V40100K-E3-4W

New Product V40100K Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • 150 °C high performance Schottky diode • Very low forward voltage drop • Optimized VF vs. IR trade off for high efficiency 3 TMBS ® TO-220AB 2 1 PIN 1 PIN 3 PIN 2 CASE • Increased ruggedness for reverse avalanche capability • Negligible switching losses • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Marking: V40100K Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM Typical VF at IF = 20 A at TJ = 125 °C TJ max. 2 x 20 A 100 V 250 A 0.63 V 150 °C TYPICAL APPLICATIONS For use in high frequency converters, high efficiency SMPS, output rectification, freewheeling, reverse battery protection, dc-to-dc system and increased power density systems. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode SYMBOL VRRM IF(AV) IFSM EAS IRRM dV/dt TJ, TSTG V40100K 100 40 20 250 67.5 1.0 10 000 - 40 to + 150 UNIT V A A mJ A V/µs °C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Non-repetitive avalanche energy at TJ = 25 °C, IAS = 1.5 A, L = 60 mH per diode Peak repetitive reverse current at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C per diode Voltage rate of change (rated VR) Operating junction and storage temperature range Document Number: 89121 Revision: 25-Jun-09 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product V40100K Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IR = 1.0 mA Breakdown voltage (2) SYMBOL TYP. 100 (minimum) 105 (minimum) 0.51 0.59 0.72 0.44 0.53 0.63 9 10 21 MAX. - UNIT TA = 25 °C IR = 10 mA IF = 5 A IF = 1 0 A IF = 2 0 A IF = 5 A IF = 1 0 A IF = 2 0 A V R = 70 V TA = 25 °C VBR V 0.82 0.67 1000 45 Instantaneous forward voltage per diode (1) VF TA = 125 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C V Reverse current at rated VR per diode (2) VR = 100 V Notes (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms IR µA mA µA mA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum junction to case per diode per device SYMBOL RθJC RθCS V40100K 4 2 0.5 UNIT °C/W Typical thermal resistance case to heatsink ORDERING INFORMATION (Example) PACKAGE TO-220AB PREFERRED P/N V40100K-E3/4W UNIT WEIGHT (g) 1.85 PACKAGE CODE 4W BASE QUANTITY 50/tube DELIVERY MODE Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 50 18 16 D = 0.8 Average Forward Current (A) Average Power Loss (W) 40 14 12 10 8 6 4 2 D = 0.3 D = 0.2 D = 0.1 D = 0.5 30 D = 1.0 20 T 10 D = tp/T 0 5 10 15 20 tp 25 0 0 25 50 75 100 125 150 175 0 Case Temperature (°C) Average Forward Current (A) Figure 1. Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 89121 Revision: 25-Jun-09 New Product V40100K Vishay General Semiconductor 100 10 000 TA = 150 °C Instantaneous Forward Current (A) 10 TA = 125 °C TA = 100 °C Junction Capacitance (pF) 1000 1 TA = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1 100 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode 100 10 TA = 150 °C Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) Junction to Case 10 TA = 125 °C 1 TA = 100 °C 1 0.1 TA = 25 °C 0.01 0.001 10 20 30 40 50 60 70 80 90 100 0.1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 3 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 1 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) PIN 2 Document Number: 89121 Revision: 25-Jun-09 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1