SI2328A

UMW R UMW SI2328A SOT-23 Plastic -Encapsulate MOSFETS ■ Features SOT–23 ● VDS (V) = 100V ● ID = 1.5 A (VGS = 10V) ● RDS(ON) ＜ 245 mΩ (VGS = 10 V) ● RDS(ON) ＜ 265 mΩ (VGS = 4.5V) 1. GATE 2. SOURCE 3. DRAIN Equivalent Circuit D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 5 sec Steady State Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current Ta=25℃ *1 ID Ta=70℃ *2 Avalanche Current *2 L=0.1mH Single Avalanche Energy Power Dissipation *1 1.15 1.2 0.92 6 IAS 6 1.8 ate EAS Ta=25℃ PD Ta=70℃ Thermal Resistance.Junction- to-Ambient *1 t≤5 sec Steady State t Thermal Resistance.Junction-to-Foot Junction Temperature Storage Temperature Range RthJA V 1.5 IDM Unit A mJ 1.25 0.73 0.8 0.47 W 100 170 ℃/W RthJF 55 TJ 150 Tstg -55 to 150 ℃ *1 Surface Mounted on 1” x 1” FR4 Board. *2 Pulse width limited by maximum junction temperature www.umw-ic.com 1 友台半导体有限公司 UMW R UMW SI2328A SOT-23 Plastic -Encapsulate MOSFETS ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS Gate Threshold Voltage On-State Drain Current *1 Static Drain-Source On-Resistance *1 VGS(th) ID(on) RDS(On) Forward Transconductance *1 gFS Gate Resistance Rg Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd Turn-On DelayTime td(on) Turn-On Rise Time tr Turn-Off DelayTime td(off) Turn-Off Fall Time tf Body Diode Reverse Recovery Time trr Maximum Body-Diode Continuous Current IS Diode Forward Voltage VSD Test Conditions ID=1mA, VGS=0V Min Typ Max 100 Unit V VDS=100V, VGS=0V 1 VDS=100V, VGS=0V, Ta=70℃ 75 VDS=0V, VGS=±20V μA ±100 nA 4 V ID=1.5A 245 mΩ VGS= 4.5 V , ID= 1 A 265 mΩ 2.4 Ω VDS=VGS , ID=250μA 2 VDS ≥ 15 V, VGS = 10 V 6 VGS=10 V, VDS=15V, ID=1.5A A 4 0.5 3.3 VGS=10V, VDS=50V, ID=1.5A S 4 nC 0.47 1.45 ID=0.2A, VDS=50V, ,VGEN=10V RL=33Ω,RG=6Ω IF= 1.5A, dI/dt= 100A/μs IS=1.0A,VGS=0V 7 11 11 17 9 15 10 15 50 100 0.8 ns 1.0 A 1.2 V *1 Pulse test: PW ≤ 300us duty cycle≤ 2%. www.umw-ic.com 2 友台半导体有限公司 UMW R UMW SI2328A SOT-23 Plastic -Encapsulate MOSFETS ■ Typical Characterisitics Output Characteristics Transfer Characteristics 12 12 7 V V GS = 10, 9, 8 V 9 I D − Drain Current (A) I D − Drain Current (A) 9 6 V 6 5 V 3 6 T C = 125 C 3 25 C 3, 2, 1 V −55 C 4 V 0 0 0 2 4 6 8 10 0 8 Capacitance 250 0.5 C − Capacitance (pF) ) 6 On-Resistance vs. Drain Current 0.4 V GS = 10 V 0.3 0.2 200 C iss 150 100 50 0.1 0.0 C oss C rss 0 0 3 6 9 12 0 20 ID − Drain Current (A) 40 60 80 100 VDS − Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature Gate Charge 20 2.5 V DS = 50 V I D = 1.5 A rDS(on) − On-Resiistance (Ω) (Normalized) V GS − Gate-to-Source Voltage (V) 4 VGS − Gate-to-Source Voltage (V) 0.6 r DS(on) − On-Resistance ( 2 VDS − Drain-to-Source Voltage (V) 16 12 8 4 V GS = 10 V I D = 1.5 A 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 0.0 −50 6 Qg − Total Gate Charge (nC) www.umw-ic.com −25 0 25 50 75 100 125 150 TJ − Junction Temperature ( C) 3 友台半导体有限公司 R UMW UMW SI2328A SOT-23 Plastic -Encapsulate MOSFETS ■ Typical Characterisitics Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.6 r DS(on) − On-Resistance ( I S − Source Current (A) ) 10 T J = 150 C 1 0.1 T J = 25 C 0.5 I D = 1.5 A 0.4 0.3 0.2 0.1 0.0 0.01 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD − Source-to-Drain Voltage (V) 4 8 10 VGS − Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.6 12 0.3 10 I D = 250 A 0.0 Power (W) V GS(th) Variance (V) 6 −0.3 8 −0.6 4 −0.9 2 . −1.2 −50 −25 0 25 50 75 100 125 T A = 25 C 6 0 150 0.01 0.1 1 TJ − Temperature ( C) 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 P DM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 176 C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 −4 www.umw-ic.com 10 −3 10 −2 10 −1 1 Square Wave Pulse Duration (sec) 4 10 100 600 友台半导体有限公司 UMW R UMW SI2328A SOT-23 Plastic -Encapsulate MOSFETS Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° Marking A28 U Ordering information Order code Package Baseqty Deliverymode UMW SI2328A SOT-23 3000 Tape and reel www.umw-ic.com 5 友台半导体有限公司