AO3401

AO3401 SOT-23 Plastic-Encapsulate MOSFETS 30V P-Channel MOSFET V(BR)DSS -30V SOT-23 RDS(on)Typ ID Max 44mΩ@-10V -4.2A 51mΩ@4.5V 3 1. GATE 2. SOURCE 1 3. DRAIN FEATURE High dense cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability MARKING 2 APPLICATION z Load/Power Switching z Interfacing Switching Equivalent circuit D A19T G S PACKAGE SPECIFICATIONS Package Reel Size SOT-23 Reel DIA. (mm) Q'TY/Reel (pcs) Box Size (mm) QTY/Box (pcs) 330 3000 203×203×195 45000 7' Carton Size Q'TY/Carton (mm) (pcs) 438×438×220 180000 Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±12 TA = 25 oC T = 70oC Continuous Drain Current Maximum Power Dissipation TA = 25 C T = 70oC 2) Junction-to-Ambient Thermal Resistance (PCB mounted) 1.2 PD W 0.9 -50 to 150 TJ, Tstg 2) A -16 A Operating Junction and Storage Temperature Range A -3.2 IDM o V -4.2 ID A Pulsed Drain Current 1) Unit 80 RthJA o C o C/W Notes 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board, t v 5 sec. The above data are for reference only. DN:T19C09A0 http://www.microdiode.com Rev:2019A0 Page :1 AO3401 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Units Off Characteristics -30 V(BR) DSS VGS = 0V, ID =-250uA Zero gate voltage drain current IDSS VDS =-30V,VGS = 0V -1 uA Gate-source leakage current IGSS VGS =±12V, VDS = 0V ±100 nA Drain-source breakdown voltage V On characteristics Drain-source on-resistance RDS(on) (note 3) Forward tranconductance (note 3) Gate threshold voltage gFS VGS(th) VGS =-10V, ID =-4.2A 44 55 mΩ VGS =-4.5V, ID =-3A 50 60 mΩ VGS =-3.3V,ID=-3A 58 75 mΩ VDS =-5V, ID =-5A VDS =VGS, ID =-250uA 7 -0.5 S -0.8 -1.2 V Dynamic Characteristics (note 4) 655 pF 65 pF Crss 53 pF td(on) 7 ns Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance VDS =-15V,VGS =0V,f =1MHz Switching Characteristics (note 4) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr VGS=-10V,VDS=-15V, 3.8 ns td(off) RL=3.3Ω,RGEN=6Ω 35 ns 10.5 ns tf Drain-source diode characteristics and maximum ratings Diode forward voltage (note 3) VSD -1 IS=1A,VGS=0V V Note : 3). Pulse test: pulse width ≤ 300us, duty cycle≤ 2% 4). Guaranteed by design, not subject to production testing http://www.microdiode.com Rev:2019A0 Page :2 AO3401 -ID, Drain-Source Current (A) -VGS(TH), Gate -Source Voltage (V) Typical Characteristics -VDS, Drain -Source Voltage (V) Tj - Junction Temperature (°C) Fig2. Normalized Threshold Voltage Vs. Temperature Rdson, On -Resistance (mΩ)) -ID, Drain-Source Current (A) Fig1. Typical Output Characteristics -VGS, Gate -Source Voltage (V) -ID , Drain Current (A) Fig4. On-Resistance vs. Drain Current and Gate -ID - Drain Current (A) -ISD, Reverse Drain Current (A) Fig3. Typical Transfer Characteristics -VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage http://www.microdiode.com -VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area Rev:2019A0 Page :3 AO3401 C, Capacitance (pF) -VGS, Gate-Source Voltage (V) Typical Characteristics -VDS, Drain-Source Voltage (V) Fig8. Typical Gate Charge Vs. Gate-Source Voltage Thermal Resistance ZqJA Normalized Transient Fig7. Typical Capacitance Vs. Drain-Source Voltage Qg, Total Gate Charge (nC) Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Switching Time Test Circuit and waveforms http://www.microdiode.com Rev:2019A0 Page :4 AO3401 Outlitne Drawing SOT-23 Package Outline Dimensions e Suggested Pad Layout 0.037 0.95 0.037 0.95 L L1 E E1 Symbol A A1 b c D E E1 e L L1 θ Dimensions In Millimeters Min Typ Max 1.00 1.40 0.10 0.35 0.50 0.10 0.20 2.70 2.90 3.10 1.40 1.60 2.4 2.80 1.90 0.10 0.30 0.4 0° 10° Note: 1. Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Important Notice and Disclaimer Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Jiangsu) assume any liability for application assistance or customer product design. Microdiode Electronics (Jiangsu) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Jiangsu). Microdiode Electronics (Jiangsu) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Jiangsu). http://www.microdiode.com Rev:2019A0 Page :5