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AO3401

AO3401

  • 厂商:

    KUU(永裕泰)

  • 封装:

    SOT-23

  • 描述:

    P-通道20-V(D-S)MOSFET SOT23-3 ID=-4.1A PD=0.4W

  • 数据手册
  • 价格&库存
AO3401 数据手册
AO3401 P-Channel 30-V(D-S) MOSFET V(BR)DSS -30 V RDS(on)MAX 60mΩ@-10V 70mΩ@-4.5V 100mΩ@-2.5V ID - 4.1A FEATURE APPLICATION ※ TrenchFET Power MOSFET ※ Load Switch for Portable Devices ※ Exceptional on-resistance and maximum DC current capability ※ DC/DC Converter ※ High dense cell design for extremely low RDS(ON) MARKING Equivalent Circuit 1.GATE 2.SOURCE 3.DRAIN Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±12 ID -4.1 IDM -27 Continuous Source-Drain Current(Diode Conduction) IS -2 Power Dissipation PD 1.4 W RθJA 125 ℃/W TJ 150 ℃ TSTG -55~+150 ℃ Continuous Drain Current Pulsed Diode Curren Thermal Resistance from Junction to Ambient (t≤5s) Operating Junction Storage Temperature www.cj-elec.com 1/4 Unit V A AO3401 MOSFET ELECTRICAL CHARACTERISTICS Static Electrical Characteristics (Ta = 25 ℃ Unless Otherwise Noted) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0V, ID = -250µA -30 VGS(th) VDS =VGS, ID = -250µA -0.6 Gate-source leakage IGSS Zero gate voltage drain current IDSS Typ Max Unit Static Drain-source breakdown voltage Gate-source threshold voltage Drain-source on-state resistancea RDS(on) V -1.2 V VDS =0V, VGS = ±12V ±100 nA VDS = -30V, VGS =0V 1 µA VGS = -10V, ID = -2.8A 50 60 mΩ VGS = -4.5V, ID = -2.8A 55 70 mΩ VGS = -2.5V, ID = -2A 71 100 mΩ Forward transconductancea gfs VDS = -4.5V, ID = -4.1A Diode forward voltage VSD IS=1A,VGS=0V 7 S -0.7 -1.3 V Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitanceb Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance VDS = -15V,VGS =0V, f=1MHz VDS = -15V,VGS = -10V, ID =-4.1A Rg f=1MHz 645 pF 80 pF 55 pF 14 nC 1.5 nC 2.5 nC 8 Ω 6.3 ns 3.2 ns 41 ns 9 ns Switchingb Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) VDD= -15V RL=4Ω, ID ≈ -1A, VGEN=- 10V,Rg=3Ω tf Drain-source body diode characteristics Continuous Source-Drain Diode Current Pulsed Diode forward Curren IS Tc=25 ℃ ISM Note : 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t < 5 sec. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.cj-elec.com 2/4 -1.3 A -20 A AO3401 Typical Characteristics: www.cj-elec.com 3/4 AO3401 www.cj-elec.com 4/4
AO3401 价格&库存

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AO3401
    •  国内价格
    • 1+0.30430

    库存:0

    AO3401
      •  国内价格
      • 20+0.18732
      • 200+0.16538
      • 600+0.15320
      • 3000+0.12214
      • 9000+0.11580
      • 21000+0.11239

      库存:0

      AO3401
      •  国内价格
      • 20+0.14754
      • 200+0.13802
      • 500+0.12850
      • 1000+0.11898
      • 3000+0.11422
      • 6000+0.10756

      库存:2560