WSF09N20
N-Ch MOSFET
General Description
Product Summery
The WSF09N20 is the highest performance trench
N-Ch MOSFET with extreme high cell density,which
provide excellent RDSON and gate charge for most
of the synchronous buck converter applications .
BVDSS
RDSON
ID
200V
0.21Ω
9A
Applications
The WSF09N20 meet the RoHS and Green
Product requirement , 100% EAS guaranteed with
full function reliability approved.
z High Frequency Point-of-Load Synchronous
Buck Converter
z Networking DC-DC Power System
Features
z Load Switch
z Advanced high cell density Trench technology
TO-252 Pin Configuration
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
ID@TA=25℃
ID@TA=70℃
IDM
EAS
Rating
Units
Drain-Source Voltage
200
V
Gate-Source Voltage
±30
V
1
9
A
1
3.13
A
1
9
A
1
5.8
A
36
A
Single Pulse Avalanche Energy
320
mJ
A
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
2
3
IAS
Avalanche Current
9
PD@TC=25℃
Total Power Dissipation3
83
W
PD@Tc=100℃
Total Power Dissipation3
47
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Typ.
RθJA
Thermal Resistance Junction-ambient
RθJC
1
www.winsok.tw
Thermal Resistance Junction-Case
Page 1
1
Max.
Unit
---
30
℃/W
---
1.6
℃/W
Dec.2014
WSF09N20
N-Ch MOSFET
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
200
---
---
V
---
0.25
---
VGS=10V , ID=4.5A
---
0.21
0.25
V/℃
Ω
VGS=6.0V , ID=3.6A
---
0.26
0.29
Ω
1.0
1.8
2.5
V
---
-4.63
---
mV/℃
VDS=200V , VGS=0V , TJ=25℃
---
---
1
VDS=160V , VGS=0V , TJ=125℃
---
---
10
VGS=0V , ID=250uA
Reference to 25℃ , ID=1mA
VGS=VDS , ID =250uA
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±30V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=30V , ID=4.5A
---
0.21
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
2
4
Ω
---
11.8
---
---
2.36
---
Qg
Total Gate Charge (10V)
Qgs
Gate-Source Charge
Qgd
Td(on)
VDS=160V , VGS=10V , ID=9A
Gate-Drain Charge
---
3.98
---
Turn-On Delay Time
---
10.33
---
uA
nC
Rise Time
VDD=100V , VGS=10V ,
---
10.7
---
Turn-Off Delay Time
RG=10Ω ID=9A RL=10Ω
---
29.1
---
Fall Time
---
11.1
---
Ciss
Input Capacitance
---
509
---
Coss
Output Capacitance
---
51.2
---
Crss
Reverse Transfer Capacitance
---
3.2
---
Min.
Typ.
Max.
Unit
---
mJ
Tr
Td(off)
Tf
VDS=25V , VGS=0V , f=1MHz
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Conditions
5
Single Pulse Avalanche Energy
VDD=25V , L=0.1mH , IAS=5A
---
320
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
2,6
Pulsed Source Current
2
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Conditions
1,6
Reverse Recovery Charge
VG=VD=0V , Force Current
VGS=0V , IS=5A , TJ=25℃
IF=5A , dI/dt=100A/µs , TJ=25℃
Min.
Typ.
Max.
Unit
---
---
9
A
---
---
36
A
---
---
1.4
V
---
201
---
nS
---
663
---
nC
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t
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