TSB1184_1

TSB1184 Low Vcesat PNP Transistor TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO BVCEO IC VCE(SAT) -40V -30V -3A -0.3V @ IC / IB = -2A / -100mA Features ● ● Low VCE(SAT) -0.3V @ IC / IB = -2A / -100mA (Typ.) Excellent DC current gain characteristics Ordering Information Part No. TSB1184CP RO Package TO-252 Packing 2.5Kpcs / 13” Reel Structure ● ● Epitaxial Planar Type PNP Silicon Transistor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: Single pulse, Pw=10ms DC Pulse Ta=25ºC Tc=25ºC Symbol VCBO VCEO VEBO IC PD TJ TSTG Limit -4 0 -3 0 -6 -3 -7 (note) 1 5 +150 - 55 to +150 Unit V V V A W o o C C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Conditions IC = -50uA, IE = 0 IC = -1mA, IB = 0 IE = -50uA, IC = 0 VCB = -40V, IE = 0 VEB = -4V, IC = 0 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(SAT) *hFE fT Cob Min -4 0 -3 0 -6 ---120 --- Typ ------0.3 -80 55 Max ----1 -1 -0.5 560 --- Unit V V V uA uA V IC / IB = -2A / -200mA VCE = -2V, IC = -100mA VCE =-5V, IC=-100mA, Transition Frequency f=30MHz Output Capacitance VCB = -10V, f=1MHz * Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2% MHz pF 1 /4 Version: A08 TSB1184 Low Vcesat PNP Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic Figure 3. VBE(SAT) v.s. Ic Figure 4. Power Derating Curve 2 /4 Version: A08 TSB1184 Low Vcesat PNP Transistor TO-252 Mechanical Drawing TO-252 DIMENSION DIM A A1 B C D E F G G1 G2 H I J K L M MILLIMETERS MIN MAX 2.3BSC 4.6BSC 6.80 5.40 6.40 2.20 0.00 5.20 0.75 0.55 0.35 0.90 2.20 0.50 0.90 1.30 7.20 5.60 6.65 2.40 0.20 5.40 0.85 0.65 0.65 1.50 2.80 1.10 1.50 1.70 INCHES MIN M AX 0.09BSC 0.18BSC 0.268 0.213 0.252 0.087 0.000 0.205 0.030 0.022 0.014 0.035 0.087 0.020 0.035 0.051 0.283 0.220 0.262 0.094 0.008 0.213 0.033 0.026 0.026 0.059 0.110 0.043 0.059 0.67 ˙ 3 /4 Version: A08 TSB1184 Low Vcesat PNP Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4 /4 Version: A08