 1% Duty Cycle 2. Measured on P.C.Board with 0.4” x 0.4”(10mm x 10mm) Copper Pad Areas. 3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. C C - 40 - Version: B07 R ATINGSAND CHARACTERISTIC CURVES (SS22 THRU SS215) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 2.0 FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT. (A) 50 8.3ms Single Half Sine Wave JEDEC Method AT RATED TL AVERAGE FORWARD CURRENT. (A) RESISTIVE OR INDUCTIVE LOAD 1.5 SS22-SS24 SS25-SS215 40 30 1.0 20 0.5 PCB MOUNTED ON 0.2X0.2" (5.0X5.0mm) COPPER PAD AREAS 0 LEAD TEMPERATURE. ( C) O 10 0 1 10 NUMBER OF CYCLES AT 60Hz 100 FIG.4-TYPICALREVERSE CHARACTERISTICS FIG.3- TYPICAL FORWARD CHARACTERISTICS 50 100 SS22-SS24 SS25-SS215 TJ=125 C 10 O TJ=25 C O INSTANTANEOUS FORWARD CURRENT. (A) 10 SS25-SS26 INSTANTANEOUS REVERSE CURRENT. (mA) SS22-SS24 1 1 TJ=75 C O SS29-SS210 0.1 0.1 SS215 0.01 TJ=25 C O PULSE WIDTH=300 S 1% DUTY CYCLE 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FORWARD VOLTAGE. (V) FIG.5-TYPICAL JUNCTION CAPACITANCE TRANSIENT THERMAL IMPEDANCE. (OC/W) 400 FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS 100 JUNCTION CAPACITANCE.(pF) Tj=25 C f=1.0MHz Vsig=50mVp-p 100 O 10 1 10 0.1 SS29-SS215 SS22-SS24 SS25-SS26 1 10 100 0.1 0.01 0.1 1 T, PULSE DURATION. (sec) 10 100 REVERSE VOLTAGE. (V) Version: B07