SI2328DS

SI2328DS www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.240 at VGS = 10 V 2.0 0.250 at VGS = 6 V 1.8 0.260 at VGS = 4.5 V 1.7 VDS (V) 100 Qg (Typ.) 2.9 nC • • • • TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested Material categorization: APPLICATIONS • DC/DC Converters • Load Switch • LED Backlighting in LCD TVs G 1 3 S D 2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Limit 100 ± 20 2 1.8 1.6b, c 1.3b, c 7 2.1 1.0b, c 5 1.25 2.5 1.6 1.25b, c 0.8b, c - 55 to 150 Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Operating Junction and Storage Temperature Range Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter 5 s Maximum Junction-to-Ambientb, d Steady State Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166 °C/W. E-mail：China@VBsemi TEL:86-755-83251052 Symbol RthJA RthJF Typical 75 40 Maximum 100 50 Unit °C/W SI2328DS www.VBsemi.tw MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = 250 µA 100 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs 105 ID = 250 µA Gate-Source Leakage V mV/°C - 5.2 1.2 2.8 V ± 100 nA VDS = 100 V, VGS = 0 V -1 VDS = 100 V, VGS = 0 V, TJ = 55 °C - 10 VDS 5 V, VGS = 4.5 V 5 µA A VGS = 10 V, ID = 1.5 A 0.240 VGS = 6 V, ID = 1 A 0.250 VGS = 4.5 V, ID = 0.5 A 0.260 VDS = 20 V, ID = 1.5 A 2.0  S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 190 VDS = 50 V, VGS = 0 V, f = 1 MHz 22 VDS = 50 V, VGS = 10 V, ID = 1.6 A 5.2 10.4 2.9 5.8 13 VDS = 50 V, VGS = 4.5 V, ID = 1.6 A td(off) 0.75 VDD = 50 V, RL = 39  ID = 1.3 A, VGEN = 4.5 V, Rg = 1  0.3 1.4 2.8 30 45 26 39 17 26 tf 12 20 td(on) 6 12 10 20 tr td(off) nC 1.4 f = 1 MHz td(on) tr pF VDD = 50 V, RL = 39  ID = 1.3 A, VGEN = 10 V, Rg = 1  tf 10 20 6 12  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD TC = 25 °C - 2.1 - 20 IS = 1.3 A - 0.8 - 1.2 A V Body Diode Reverse Recovery Time trr 22 33 ns Body Diode Reverse Recovery Charge Qrr 21 32 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 1.3 A, dI/dt = 100 A/µs, TJ = 25 °C 16 6 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. E-mail：China@VBsemi TEL:86-755-83251052 SI2328DS www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 5 3 VGS = 10 V thru 5 V VGS = 4.5V 2.4 ID - Drain Current (A) ID - Drain Current (A) 4 3 2 VGS = 3 V 1 1.8 TC = 25 °C 1.2 0.6 TC = 125 °C TC = - 55 °C 0 0 0 0.5 1 1.5 2 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 300 240 VGS = 4.5 V 0.300 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.350 VGS = 6 V 0.250 0.200 VGS = 10 V Ciss 180 120 60 0.150 Coss Crss 0 0 1 2 3 4 5 0 20 40 ID - Drain Current (A) 80 100 Capacitance On-Resistance vs. Drain Current and Gate Voltage 10 2.2 ID = 1.6 A ID = 1.5 A 8 VDS = 25 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 60 VDS - Drain-to-Source Voltage (V) 6 VDS = 50 V 4 VDS = 80 V 1.75 VGS = 6 V 1.3 0.85 2 VGS = 10 V 0 0.4 0 1.5 3 4.5 Qg - Total Gate Charge (nC) Gate Charge E-mail：China@VBsemi TEL:86-755-83251052 6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature SI2328DS www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 0.4 0.3 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 1.5 A TJ = 150 °C 1 TJ = 125 °C 0.2 T = 25 °C 0.15 TJ = 25 °C 0.1 0.0 0 0.3 0.6 0.9 2 1.2 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.8 10 8 Power (W) 2.5 VGS(th) (V) 4 ID = 250 μA 2.2 6 4 1.9 2 1.6 - 50 - 25 0 25 50 75 100 125 TA = 25 °C 0 0.01 150 0.1 1 Single Pulse Power Threshold Voltage 10 Limited by R DS(on)* 100 μs ID - Drain Current (A) 1 1 ms 10 ms 0.1 100 ms 1 s, 10 s 0.01 DC TA = 25 °C Single Pulse 0.001 0.1 1 BVDSS Limited 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area E-mail：China@VBsemi TEL:86-755-83251052 10 Time (s) TJ - Temperature (°C) 100 1000 SI2328DS www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.8 ID - Drain Current (A) 2.1 1.4 0.7 0.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 3 1.0 2.4 0.8 1.8 0.6 Power (W) Power (W) Current Derating* 1.2 0.6 0.4 0.2 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. E-mail：China@VBsemi TEL:86-755-83251052 SI2328DS www.VBsemi.tw A= 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 166 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C ) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. E-mail：China@VBsemi TEL:86-755-83251052 SI2328DS www.VBsemi.tw SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 E-mail：China@VBsemi TEL:86-755-83251052 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° SI2328DS www.VBsemi.tw 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index E-mail：China@VBsemi TEL:86-755-83251052 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 SI2328DS www.VBsemi.tw Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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