AO3401

Plastic-Encapsulate Mosfets AO3401 P-Channel MOSFET FEATURES High dense cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability D 1.Gate 2.Source G SOT-23 3.Drain S MARKING:A19T Maximum ratings ( Ta=25℃ unless otherwise noted) Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID -4.2 A Power Dissipation PD 350 mW Parameter RθJA 357 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ Thermal Resistance from Junction to Ambient (t