AC60N03D

AC60N03D 30V /60A Power MOSFET D N03D 60N03D N General Description 30V /60A Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant V DS 30 V RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID 6.0 mΩ 9.5 mΩ 60 A Part ID Package Type Marking Tape and reel infomation AC60N03D DFN5x6 60N03 3000 Parameter 100% UIS Tested 100% Rg Tested Symbol Maximum Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 ±V 60.0 TA=25°C Continuous Drain Current A ID 39* TA=70°C Pulsed Drain Current B IDM 96.0 Avalanche Current G IAR 19.2 Repetitive avalanche energy L=0.1mH G EAR 44.2 mJ 31 TA=25°C Power Dissipation A PD W 13* TA=70°C Junction and Storage Temperature Range A -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Symbol t ≤ 10s RJA Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead C Steady State www.asiachip.cn 第 1 页，共 5 页 RJL Typ Max Units 21 32 °C/W 43 51 °C/W 12 20 °C/W Rev0：Oct 2018 AC60N03D 30V /60A Power MOSFET STATIC PARAMETERS Parameter Conditions BVDSS Drain-Source Breakdown Voltage ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V Symbol Min Typ Max Units 30 V 1 uA 5 IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250A RDS(ON) Static Drain-Source OnResistance gFS VSD ±100 nA 1.7 2.2 V VGS=10V, ID=20A 6.0 8.6 VGS=4.5V, ID=20A 9.5 12.3 Forward Transconductance VDS=5V, ID=20A 75 Diode Forward Voltage IS=1A,VGS=190V 0.72 1.1 mΩ 1 V 60 A Typ Max Units 820 1000 pF 340 418 pF 40 47 pF 1.2 Ω Max Units Maximum Body-Diode Continuous Current IS S DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Conditions Min Typ 6.1 3.05 VGS=10V, VDS=15V, ID=20A nC Qgs Gate Source Charge 1.68 Qgd Gate Drain Charge 2.4 tD(on) Turn-On DelayTime 5.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-8A, dI/dt=500A/s 11 ns Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/s 19 nC www.asiachip.cn VGS=10V, VDS=15V,RL=0.75Ω, RGEN=3Ω 4.4 15.4 ns 4.95 第 2 页，共 5 页 Rev0：Oct 2018 AC60N03D 30V /60A Power MOSFET www.asiachip.cn 第 3 页，共 5 页 Rev0：Oct 2018 AC60N03D 30V /60A Power MOSFET www.asiachip.cn 第 4 页，共 5 页 Rev0：Oct 2018 AC60N03D 30V /60A Power MOSFET www.asiachip.cn 第 5 页，共 5 页 Rev0：Oct 2018