WSD4038DN

WSD4038DN N-Ch MOSFET General Description Product Summery The WSD4038DN is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 40V 13mΩ 38A Applications The WSD4038DN meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features DFN3.3X3.3-EP Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ±20 V 1 38 A 1 20 A 1 15 A 1 10 A 36 A 26 mJ Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V ID@TA=70℃ Continuous Drain Current, VGS @ 10V IDM@TC=25℃ Pulsed Drain Current EAS IAS PD@TA=25℃ 2 Avalanche Energy ,Single Pulse (L=0.1mH)3 Avalanche Current ,Single pulse(L=0.1mH)3 36 A 4 2.1 W 4 Total Power Dissipation PD@TA=70℃ Total Power Dissipation 1.78 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Typ. Max. Unit --- 60 ℃/W --- 2.1 ℃/W Dec.2014 WSD4038DN N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS RDS(ON) RDS(ON) VGS(th) Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=250uA 2 Static Drain-Source On-Resistance 2 Static Drain-Source On-Resistance Gate Threshold Voltage VGS=10V , ID=7A VGS=4.5V , ID=5A Min. 40 ----- Typ. --- Max. Unit --- V 10.5 13 mΩ 12 16 mΩ 1.8 2.5 V --- -6. --- mV/℃ VDS=32V , VGS=0V , TJ=25℃ ----- - 2 VDS=32V , VGS=0V , TJ=55℃ --- - 10 VGS=±20V , VDS=0V ----- - ±100 nA VDS=5V , ID=20A --- 31 --- S VDS=0V , VGS=0V , f=1MHz --- 1.1 1.8 Ω --- 20 28 --- 3.9 7.5 --- 3.0 5.1 --- 12.6 16 --- 10 12 --- 23.6 32 Fall Time --- 6 9 Ciss Input Capacitance --- 1125 --- Coss Output Capacitance --- 132 --- Crss Reverse Transfer Capacitance --- 70 --- Min. Typ. Max. Unit -- --- 5 A --- - 15 A ----- - 1.1 V △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current gf gfs orward Transconductance Rg Gate Resistance Qg Total Gate Charge (10V) Qgs Qgd Td(on) Tr Td(off) Tf VGS=VDS , ID =250uA VDS=20V, VGS=10V, IDS=7A Gate-Source Charge Gate-Drain Charge Turn-On Delay Time VDD=20V, RL=20 3, IDS=1A, VGEN=10V, RG=1Ω. Rise Time Turn-Off Delay Time VDS=20V , VGS=0V , f=1MHz 1.5 uA nC ns pF Diode Characteristics Symbol IS Parameter Conditions 1,6 Continuous Source Current 2,6 ISM Pulsed Source Current VSD Diode Forward Voltage2 VG=VD=0V , Force Current VGS=0V , IS=20A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t