SI2328DS-T1-E3

Si2328DS Vishay Siliconix N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 FEATURES ID (A) 1.5 rDS(on) (W) 0.250 @ VGS = 10 V D 100% Rg Tested TO-236 (SOT-23) G 1 3 D S 2 Top View Si2328DS (D8)* *Marking Code Ordering Information: Si2328DS-T1 Si2328DS-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb Avalanche Currentb Single Avalanche Energy Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C L = 0 1 mH 0.1 TA= 25_C TA= 70_C Symbol VDS VGS ID IDM IAS EAS IS PD TJ, Tstg 5 sec 100 "20 1.5 1.2 6 6 1.8 0.6 1.25 0.80 Steady State Unit V 1.15 0.92 A mJ A 0.73 0.47 W _C −55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Document Number: 71796 S-41259—Rev. C, 05-Jul-04 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 80 130 45 Maximum 100 170 55 Unit _C/W 1 Si2328DS Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VGS = 0 V, ID = 1 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 100 V, VGS = 0 V VDS = 100 V, VGS = 0 V, TJ = 70_C VDS w 15 V, VGS = 10 V VGS = 10 V, ID = 1.5 A VDS = 15 V, ID = 1.5 A IS = 1.0 A, VGS = 0 V 6 0.195 4 0.8 1.2 0.250 100 2 4 "100 1 75 V nA mA A W S V Symbol Test Conditions Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Qg Qgs Qgd Rg 0.5 VDS = 50 V, VGS = 10 V, ID = 1.5 A 3.3 0.47 1.45 2.4 W 4.0 nC Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Source-Drain Reverse Recovery Time td(on) tr td(off) tf trr IF = 1.5 A, di/dt = 100 A/ms VDD = 50 V, RL = 33 W V, ID ^ 0.2 A, VGEN = 10 V, Rg = 6 W 7 11 9 10 50 11 17 15 15 100 ns ns Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 12 VGS = 10, 9, 8 V 9 I D − Drain Current (A) 6V 6 I D − Drain Current (A) 7V 12 Transfer Characteristics 9 6 3 3, 2, 1 V 0 0 2 4 6 8 5V 3 TC = 125_C 25_C 4V 0 10 0 2 −55_C 4 6 8 VDS − Drain-to-Source Voltage (V) www.vishay.com VGS − Gate-to-Source Voltage (V) Document Number: 71796 S-41259—Rev. C, 05-Jul-04 2 Si2328DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.6 r DS(on) − On-Resistance ( W ) 0.5 0.4 VGS = 10 V 0.3 0.2 0.1 0.0 0 3 6 ID − Drain Current (A) 9 12 C − Capacitance (pF) 250 Capacitance 200 Ciss 150 100 50 Crss 0 20 40 Coss 0 60 80 100 VDS − Drain-to-Source Voltage (V) Gate Charge 20 V GS − Gate-to-Source Voltage (V) VDS = 50 V ID = 1.5 A 16 rDS(on) − On-Resiistance (Normalized) 2.0 2.5 On-Resistance vs. Junction Temperature VGS = 10 V ID = 1.5 A 12 1.5 8 1.0 4 0.5 0 0 1 2 3 4 5 6 Qg − Total Gate Charge (nC) 0.0 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 On-Resistance vs. Gate-to-Source Voltage 1 TJ = 150_C 0.1 TJ = 25_C 0.01 0.0 r DS(on) − On-Resistance ( W ) ID = 1.5 A I S − Source Current (A) 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 71796 S-41259—Rev. C, 05-Jul-04 www.vishay.com 3 Si2328DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.3 V GS(th) Variance (V) ID = 250 mA Power (W) 0.0 −0.3 −0.6 −0.9 −1.2 −50 8 6 4 2 TA = 25_C 12 10 Single Pulse Power 0 −25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ − Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 176_C/W t1 t2 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71796 S-41259—Rev. C, 05-Jul-04 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. 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