SI4947ADY

Si4947ADY Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) 0.080 @ VGS = - 10 V 0.135 @ VGS = - 4.5 V ID (A) - 3.9 - 3.0 S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View D1 Ordering Information: Si4947ADY Si4947ADY-T1 (with Tape and Reel) P-Channel MOSFET D2 P-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State - 30 "20 Unit V - 3.9 - 3.1 - 20 - 1.7 2.0 1.3 - 55 to 150 - 3.0 - 2.4 A - 1.0 1.2 0.76 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71101 S-31989—Rev. C, 13-Oct-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 54 87 34 Maximum 62.5 105 45 Unit _C/W 1 Si4947ADY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "20 V VDS = - 30 V, VGS = 0 V VDS = - 30 V, VGS = 0 V, TJ = 70_C VDS = - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 3.9 A VGS = - 4.5 V, ID = - 3.0 A VDS = - 15 V, ID = - 2.5 A IS = - 1.7 A, VGS = 0 V - 15 0.062 0.105 5.0 - 0.82 - 1.2 0.080 0.135 - 1.0 "100 -1 - 10 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = - 1.7 A, di/dt = 100 A/ms VDD = - 10 V, RL = 10 W V, ID ^ - 1 A, VGEN = - 10 V, RG = 6 W VDS = - 10 V, VGS = - 5 V, ID = - 3.9 A 5.8 2 1.9 8 9 21 10 27 15 18 40 20 40 ns 8 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10 thru 6 V 16 I D - Drain Current (A) I D - Drain Current (A) 5V 12 16 20 TC = - 55_C 25_C 125_C Transfer Characteristics 12 8 4V 8 4 2V 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 3V 4 0 0 1 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71101 S-31989—Rev. C, 13-Oct-03 Si4947ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.30 r DS(on) - On-Resistance ( W ) 1000 Capacitance C - Capacitance (pF) 0.24 800 Ciss 600 0.18 VGS = 4.5 V 0.12 VGS = 10 V 0.06 400 Coss 200 Crss 0.00 0 3 6 9 12 15 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 3.9 A 8 1.8 1.6 1.4 1.2 1.0 0.8 0.6 - 50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.9 A 6 4 2 0 0 2 4 6 8 10 Qg - Total Gate Charge (nC) r DS(on) - On-Resistance (W ) (Normalized) - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.40 On-Resistance vs. Gate-to-Source Voltage 10 r DS(on) - On-Resistance ( W ) TJ = 150_C I S - Source Current (A) 0.32 0.24 ID = 3.9 A 0.16 TJ = 25_C 0.08 1 0.0 0.00 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71101 S-31989—Rev. C, 13-Oct-03 www.vishay.com 3 Si4947ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 0.6 V GS(th) Variance (V) ID = 250 mA 0.4 0.2 0.0 - 0.2 - 0.4 - 50 6 Power (W) 18 30 Single Pulse Power, Junction-to-Ambient 24 12 - 25 0 25 50 75 100 125 150 0 10 -2 10 -1 1 Time (sec) 10 100 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 87_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71101 S-31989—Rev. C, 13-Oct-03