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CNY70_08

CNY70_08

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    CNY70_08 - Reflective Optical Sensor with Transistor Output - Vishay Siliconix

  • 数据手册
  • 价格&库存
CNY70_08 数据手册
CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description The CNY70 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light. Marking area E D Features • • • • • • • • • • Package type: Leaded Detector type: Phototransistor Dimensions: L 7 mm x W 7 mm x H 6 mm e4 Peak operating distance: < 0.5 mm Operating range: 0 mm to 4.5 mm Typical output current under test: IC = 1 mA Daylight blocking filter Emitter wavelength 950 nm Lead (Pb)-free soldering released Lead (Pb)-free component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC • Minimum order quantity 4000 pcs in tubes, 80 pcs/tube Top view 19158 Applications Optoelectronic scanning and switching devices i.e., index sensing, coded disk scanning etc. (optoelectronic encoder assemblies). Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Coupler Parameter Total power dissipation Ambient temperature range Storage temperature range Soldering temperature Distance to case 2 mm, t ≤ 5 s Test condition Tamb ≤ 25 °C Symbol Ptot Tamb Tstg Tsd Value 200 - 40 to + 85 - 40 to + 100 260 Unit mW °C °C °C Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature tp ≤ 10 µs Tamb ≤ 25°C Test condition Symbol VR IF IFSM PV Tj Value 5 50 3 100 100 Unit V mA A mW °C Document Number 83751 Rev. 1.6, 04-Sep-06 www.vishay.com 1 CNY70 Vishay Semiconductors Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Power dissipation Junction temperature Tamb ≤ 25 °C Test condition Symbol VCEO VECO IC PV Tj Value 32 7 50 100 100 Unit V V mA mW °C 300 P - Power Dissipation (mW) Coupled device 200 Phototransistor 100 IR - diode 0 0 95 11071 25 50 75 100 Tamb - Ambient Temperature (°C) Figure 1. Power Dissipation Limit vs. Ambient Temperature Electrical Characteristics Tamb = 25 °C, unless otherwise specified Coupler Parameter Collector current Cross talk current Collector emitter saturation voltage 1) 2) Test condition VCE = 5 V, IF = 20 mA, d = 0.3 mm (figure 2) VCE = 5 V, IF = 20 mA (figure 1) IF = 20 mA, IC = 0.1 mA, d = 0.3 mm (figure 2) Symbol IC1) ICX2) VCEsat1) Min 0.3 Typ. 1.0 Max Unit mA 600 0.3 nA V Measured with the ‘Kodak neutral test card", white side with 90 % diffuse reflectance Measured without reflecting medium Input (Emitter) Parameter Forward voltage Radiant intensity Peak wavelength Virtual source diameter Test condition IF = 50 mA IF = 50 mA, tP = 20 ms IF = 100 mA Method: 63 % encircled energy Symbol VF Ie λP Ø 940 1.2 Min Typ. 1.25 Max 1.6 7.5 Unit V mW/sr nm mm Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector dark current Test condition IC = 1 m A IE = 100 µA VCE = 20 V, If = 0, E = 0 Symbol VCEO VECO ICEO Min 32 5 200 Typ. Max Unit V V nA www.vishay.com 2 Document Number 83751 Rev. 1.6, 04-Sep-06 CNY70 Vishay Semiconductors Reflecting medium (Kodak neutral test card) ~ ~ ~ d ~ ~ ~ Detector Emitter A C E C 95 10893 Figure 2. Test Condition Typical Characteristics Tamb = 25 °C unless otherwise specified 1000 IC - Collector Current (mA) 10 Kodak neutral card (white side) d = 0.3 mm VCE = 5 V I F - Forward Current (mA) 100 1 10 0.1 1 0.01 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 96 11862 0.001 0.1 95 11065 1 10 100 V F - Forward Voltage (V) I F - Forward Current (mA) Figure 3. Forward Current vs. Forward Voltage Figure 5. Collector Current vs. Forward Current CTR rel - Relative Current Transfer Ratio 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 - 30 - 20 -10 0 10 20 30 40 50 60 70 80 Tamb - Ambient Temperature (°C) 10 I C - Collector Current (mA) V =5V CE I F = 20 mA d = 0.3 mm Kodak neutral card (white side) d = 0.3 mm I F = 50 mA 20 mA 10 mA 1 0.1 5 mA 2 mA 0.01 1 mA 0.001 0.1 1 10 100 96 11913 95 11066 VCE - Collector Emitter Voltage (V) Figure 4. Relative Current Transfer Ratio vs. Ambient Temperature Document Number 83751 Rev. 1.6, 04-Sep-06 Figure 6. Collector Current vs. Collector Emitter Voltage www.vishay.com 3 CNY70 Vishay Semiconductors 100 10 I C - Collector Current (mA) CTR - Current Transfer Ratio (%) Kodak neutral card (white side) d = 0.3 mm V CE = 5 V 10 1 d 1 0.1 V CE = 5 V I F = 20 mA 0.001 0 2 4 6 8 10 0.1 0.1 96 11914 1 10 100 I F - Forward Current (mA) 95 11069 d - Distance (mm) Figure 7. Current Transfer Ratio vs. Forward Current Figure 9. Collector Current vs. Distance 10 CTR - Current Transfer Ratio (%) I F =50 mA 0° 10° 20° 30° I erel - Relative Radiant Intensity Icrel - Relative Collector Current 1 mA 1 5 mA 2 mA Kodak neutral card (white side) d = 0.3 mm 0.1 0.1 20 mA 10 mA 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 96 12001 100 1 10 V CE - Collector Emitter Voltage (V) 95 11063 Figure 8. Current Transfer Ratio vs. Collector Emitter Voltage Figure 10. Relative Radiant Intensity/Collector Current vs. Angular Displacement 1.0 I Crel - Relative Collector Current 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 96 11915 d = 5 mm 4 mm 3 mm 2 mm 1 mm 0 VCE = 5 V I F = 20 mA E 1.5 D d E D 0 s 5 mm 10 mm 0 s 5 mm 10 mm 1 2 3 4 5 6 7 8 9 10 11 s - Displacement (mm) Figure 11. Relative Collector Current vs. Displacement www.vishay.com 4 Document Number 83751 Rev. 1.6, 04-Sep-06 CNY70 Vishay Semiconductors Package Dimensions 95 11345 Tube Dimensions 20291 Document Number 83751 Rev. 1.6, 04-Sep-06 www.vishay.com 5 CNY70 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 6 Document Number 83751 Rev. 1.6, 04-Sep-06 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
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