SFP50N06

SFP50N06 Silicon N-Channel MOSFET Features ■ RDS(on)(Max 22mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 31nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s trench layout-based process.This technology improves the performances compared with standard parts from various sources. All of these power MOSFETs are designed for applications in switching regulators, switching convertors, motor and relay drivers, and drivers for high power bipolar switching transistors demanding high speed and low gate drive power. G D S TO220 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ, Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Channel Temperature (for 10 seconds) (Note 2) (Note 2) (Note 3) (Note1) Parameter Value 60 50 38 200 ±25 480 13 5.8 130 1.3 -55~150 300 Units V A A A V mJ mJ V/ns W W/℃ ℃ ℃ Thermal Characteristics Symbol RQJC RQcs RQJA Parameter Thermal Resistance, Junction-to-Case Case-to-Sink, Flat, Greased Surface Thermal Resistance, Junction-to-Ambient Min - Value Typ 0.5 Max 0.96 Units ℃/W ℃/W - - 62.5 ℃/W Rev, c Nov.2008 Copyright@W insemi Microelectronics Co., Ltd., All right reserved. SFP50N06 Electrical Characteristics (Tc = 25°C) Characteristics Gate leakage current Gate−source breakdown voltage Symbol IGSS V(BR)GSS Test Condition VGS = ±20 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 60 V, VGS = 0 V Min ±20 60 2 - Type 20 22 1180 64 440 15 105 60 65 31 Max ±100 1 250 4 22 1540 91 580 40 220 Unit nA V μA μA V V mΩ s Drain cut−off current IDSS VDS = 60 V, Tc = 125°C Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate charge (gate−source plus gate−drain) Gate−source charge Gate−drain (“miller”) Charge V(BR)DSS VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton tf toff Qg Qgs Qgd ID = 250 μA, VGS = 0 V VDS = 10 V, ID =250 μA VGS = 10 V, ID = 25A VDS=25V, ID = 25A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD=30V ID =25A RG =25 Ω VGS = 10V (Note4,5) VDD =48 V, VGS = 10 V, ID =50 A (Note4,5) pF ns 130 140 41 - - 8 13 nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR =35A, VGS = 0 V IDR =35A, VGS = 0 V, dIDR / dt = 100 A / μs Min Type 52 75 Max 59 200 1.5 Unit A A V ns μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=0.5mH,IAS=25A,VDD=25V,VGS=10V,Starting TJ=25℃ 3.ISD≤25A,di/dt≤380A/us, VDD